Abstract: The present invention discloses a method of constructing a solid slippery surface, belonging to the technical field of preparation of lubricating materials. The method of constructing a solid slippery surface comprises (1) constructing a metal oxide coating on the surface of a metal substrate by anodic oxidation, and then modifying the metal oxide coating using a low surface energy material to afford a superhydrophobic coating; and (2) fulling mixing photothermal nanoparticles and solid paraffin, followed by infusing the mixture onto the surface of the superhydrophobic coating to afford the solid slippery surface. The preparation method of the present invention is performed in a simple process and is environmentally friendly. The solid slippery surface constructed in the present invention has excellent photothermal and anti-icing performance, making some improvements in the field of copper metal anti-icing.

Abstract: The present invention discloses a method of constructing a solid slippery surface, belonging to the technical field of preparation of lubricating materials. The method of constructing a solid slippery surface comprises (1) constructing a metal oxide coating on the surface of a metal substrate by anodic oxidation, and then modifying the metal oxide coating using a low surface energy material to afford a superhydrophobic coating; and (2) fulling mixing photothermal nanoparticles and solid paraffin, followed by infusing the mixture onto the surface of the superhydrophobic coating to afford the solid slippery surface. The preparation method of the present invention is performed in a simple process and is environmentally friendly. The solid slippery surface constructed in the present invention has excellent photothermal and anti-icing performance, making some improvements in the field of copper metal anti-icing.

Abstract: There is provided a CMOSFET device with threshold voltage controlled by means of interface dipoles and a method of fabricating the same. A cap layer, for example a very thin layer of poly-silicon, amorphous silicon, or SiO2, is interposed inside high-k gate dielectric layers of the CMOSFET device, and the threshold voltage is adjusted by means of the interface dipoles formed by the cap layer inside the high-k gate dielectric layers. According to the present invention, it is possible to effectively optimize the threshold voltage of the CMOSFET device without significantly increasing EOT thereof.