Abstract: A system for reducing an OFF-current in a thin film transistor of a liquid crystal display device includes gate and data lines crossing each other, a pixel thin film transistor including gate, source and drain electrodes, the gate electrode connected to the gate line and the source electrode connected to the data line, a liquid crystal capacitor connected to the drain electrode of the pixel thin film transistor, a first switch thin film transistor connected to a first end of the data line, a second switch thin film transistor connected to a first end of the gate line, a first voltage source electrically connected to the drain electrode of the pixel thin film transistor, a second voltage source connected to a source electrode of the first switch thin film transistor, a third voltage source connected to gate electrodes of the first and second switch thin film transistors, and a fourth voltage source connected to a source electrode of the second switch thin film transistor.

Abstract: A shift register having a built-in level shifter includes a buffer outputting a shift pulse using a first clock signal and a first supply voltage via voltages at first and second nodes; a first controller controlling the voltage of the first node via the start pulse and the second node; and a second controller controlling the second node voltage using the first and second supply voltage via the start pulse and the second clock signal. The level shifter includes a third controller forming a current path between third supply voltage input line and first supply voltage input line controlling a third node using the first supply voltage and a third supply voltage via the voltage of the second node and two of first to fourth clock signals; and an output part outputting the level-shifted shift pulse using the first and third supply voltage via the voltage at the third node.

Abstract: A liquid crystal display panel includes: a display part having pixels; a non-display part having driving circuits for driving the display part; a control line formed in the non-display part for applying a drive signal to signal lines of the display part; a scribed line formed in an area of the non-display part crossing the control line; and a shorting bar that runs along the scribed line and bypasses around an area in which the scribed line crosses the control line.

Abstract: A liquid crystal display and a method for fabricating the same include a first substrate having an active layer with source/drain regions formed therein, a gate line and a data line extending in directions perpendicular to each other formed thereon, a dummy gate insulating film and a dummy gate electrode both formed on the first substrate in fixed patterns isolated from the gate line, an interlayer insulating film on the first substrate inclusive of the dummy gate electrode with a step, a drain electrode formed on the interlayer insulating film to overlap on upper regions of the dummy gate electrode so as to be in contact with the drain region and have a step to the data line, the data line formed on the interlayer insulating having a step to the drain electrode, a passivation film formed on the interlayer insulating film inclusive of the dummy gate electrode and the data line, a contact hole formed to expose the drain electrode overlapped with the dummy gate electrode, and a pixel electrode overlapping upper

Abstract: Disclosed is a colloidal silica composition and a method for producing high-purity silica glass using the same. The colloidal silica composition of the present invention comprise an alkoxysilane compound, an organic solvent, deionized water, and a basic catalyst. The colloidal silica composition further includes a basic organic material for adjusting a hydrogen ion concentration (pH) to prevent the formation of agglomerates when concentrated. Silica glass having high purity and excellent sinterability can be produced using the colloidal silica composition of the present invention.

Abstract: A liquid crystal display and a method for fabricating the same include a first substrate having an active layer with source/drain regions formed therein, a gate line and a data line extending in directions perpendicular to each other formed thereon, a dummy gate insulating film and a dummy gate electrode both formed on the first substrate in fixed patterns isolated from the gate line, an interlayer insulating film on the first substrate inclusive of the dummy gate electrode with a step, a drain electrode formed on the interlayer insulating film to overlap on upper regions of the dummy gate electrode so as to be in contact with the drain region and have a step to the data line, the data line formed on the interlayer insulating having a step to the drain electrode, a passivation film formed on the interlayer insulating film inclusive of the dummy gate electrode and the data line, a contact hole formed to expose the drain electrode overlapped with the dummy gate electrode, and a pixel electrode overlapping upper

Abstract: A liquid crystal display device that is capable of preventing metal wires from being corroded during its long-term use under the high temperature and high humidity circumference. In the device, a pad is positioned at a non-display area of a substrate to be connected to at least one of a gate line and a data line. A driving circuit responds to an electrical signal from the pad to drive a liquid crystal pixel cell provided within said non-display area of the substrate. A semiconductor pattern is opposed to the driving circuit with having the pad therebetween to be connected between the pad and the driving circuit.

