Abstract: A thin film coating system includes at least one first supporting roller, a coating device, and at least one drying device. The first supporting roller is configured to rotate based on a rotating central axis. The coating device has an opening. The opening of the coating device faces toward the first supporting roller. The coating device is configured to coat a flowable material toward the first supporting roller along a first direction through the opening. The drying device is located at a side of the rotating central axis adjacent to the coating device in the first direction and is configured to dry the flowable material.

Abstract: An organic light emitting diode includes a substrate, a bottom electrode, a first dielectric layer, a second dielectric layer, an organic light emitting layer, and a top electrode. The bottom electrode is disposed on the substrate. The first dielectric layer is disposed on the bottom electrode and has a first opening. The second dielectric layer is disposed on the first dielectric layer and has a second opening. The second opening is aligned with the first opening and exposes a portion of an upper surface of the bottom electrode. The organic light emitting layer is disposed in the first opening and the second opening. The organic light emitting layer contact the potion of the upper surface of the bottom electrode. The top electrode covers the organic light emitting layer.

Abstract: A method manufacturing a thin film transistor is provided. A gate, a first insulation layer covering the gate, a semiconductor layer over the gate, and a first photoresist pattern are sequentially formed on a substrate. The semiconductor layer is patterned into a channel layer by using the first photoresist pattern as a mask and the first photoresist pattern is subsequently shrunken to remain a portion of the first photoresist pattern on the channel layer. A conductive material layer covering the remained portion of the first photoresist pattern, the channel layer and the first insulation layer is patterned by using a second photoresist pattern as a mask to form a source and a drain separated by a gap region exposing the remained portion. The second photoresist pattern and the remained portion are removed by performing a stripping process to expose the channel layer between the source and the drain.

Abstract: A method manufacturing a thin film transistor is provided. A gate, a first insulation layer covering the gate, a semiconductor layer over the gate, and a first photoresist pattern are sequentially formed on a substrate. The semiconductor layer is patterned into a channel layer by using the first photoresist pattern as a mask and the first photoresist pattern is subsequently shrunken to remain a portion of the first photoresist pattern on the channel layer. A conductive material layer covering the remained portion of the first photoresist pattern, the channel layer and the first insulation layer is patterned by using a second photoresist pattern as a mask to form a source and a drain separated by a gap region exposing the remained portion. The second photoresist pattern and the remained portion are removed by performing a stripping process to expose the channel layer between the source and the drain.

Abstract: A method for forming an oxide thin film transistor is provided. A gate electrode, a semiconductor insulation layer and a metal oxide layer is sequentially disposed on a substrate. A first patterned photo-resist layer is disposed on the metal oxide layer using a gray-level mask. The first patterned photo-resist layer is used as a mask to etch the metal oxide layer to form a patterned metal oxide layer. A part of the first patterned photo-resist layer is removed to form a second patterned photo-resist layer. A metal layer is formed and a third patterned photo-resist layer is used as a mask to etch the metal layer to form a source region and a drain region and to expose the second patterned photo-resist layer. The third patterned photo-resist layer and a part of second patterned photo-resist layer are removed to form a fourth patterned photo-resist layer.

Abstract: A manufacturing method for a TFT array substrate includes providing a substrate; defining a plurality of normal alignment regions and a plurality of abnormal alignment regions on the substrate; forming an insulating layer and a transparent conductive layer on the substrate; performing a patterning process to at least one of the insulating layer and the transparent conductive layer to form a plurality of alignment structures in each abnormal alignment region; forming an alignment material layer on the substrate, the alignment material layer having a plurality of first alignment slits formed along the alignment structures in each of the abnormal alignment regions; and performing a rubbing alignment process to form a plurality of second alignment slits on the alignment material layer in each of the normal alignment regions along a alignment direction.

Abstract: A thin film transistor (TFT) array substrate includes a substrate having a plurality of normal alignment regions, a plurality of abnormal alignment regions, and a device region defined thereon, a plurality of scan lines, a plurality of data lines, a plurality of storage electrode lines, and a plurality of switch devices positioned in the device region, a plurality of alignment structures positioned in the abnormal alignment regions, and an alignment layer formed on the substrate and the alignment structures. The alignment layer further includes a plurality of first alignment slits covering the alignment structures in the abnormal alignment regions and a plurality of second alignment slits in the normal alignment regions. A depth and a width of the second alignment slits are identical to a depth and a width of the first alignment slits.

Abstract: A color filter substrate includes a transparent plate, a black matrix, a plurality of filter layers, a plurality of first support pads, and a transparent conductive layer. The transparent plate has a plane. The black matrix is disposed on the plane and has a plurality of grid areas. The filter layers are disposed on the plane and located in the grid areas respectively. The first support pads partially cover the black matrix. Each of the first support pads is located among adjacent four filter layers. An area on the black matrix covered by each of the first support pads is in a shape of a cross. The first support pads are connected to the filter layers. Each first support pad includes a first pad layer, a second pad layer, and a third pad layer. The transparent conductive layer covers the filter layers, the first support pads, and the black matrix.

Abstract: A thin film transistor (TFT) array substrate includes a substrate having a plurality of normal alignment regions, a plurality of abnormal alignment regions, and a device region defined thereon, a plurality of scan lines, a plurality of data lines, a plurality of storage electrode lines, and a plurality of switch devices positioned in the device region, a plurality of alignment structures positioned in the abnormal alignment regions, and an alignment layer formed on the substrate and the alignment structures. The alignment layer further includes a plurality of first alignment slits covering the alignment structures in the abnormal alignment regions and a plurality of second alignment slits in the normal alignment regions. A depth and a width of the second alignment slits are identical to a depth and a width of the first alignment slits.

