Abstract: An electronic device comprising a semiconductor memory including a plurality of memory cells is provided. Each of the plurality of memory cells includes: a first electrode layer; a variable resistance layer disposed over the first electrode layer; a second electrode layer disposed over the variable resistance layer; and an interface electrode layer interposed between the first electrode layer and the variable resistance layer or between the second electrode layer and the variable resistance layer. The interface electrode layer includes a porous metal-containing layer.

Abstract: A memory device and an electronic device including the same are provided. The memory device includes a first memory cell disposed at an intersection of first and second conductive lines that extend in first and second directions, respectively, a second memory cell spaced apart from the first memory cell by a first distance in the first direction, a third memory cell spaced apart from the first memory cell by a second distance in the second direction, a first insulating pattern disposed between the first memory cell and the second memory cell, and a second insulating pattern disposed between the first memory cell and the third memory cell. The second insulating pattern has a lower thermal conductivity than the first insulating pattern.

Abstract: A memory device and an electronic device including the same are provided. The memory device includes a first memory cell disposed at an intersection of first and second conductive lines that extend in first and second directions, respectively, a second memory cell spaced apart from the first memory cell by a first distance in the first direction, a third memory cell spaced apart from the first memory cell by a second distance in the second direction, a first insulating pattern disposed between the first memory cell and the second memory cell, and a second insulating pattern disposed between the first memory cell and the third memory cell. The second insulating pattern has a lower thermal conductivity than the first insulating pattern.