Abstract: The present invention relates to a process of producing a silica glass in which the sol is transported from a mixer to a former under a certain amount of pressure. The transportation path of the sol is vacuumized in order to remove macro bubbles that can be potentially produced while the sol is transported from the mixer to the former. The interior of a piping connecting between the mixer for bearing the sol and the former for forming the gel is maintained in the vacuum state so as to effectively remove the macro bubbles, which can be potentially produced during the transportation of the sol.

Abstract: A shift register employs only a thin film transistor of the same type channel and has a level shifter built-in. A shift register with a built in level shifter includes a plurality of stages and a plurality of level shifters. The stages are connected in cascade to shift a start pulse inputted through an input terminal and sequentially output the shifted pulse. The level shifters level-shift a voltage level of the shifted pulse applied from each of the stages and outputting it.

Abstract: A method of forming a thin film transistor, includes: forming an active region on a first insulating layer, the active region having a channel region, at least one sub-channel region, and first regions disposed between the channel region and each sub-channel region; sequentially forming a second insulating layer and a first conductive layer over the first insulating layer; patterning the second insulating layer and the first conductive layer to form a gate insulating layer and gate electrode on a channel region of the active layer, and to form a sub-gate insulating layer and associated sub-gate electrode on each sub-channel region of the active layer; forming a mask covering at least a portion of the gate electrode, at least a portion of each sub-gate electrode, and each first region of the active region; and implanting impurities into exposed portions of the active region using the mask to form a source region on a first side of the channel region and a drain region on a second side of the channel region suc

Abstract: The thin film transistor includes an insulating substrate, and an active region formed on the insulating substrate. The active region includes a channel region, a source region formed on a first side of the channel region, a drain region formed on a second side of the channel region, a sub-channel region formed between the channel region and at least one of the source region and the drain region, and a first region formed between the channel region and each sub-channel region. The thin film transistor also includes an insulating layer formed on the channel region and each sub-channel region, a gate electrode formed on the insulating layer over the channel region, and a sub-gate electrode formed on the insulating layer over each sub-channel region. When impurities are implanted therein, the first region forms a lightly doped region; otherwise, each first region forms an offset region.

Abstract: An array substrate for a transflective liquid crystal display device includes a substrate; a thin film transistor on the substrate, the thin film transistor including an active layer, a gate electrode, a source electrode and a drain electrode; a gate line connected to the gate electrode; a data line connected to the source electrode, the data line defining a pixel region with the gate line; an active extension portion extending from the active layer to the pixel region; a first insulating layer on the active extension portion; a storage electrode on the first insulating layer over the active extension portion; a second insulating layer on the storage electrode; a reflective plate on the second insulating layer over the storage electrode, the reflective plate extending over one end of the data line and connected to an adjacent reflective plate; a third insulating layer on the reflective plate; and a pixel electrode on the third insulating layer, the pixel electrode extending over one end of the data line and c

Abstract: A bi-directional driving circuit of a liquid crystal display (LCD) panel is disclosed, in which forward scanning and backward scanning are available. In a bi-directional driving circuit of an LCD panel having a plurality of blocks, each block includes a first start pulse input terminal to which a start pulse or an output signal of a previous block is input and a second start pulse input terminal to which the start pulse or an output signal of a next block is input. Also, each block includes a first switching portion switching a start pulse signal applied to an input terminal of a first block among the blocks and switching an output signal of a previous block, which is applied to input terminals of the other blocks and a second switching portion switching a start pulse signal applied to an input terminal of the last block and switching an output signal of a previous block, which is applied to input terminals of the other blocks.

Abstract: A method of forming a thin film transistor, includes: forming an active region on a first insulating layer, the active region having a channel region, at least one sub-channel region, and first regions disposed between the channel region and each sub-channel region; sequentially forming a second insulating layer and a first conductive layer over the first insulating layer; patterning the second insulating layer and the first conductive layer to form a gate insulating layer and gate electrode on a channel region of the active layer, and to form a sub-gate insulating layer and associated sub-gate electrode on each sub-channel region of the active layer; forming a mask covering at least a portion of the gate electrode, at least a portion of each sub-gate electrode, and each first region of the active region; and implanting impurities into exposed portions of the active region using the mask to form a source region on a first side of the channel region and a drain region on a second side of the channel region suc

