Abstract: A nitride wet etch in which liquid TEOS is flowed directly into the hot phosphoric acid bath before wafer etching begins. This preloads the bath chemistry with silicate ions, and thus helps assure very high selectivity to silicon oxides.

Abstract: A method is given for removing excess oxide from active areas after shallow trench isolation, without the use of chemical-mechanical polishing. A nitride mask protects active areas during the etch of isolation trenches. The trenches are filled with oxide, using high density plasma deposition, which simultaneously etches, providing a sloping contour around the isolation trenches. A further layer of nitride is used to provide a cap over the trench which seals to the underlying layer of nitride. The cap layer of nitride receives a patterned etch to remove the cap only over the active areas. This allows a selective etch to remove the excess oxide, which can be followed by a selective etch to remove the nitride layers.

Abstract: There is provided a filter medium comprising a microporous polyvinylidene fluoride membrane and a polymer containing a positively charged organic phosphonium compound grafted to the membrane in a concentration sufficient to provide a surface of said membrane with a positive charge such that there is minimal susceptibility to the extraction of said polymer. The polymer may also contain an acrylate or methacrylate. There is also provided a method for ultrapurifying a liquid and an ultrapurifying system for water.