Abstract: Embodiments of the present invention relate to nanowire-based photovoltaic cells and to methods for fabricating the same. In one embodiment, a photovoltaic cell includes a first semiconductor layer doped with a first impurity and disposed on a portion of a first raised surface of a substrate and a second semiconductor layer doped with a second impurity and disposed on a second raised surface of the substrate. The first semiconductor layer has at least one negatively sloped surface, and the second semiconductor layer has at least one positively sloped surface neighboring the at least one negatively sloped surface of the first semiconductor layer. The photovoltaic cell includes at least one nanowire electronically coupled to the negatively sloped surface of the first semiconductor layer and electronically coupled to the positively sloped surface of the second semiconductor layer.

Abstract: A photodetector includes a first layer, a second layer and a plurality of nanowires established between the first and second layers. At least some of the plurality of nanowires have a bandgap that is different from a bandgap of at least some other of the plurality of nanowires.