Abstract: A liquid crystal display device that is adapted to prevent a short defect between a gate metal film and a data metal film generated from an insulation breakage of an insulating film caused by a static electricity. In the device, a gate metal film is formed at the center of a semiconductor layer with being interleaved with a first insulating film. A connecting metal film is connected to the gate metal film and is formed at a substrate. A second insulating film covers the gate metal film and the connecting metal film and is provided with a first contact hole to expose a part of each side surface of the semiconductor layer and the center portion of the connecting metal film. A data metal film is provided on the second insulating film contacting the semiconductor layer by way of the first contact hole formed in each side surface of the semiconductor layer.

Abstract: Disclosed are apparatus and method for ultrasonically dispersing a silica sol such as is used in a process of manufacturing a silica glass by a sol-gel method. The apparatus includes a sol feeder for holding a sol to be dispersed, a sol container for containing the ultrasonically dispersed sol, a medium tank having a liquid-phase ultrasonic medium, an ultrasonic vibrator for generating ultrasonic waves within the tank, and a sol pipe for providing a sol feeding path connecting the sol feeder and the sol container to each other, the sol pipe having a portion submerged under the ultrasonic medium in the medium tank. The portion of the sol pipe submerged under the ultrasonic medium has a shape bent in a zigzagged fashion.

Abstract: A thin film transistor (TFT) has lightly doped drains which includes heavily doped regions and lightly doped regions. The lightly doped drains are formed simultaneously by a single doping process through a gate insulating layer having different thicknesses. The TFT is fabricated by forming an active layer on an insulated substrate, forming an insulating layer on the active layer, forming a conductive layer on the insulating layer, forming a photoresist pattern on the conductive layer, forming a gate electrode by over etching the conductive layer by using the photoresist pattern as a mask. The first insulating layer is then partially etched by using the photoresist pattern as a mask. As a result, the portions of the first insulating layer overlapped by the photoresist pattern is thicker than the other portions not overlapped by the photoresist pattern. When the entire TFT is induced to impurities, the active regions substantial below the thicker insulating region form the lightly doped drains.

Abstract: According to various aspects and embodiments of this invention, a semiconductor device having many pins can effectively be tested using a test system having fewer pins. A semiconductor device test system and method are provided to effectively test a semiconductor device having many pins. The test system includes a pin electronics (PE) card and a pattern memory. The PE card preferably includes a plurality of comparator and driver units, wherein each comparator and driver unit can include a driver for driving a predetermined input signal pattern to be applied to an input pin of the semiconductor device and a comparator for comparing data output from an output pin of the semiconductor device with a predetermined output signal pattern. Some or all of the pins of the semiconductor device are divided into pin groups having K number of pins.

Abstract: A fabrication method of graded index silica glass is disclosed. The method according to the present invention includes the steps of dispersing to form sol by mixing a starting material with a dispersion medium; molding the sol into a moisturized gel with a predetermined shape using a molding frame and separating the moisturized gel from the molding frame; drying the moisturized gel under a predetermined temperature and humidity level to remove the dispersion medium and to form a first dry gel having a predetermined moisture content distribution, hydrolyzing the moisture remained in the first dry gel and an additive solution by putting the first dry gel into the additive solution; re-drying the first dry gel, which underwent said hydrolysis, to form a second dry gel; and, thermal processing the second dry gel by supplying reaction gas thereto, removing impurities therefrom and annealing for isolation.

Abstract: A liquid crystal display and a method for fabricating the same include a first substrate having an active layer with source/drain regions formed therein, a gate line and a data line extending in directions perpendicular to each other formed thereon, a dummy gate insulating film and a dummy gate electrode both formed on the first substrate in fixed patterns isolated from the gate line, an interlayer insulating film on the first substrate inclusive of the dummy gate electrode with a step, a drain electrode formed on the interlayer insulating film to overlap on upper regions of the dummy gate electrode so as to be in contact with the drain region and have a step to the data line, the data line formed on the interlayer insulating having a step to the drain electrode, a passivation film formed on the interlayer insulating film inclusive of the dummy gate electrode and the data line, a contact hole formed to expose the drain electrode overlapped with the dummy gate electrode, and a pixel electrode overlapping upper