Abstract: A method and system for error management in a memory device. In one embodiment of the invention, the memory device can handle commands and address parity errors and cyclic redundancy check errors. In one embodiment of the invention, the memory can detect whether a received command has any parity errors by determining whether the command bits or the address bits of the received command has any parity errors. If a parity error or cyclic redundancy check error in the received command is detected, an error handling mechanism is triggered to recover from the errant command.

Abstract: In one embodiment, the present invention includes a cache memory including cache lines that each have a tag field including a state portion to store a cache coherency state of data stored in the line and a weight portion to store a weight corresponding to a relative importance of the data. In various implementations, the weight can be based on the cache coherency state and a recency of usage of the data. Other embodiments are described and claimed.

Abstract: A method and system for error management in a memory device. In one embodiment of the invention, the memory device can handle commands and address parity errors and cyclic redundancy check errors. In one embodiment of the invention, the memory can detect whether a received command has any parity errors by determining whether the command bits or the address bits of the received command has any parity errors. If a parity error or cyclic redundancy check error in the received command is detected, an error handling mechanism is triggered to recover from the errant command.

Abstract: Described herein are 8-bit wide data error detection and correction mechanisms that require fewer memory chips and therefore provide reduces system complexity and reduced system power consumption as compared to traditional mechanisms. This technique relies on testing a fixed set of possible solutions in order to correct the fault. This error code provides a very high error detection rate, but requires a set of error trials to correct the detected faults. The extra correction latency for infrequent errors may be acceptable given a low frequency. For repeated corrections, a log may be maintained to simplify error correction.

Abstract: Memory apparatus and methods utilizing multiple bit lanes may redirect one or more signals on the bit lanes. A memory agent may include a redrive circuit having a plurality of bit lanes, a memory device or interface, and a fail-over circuit coupled between the plurality of bit lanes and the memory device or interface.

Abstract: Memory apparatus and methods utilizing multiple bit lanes may redirect one or more signals on the bit lanes. A memory agent may include a redrive circuit having a plurality of bit lanes, a memory device or interface, and a fail-over circuit coupled between the plurality of bit lanes and the memory device or interface.

Abstract: A method and system for error management in a memory device. In one embodiment of the invention, the memory device can handle commands and address parity errors and cyclic redundancy check errors. In one embodiment of the invention, the memory can detect whether a received command has any parity errors by determining whether the command bits or the address bits of the received command has any parity errors. If a parity error or cyclic redundancy check error in the received command is detected, an error handling mechanism is triggered to recover from the errant command.

Abstract: Memory apparatus and methods utilizing multiple bit lanes may redirect one or more signals on the bit lanes. A memory agent may include a redrive circuit having a plurality of bit lanes, a memory device or interface, and a fail-over circuit coupled between the plurality of bit lanes and the memory device or interface.

Abstract: Memory apparatus and methods utilizing multiple bit lanes may redirect one or more signals on the bit lanes. A memory agent may include a redrive circuit having a plurality of bit lanes, a memory device or interface, and a fail-over circuit coupled between the plurality of bit lanes and the memory device or interface.

Abstract: Memory apparatus and methods utilizing multiple bit lanes may redirect one or more signals on the bit lanes. A memory agent may include a redrive circuit having a plurality of bit lanes, a memory device or interface, and a fail-over circuit coupled between the plurality of bit lanes and the memory device or interface.

Abstract: An embodiment may include circuitry that may detect and/or correct at least one error in a data codeword that may include a data word, cyclical redundancy check (CRC) word, and parity word. The circuitry may select whether a portion of the CRC word indicates whether only a single processor has accessed the data word. The data word, CRC word, and the parity word may be accessible in respective distinct memory device sets that each may include one or more respective memory devices. If the circuitry detects, based at least in part upon the data codeword and CRC word, a CRC error, and the at least one error includes fewer than a first predetermined number of errors, the circuitry may determine in which of the one or more respective memory devices in the memory device sets the at least one error resides and may correct the at least one error.

Abstract: Embodiments of the invention are generally directed to systems, methods, and apparatuses to transfer data and data mask bits in a common frame with a shared error bit code. A memory system uses data frames to transfer data between a host and a memory device. In some cases, the system may also transfer one or more data mask bits in a data frame (rather than via a separate bit lane). The system may generate an error bit checksum (such as a cyclic redundancy code or CRC) to cover the data bits and the data mask bits. In some embodiments, the data bits, data mask bits, and checksum bits are transferred in a common frame.

Abstract: Memory apparatus and methods utilizing multiple bit lanes may redirect one or more signals on the bit lanes. A memory agent may include a redrive circuit having a plurality of bit lanes, a memory device or interface, and a fail-over circuit coupled between the plurality of bit lanes and the memory device or interface.

Abstract: Memory apparatus and methods utilizing multiple bit lanes may redirect one or more signals on the bit lanes. A memory agent may include a redrive circuit having a plurality of bit lanes, a memory device or interface, and a fail-over circuit coupled between the plurality of bit lanes and the memory device or interface.

Abstract: Described herein are 8-bit wide data error detection and correction mechanisms that require fewer memory chips and therefore provide reduces system complexity and reduced system power consumption as compared to traditional mechanisms. This technique relies on testing a fixed set of possible solutions in order to correct the fault. This error code provides a very high error detection rate, but requires a set of error trials to correct the detected faults. The extra correction latency for infrequent errors may be acceptable given a low frequency. For repeated corrections, a log may be maintained to simplify error correction.

Abstract: In one embodiment, the present invention includes a cache memory including cache lines that each have a tag field including a state portion to store a cache coherency state of data stored in the line and a weight portion to store a weight corresponding to a relative importance of the data. In various implementations, the weight can be based on the cache coherency state and a recency of usage of the data. Other embodiments are described and claimed.

Abstract: A method and system for error management in a memory device. In one embodiment of the invention, the memory device can handle commands and address parity errors and cyclic redundancy check errors. In one embodiment of the invention, the memory can detect whether a received command has any parity errors by determining whether the command bits or the address bits of the received command has any parity errors. If a parity error or cyclic redundancy check error in the received command is detected, an error handling mechanism is triggered to recover from the errant command.

Abstract: Memory apparatus and methods utilizing multiple bit lanes may redirect one or more signals on the bit lanes. A memory agent may include a redrive circuit having a plurality of bit lanes, a memory device or interface, and a fail-over circuit coupled between the plurality of bit lanes and the memory device or interface.

Abstract: An embodiment may include circuitry that may detect and/or correct at least one error in a data codeword that may include a data word, cyclical redundancy check (CRC) word, and parity word. The circuitry may select whether a portion of the CRC word indicates whether only a single processor has accessed the data word. The data word, CRC word, and the parity word may be accessible in respective distinct memory device sets that each may include one or more respective memory devices. If the circuitry detects, based at least in part upon the data codeword and CRC word, a CRC error, and the at least one error includes fewer than a first predetermined number of errors, the circuitry may determine in which of the one or more respective memory devices in the memory device sets the at least one error resides and may correct the at least one error.

Abstract: Memory apparatus and methods utilizing multiple bit lanes may redirect one or more signals on the bit lanes. A memory agent may include a redrive circuit having a plurality of bit lanes, a memory device or interface, and a fail-over circuit coupled between the plurality of bit lanes and the memory device or interface.