Abstract: A fabricating method of a color filter substrate includes following steps. First, a base is provided. A patterned color filter film layer having a plurality of recesses is then formed on the base. Next, a common electrode layer is formed on the patterned color filter film layer and the base. Here, the common electrode layer conforms to surfaces of the recesses. Thereafter, a plurality of shelters are formed on the common electrode layer and correspond to the recesses.

Abstract: A composite structure and a touch device are provided. The composite structure includes a substrate and a transparent conductive pattern layer. The substrate has a central area and a peripheral area. The transparent conductive pattern layer is disposed on the substrate and has a plurality of recess-portions. The recess-portions are disposed on a side surface of the transparent conductive pattern layer away from the substrate and at least located in the peripheral area. A depth of each of the recess portions is smaller than or equal to a thickness of the transparent conductive pattern layer. A width of each of the recess portions is between 100 ?m and 1000 ?m, and the recess portions are arranged in a ring-shape or arranged in an array.

Abstract: A liquid crystal display substrate includes a first active area and a second active area on the liquid crystal display substrate, a first black matrix and a second black matrix respectively surrounding the first active area and the second active area, a cutting region encircling the first black matrix and the second black matrix, and at least a guarding wall disposed on the black matrix or on the cutting region.

Abstract: A color filter substrate including a base, a patterned color filter film layer, a common electrode layer and shelters is provided. The patterned color filter film layer is disposed on the base. Here, the patterned color filter film layer has recesses. Additionally, the patterned color filter film layer and the base are covered by the common electrode layer conforming to surfaces of the recesses. Moreover, the recesses and the common electrode layer are covered by the shelters.

Abstract: A liquid crystal display panel and a method of fabricating the same are provided. In the method, a first substrate is provided, and gates and scan lines are formed. An insulation layer covering the gates and the scan lines is formed, and a channel layer is formed on the insulation layer. A source and a drain are formed on each channel layer, and a data line electrically connected to each source is formed. A plurality of pixel electrodes are then formed, and a second substrate is provided. A plurality of pillar spacers are formed on the second substrate, and the first substrate and the second substrate are assembled. A liquid crystal layer then fills between the first substrate and the second substrate.

Abstract: A liquid crystal display substrate includes a first active area and a second active area on the liquid crystal display substrate, a first black matrix and a second black matrix respectively surrounding the first active area and the second active area, a cutting region encircling the first black matrix and the second black matrix, and at least a guarding wall disposed on the black matrix or on the cutting region.

Abstract: A color filter substrate, including a substrate, a light shielding layer, a color filter layer, a conductive layer, first and second spacers, is provided. The substrate has a displaying area and a dummy area. The light shielding layer is disposed on the substrate. The color filter layer is disposed on the substrate and covers the light shielding layer. The color filter layer has at least one first concave in the dummy area. The conductive layer is disposed on the substrate and covers the color filter layer and the light shielding layer. The first spacers are disposed on the conductive layer and are in the dummy area. Each first spacer has a fixing part and a supporting part. And the fixing part is disposed in the first concave. A through hole is in each first spacer. The second spacers are disposed on the conductive layer and are in the displaying area.

Abstract: A color filter substrate adapted for being assembled with an active device array substrate is provided. The active device array substrate includes active devices, scan lines and data lines. Protrusions are formed at the regions where the scan lines overlap with the data lines. The color filter substrate includes a substrate, a light shielding layer, a color filter layer, a conductive layer and spacers. The spacers are disposed on the substrate, and each spacer has a clipping opening therein, and at least one of the active devices and protrusions is wedged in the corresponding clipping opening. Therefore, the precision of panel assembling is increased.

Abstract: A liquid crystal display panel and a method of fabricating the same are provided. In the method, a first substrate is provided, and gates and scan lines are formed. An insulation layer covering the gates and the scan lines is formed, and a channel layer is formed on the insulation layer. A source and a drain are formed on each channel layer, and a data line electrically connected to each source is formed. A plurality of pixel electrodes are then formed, and a second substrate is provided. A plurality of pillar spacers are formed on the second substrate, and the first substrate and the second substrate are assembled. A liquid crystal layer then fills between the first substrate and the second substrate.

Abstract: A liquid crystal display panel includes a first substrate; a plurality of scan lines and a plurality of data lines disposed on the first substrate; an insulation layer disposed between the scan line and the data line; a plurality of thin film transistors (TFT), each TFT including a gate, a channel layer, a source, and a drain; a plurality of pixel electrodes; a plurality of retaining wall patterns disposed on the insulation layer and the material thereof is selected from at least one of the source/drain and channel layer; a second substrate disposed opposite to the first substrate; a liquid crystal layer between the first and second substrate; and a plurality of pillar spacers between the first and second substrate, wherein one end of the pillar spacer is disposed inside the retaining wall pattern.

Abstract: A method for manufacturing a display substrate is disclosed, which includes the following steps: providing a substrate; forming a plurality of bumps on an active area of the substrate and at least one marking pattern on a non-active area of the substrate; and staining the marking pattern or filling a material having low transmittance ratio into the marking pattern. The present invention further discloses a method for making a display substrate, including the steps: providing a substrate; forming a shadow layer on a non-active area of the substrate; forming a plurality of bumps on an active area of the substrate and at least one marking pattern on the shadow layer of the non-active area on the substrate; and removing a part of the shadow layer not covered by the marking pattern.