Abstract: Provided is a single pulse laser apparatus. The apparatus including a resonator having a first mirror, a second mirror, a gain medium, and electro-optic modulators (EOMs) which perform each mode-locking and Q-switching, the apparatus includes a photodiode which measures laser light that oscillates from the resonator, a synchronizer which converts an electrical signal generated by measuring the laser light into a transistor-transistor logic (TTL) signal, a delay unit which sets a latency determined in order to synchronize a mode-locked pulse with a Q-switched pulse to the TTL signal, and outputs a trigger TTL signal according to the latency, and a Q-driver which inputs the trigger TTL signal to the EOM which performs Q-switching, and causes the EOM to operates.

Abstract: Disclosed herein is a single pulse laser apparatus that includes: a resonator having a first mirror, a second mirror, a gain medium, an electro-optic modulator (EOM) configured to perform single pulse switching, and an acousto-optic modulator (AOM) configured to perform mode-locking; a photodiode configured to measure a laser beam oscillated in the resonator; a synchronizer configured to convert an electrical signal, which is generated by measuring the laser beam, into a transistor-transistor logic (TTL) signal; a delay unit configured to set a delay time for the TTL signal to synchronize the EOM and the AOM and output a trigger TTL signal according to the delay time; an AOM driver configured to input the trigger TTL signal to the AOM that performs mode-locking and drive the AOM; and an EOM driver configured to input the trigger TTL signal to the EOM that performs single pulse switching and drive the EOM.

Abstract: Disclosed herein is a single pulse laser apparatus that includes: a resonator having a first mirror, a second mirror, a gain medium, an electro-optic modulator (EOM) configured to perform single pulse switching, and an acousto-optic modulator (AOM) configured to perform mode-locking; a photodiode configured to measure a laser beam oscillated in the resonator; a synchronizer configured to convert an electrical signal, which is generated by measuring the laser beam, into a transistor-transistor logic (TTL) signal; a delay unit configured to set a delay time for the TTL signal to synchronize the EOM and the AOM and output a trigger TTL signal according to the delay time; an AOM driver configured to input the trigger TTL signal to the AOM that performs mode-locking and drive the AOM; and an EOM driver configured to input the trigger TTL signal to the EOM that performs single pulse switching and drive the EOM.

Abstract: Disclosed is an apparatus for graphene wet transfer, which includes: a reservoir body having at least two reservoirs; a barrier structure located on the reservoir and having at least one separated space formed by barriers; and a substrate frame located below the barrier structure and having at least one substrate accommodation groove for accommodating a target substrate to which graphene is transferred. Here, each reservoir may be filled with a solution for a wet transfer process, and the graphene may be separately located in each separated space in a floating state in the solution.

Abstract: Provided is a single pulse laser apparatus. The apparatus including a resonator having a first mirror, a second mirror, a gain medium, and electro-optic modulators (EOMs) which perform each mode-locking and Q-switching, the apparatus includes a photodiode which measures laser light that oscillates from the resonator, a synchronizer which converts an electrical signal generated by measuring the laser light into a transistor-transistor logic (TTL) signal, a delay unit which sets a latency determined in order to synchronize a mode-locked pulse with a Q-switched pulse to the TTL signal, and outputs a trigger TTL signal according to the latency, and a Q-driver which inputs the trigger TTL signal to the EOM which performs Q-switching, and causes the EOM to operates.

Abstract: Provided is a method of analyzing binding efficiency of adhesive nanoparticles. The method includes (a) injecting a solution containing nanoparticles into a first chamber slide, (b) evaporating only the solution from the first chamber slide into which the solution containing the nanoparticles is injected, and measuring a saturation temperature using a thermal imager while radiating light from a light source, (c) injecting cells into a second chamber slide, (d) injecting a solution containing nanoparticles into the second chamber slide in which the cells are cultured, (e) removing nanoparticles which are not bound to the cells from the second chamber slide into which the cells and the nanoparticles are injected, and (f) evaporating only the solution from the second chamber slide from which the nanoparticles are removed, and measuring a saturation temperature using a thermal image while radiating light from the light source.

Abstract: Provided is an extreme ultra-violet (EUV) beam generation apparatus using multi-gas cell modules in which a gas is prevented from directly flowing into a vacuum chamber by adding an auxiliary gas cell serving as a buffer chamber to a main gas cell, a diffusion rate of the gas is decreased, a high vacuum state is maintained, and a higher power EUV beam is continuously generated.

Abstract: A plasmonic all-optical switch includes a graphene layer, a first dielectric layer located on the graphene layer, a nano-antenna located on the first dielectric layer, and a second dielectric layer located on the nano-antenna. An incident beam is propagated by means of a surface plasmon wave generated at an interface between the graphene layer and the first dielectric layer. Further, localized surface plasmon resonance is selectively generated at an interface between the nano-antenna and the second dielectric layer by means of a pump beam incident to the nano-antenna to decrease an intensity of the incident beam. The plasmonic all-optical switch may operate at an ultrahigh speed just with a small light energy without any electric method, greatly reduce power consumption of an IT device by applying to an all-optical transistor or the like, and increase a processing rate.

Abstract: A plasmonic all-optical switch includes a graphene layer, a first dielectric layer located on the graphene layer, a nano-antenna located on the first dielectric layer, and a second dielectric layer located on the nano-antenna. An incident beam is propagated by means of a surface plasmon wave generated at an interface between the graphene layer and the first dielectric layer. Further, localized surface plasmon resonance is selectively generated at an interface between the nano-antenna and the second dielectric layer by means of a pump beam incident to the nano-antenna to decrease an intensity of the incident beam. The plasmonic all-optical switch may operate at an ultrahigh speed just with a small light energy without any electric method, greatly reduce power consumption of an IT device by applying to an all-optical transistor or the like, and increase a processing rate.

Abstract: Disclosed are herein an apparatus and method for extreme ultraviolet (EUV) spectroscope calibration. The apparatus for EUV spectroscope calibration includes an EUV generating module, an Al filter, a diffraction grating, a CCD camera, a spectrum conversion module, and a control module that compares a wavelength value corresponding to a maximum peak among peaks of the spectrum depending on the order of the EUV light converted from the spectrum conversion module with a predetermined reference wavelength value depending on an order of high-order harmonics to calculate a difference value with the closest reference wavelength value, and controls the spectrum depending on the order of the EUV light converted from the spectrum conversion module to be moved in a direction of wavelength axis by the calculated difference value. Thus, it is possible to accurately measure a wavelength of a spectrum of EUV light used in EUV exposure technology and mask inspection technology.

Abstract: Disclosed are herein an apparatus and method for extreme ultraviolet (EUV) spectroscope calibration. The apparatus for EUV spectroscope calibration includes an EUV generating module, an Al filter, a diffraction grating, a CCD camera, a spectrum conversion module, and a control module that compares a wavelength value corresponding to a maximum peak among peaks of the spectrum depending on the order of the EUV light converted from the spectrum conversion module with a predetermined reference wavelength value depending on an order of high-order harmonics to calculate a difference value with the closest reference wavelength value, and controls the spectrum depending on the order of the EUV light converted from the spectrum conversion module to be moved in a direction of wavelength axis by the calculated difference value. Thus, it is possible to accurately measure a wavelength of a spectrum of EUV light used in EUV exposure technology and mask inspection technology.

Abstract: Provided are an apparatus and method for calibrating an extreme ultraviolet (EUV) spectrometer in which a wavelength of a spectrum of EUV light used for EUV lithography and mask inspection technology can be measured accurately.

Abstract: Provided is a pulse laser apparatus for generating laser light. The apparatus includes a first mirror and a second mirror which are disposed at both ends of a resonator and configured to reflect the laser light, a gain medium disposed between the first and second mirrors and configured to amplify and output light incident from an outside, an etalon configured to adjust a pulse width of the laser light, and an acousto-optic modulator disposed between the first and second mirrors and configured to form a mode-locked and Q-switched signal from the laser light, in which some of the laser light is output through either the first or second mirror to outside the resonator.

Abstract: A method for forming a PN junction in graphene includes: forming a graphene layer, and forming a DNA molecule layer on a partial region of the graphene layer, the DNA molecule layer having a nucleotide sequence structure designed to provide the graphene layer with a predetermined doping property upon adsorption on the graphene layer. The DNA molecule has a nucleotide sequence structure designed for doping of graphene so that doped graphene has a specific semiconductor property. The DNA molecule is coated on the surface of the graphene layer of which the partial region is exposed by micro patterning, and thereby, PN junctions of various structures may be formed by a region coated with the DNA molecule and a non-coated region in the graphene layer.

Abstract: Disclosed are a device for detecting a single photon available at a room temperature, which includes: a signal transmitting unit including a first electrode and a second electrode spaced apart from each other and at least one nanostructure disposed between the first electrode and the second electrode, the first electrode receiving a signal from the signal generating unit; a photonic crystal lattice structure for receiving a photon, the photonic crystal lattice structure having an optical waveguide for guiding the received photon to the first electrode, the optical waveguide being formed by a plurality of dielectric structures; and a single photon detector for detecting a photon by analyzing a signal output to the second electrode, and a method for detecting a single photon using the device.

Abstract: Provided are an apparatus and method for calibrating an extreme ultraviolet (EUV) spectrometer in which a wavelength of a spectrum of EUV light used for EUV lithography and mask inspection technology can be measured accurately.

Abstract: There are provided a fabricating method of a carbon nanotube-based field effect transistor having an improved binding force with a substrate and a carbon nanotube-based field effect transistor fabricated by the fabricating method. The method includes forming an oxide film on a substrate, forming a photoresist pattern on the oxide film, forming a metal film on the entire surface of the oxide film having the photoresist pattern, removing the photoresist by lifting off, adsorbing carbon nanotubes on the substrate from which the photoresist is removed, performing an annealing process to the substrate to which the carbon nanotubes are adsorbed, and removing the metal film. Since an adhesive strength between a substrate and carbon nanotubes increases, stability and reliability of a field effect transistor can be improved. If the field effect transistor is applied to a liquid sensor or the like, a lifespan of the sensor can be extended and reliability of a measurement result obtained by the sensor can be improved.

Abstract: Provided is a pulse laser apparatus for generating laser light. The apparatus includes a first mirror and a second mirror which are disposed at both ends of a resonator and configured to reflect the laser light, a gain medium disposed between the first and second mirrors and configured to amplify and output light incident from an outside, an etalon configured to adjust a pulse width of the laser light, and an acousto-optic modulator disposed between the first and second mirrors and configured to form a mode-locked and Q-switched signal from the laser light, in which some of the laser light is output through either the first or second mirror to outside the resonator.

Abstract: There are provided a fabricating method of a carbon nanotube-based field effect transistor having an improved binding force with a substrate and a carbon nanotube-based field effect transistor fabricated by the fabricating method. The method includes forming an oxide film on a substrate, forming a photoresist pattern on the oxide film, forming a metal film on the entire surface of the oxide film having the photoresist pattern, removing the photoresist by lifting off, adsorbing carbon nanotubes on the substrate from which the photoresist is removed, performing an annealing process to the substrate to which the carbon nanotubes are adsorbed, and removing the metal film. Since an adhesive strength between a substrate and carbon nanotubes increases, stability and reliability of a field effect transistor can be improved. If the field effect transistor is applied to a liquid sensor or the like, a lifespan of the sensor can be extended and reliability of a measurement result obtained by the sensor can be improved.

Abstract: A photoluminescence wavelength tunable material may include a composite including a graphene oxide layer and metal nanoparticles attached on the graphene oxide layer. By attaching the metal nanoparticles to the graphene oxide, the photoluminescence wavelength (i.e., the color of emitted light) of the graphene oxide may be tuned while maintaining the structure and physical properties of graphene oxide. The photoluminescence wavelength tunable material may be applied to an energy harvesting device such as a solar cell which exhibits high efficiency with less loss of light.