Abstract: The present invention provides a micro light-emitting diode (LED). A conductive layer is disposed on a substrate. A light-emitting assembly is disposed on the conductive layer. A first light-emitting semiconductor and a second light-emitting semiconductor of the light-emitting assembly are stacked vertically. A first conductive bump and a second conductive bump of a conductive bump set electrical conduct the first light-emitting semiconductor and the second light-emitting semiconductor. Thereby, the volume of the micro LED can be shrunk.

Abstract: A micro light emitting diode (LED) is provided. The micro LED includes a first light emitting unit and a second light emitting unit disposed on a top of the first light emitting unit. A first electrode of the first light emitting unit is inserted through a groove of the second light emitting unit and electrically connected with a substrate. A third light emitting unit is either shielded by the first light emitting unit or arranged at one side of the first light emitting unit. The first light emitting unit, the second light emitting unit, and the third light emitting unit are connected with a common connection point of the substrate by respective common electrodes. Thus an area of a light emitting surface of the micro LED is further reduced.

Abstract: The present invention provides an inspection device. A light source emits a mixed light beam to an object to enable photoluminescence of the object and generating an inspection light beam. After the inspection light beam passes through one of a plurality of filters, it is emitted to a beam splitter. A part of the inspection light beam is emitted to a shortwave filter while the other part is emitted to a longwave filter. The shortwave filter filters out the shortwaves of the first split light beam and the filtered first split light beam is emitted to a first sensing element. The longwave filter filters out the longwaves of the second split light beam and the filtered second split light beam is emitted to a second sensing element. The filter conversion module uses a conversion structure to alter the plurality of filters.

Abstract: The present invention provides a vertically stacked light-emitting diode (LED) structure, which comprises a substrate, a first light-emitting device, a first reflection layer, a second light-emitting device, a second reflection layer, and a third light-emitting device. The layers are stacked sequentially. The first light-emitting device, the second light-emitting device, and the third light-emitting device are connected electrically to the pads located on the edges of the substrate. In addition, the first reflection layer and the second reflection layer are used to reflect and filter the light from the first light-emitting device, the second light-emitting device, and the third light-emitting device. By using this structure, the area of the light-emitting diode structure can be further shrunk.

Abstract: A micro light emitting diode (LED) is provided. The micro LED includes a first light emitting unit and a second light emitting unit disposed on a top of the first light emitting unit. A first electrode of the first light emitting unit is inserted through a groove of the second light emitting unit and electrically connected with a substrate. A third light emitting unit is either shielded by the first light emitting unit or arranged at one side of the first light emitting unit. The first light emitting unit, the second light emitting unit, and the third light emitting unit are connected with a common connection point of the substrate by respective common electrodes. Thus an area of a light emitting surface of the micro LED is further reduced.

Abstract: A display panel includes a substrate and a plurality of pixel structures disposed on the substrate. Each of the pixel structures includes a first light-emitting element, a second light-emitting element, and a third light-emitting element. The first light-emitting element is disposed on the substrate and configured to generate a first colored light. A light output surface of the first light-emitting element includes a combined region. The second light-emitting element is disposed on a part of the combined region and configured to generate a second colored light. The third light-emitting element is disposed on the other part of the combined region and configured to generate a third colored light.

Abstract: A micro light-emitting diode (LED) display is provided. The micro LED display includes a panel, at least one first pixel, and a least one second pixel. The panel is provided with a first display area and a second display area. The first pixel is disposed on the first display area and including a first sub-pixel. The first pixel receives a first control signal. The second pixel which includes a plurality of second sub-pixels is arranged at the second display area and receiving a second control signal. Thereby the display with pixel variation is provided for lower power consumption and reduced manufacturing cost.

Abstract: The present invention provides a micro light-emitting diode (LED). A conductive layer is disposed on a substrate. A light-emitting assembly is disposed on the conductive layer. A first light-emitting semiconductor and a second light-emitting semiconductor of the light-emitting assembly are stacked vertically. A first conductive bump and a second conductive bump of a conductive bump set electrical conduct the first light-emitting semiconductor and the second light-emitting semiconductor. Thereby, the volume of the micro LED can be shrunk.

Abstract: All-printed paper-based substrate memory devices are described. In an embodiment, a paper-based memory device is prepared by coating one or more areas of a paper substrate with a conductor material such as a carbon paste, to form a first electrode of a memory, depositing a layer of insulator material, such as titanium dioxide, over one or more areas of the conductor material, and depositing a layer of metal over one or more areas of the insulator material to form a second electrode of the memory. In an embodiment, the device can further include diodes printed between the insulator material and the second electrode, and the first electrode and the second electrodes can be formed as a crossbar structure to provide a WORM memory. The various layers and the diodes can be printed onto the paper substrate by, for example, an ink jet printer.

Abstract: All-printed paper-based substrate memory devices are described. In an embodiment, a paper-based memory device is prepared by coating one or more areas of a paper substrate with a conductor material such as a carbon paste, to form a first electrode of a memory, depositing a layer of insulator material, such as titanium dioxide, over one or more areas of the conductor material, and depositing a layer of metal over one or more areas of the insulator material to form a second electrode of the memory. In an embodiment, the device can further include diodes printed between the insulator material and the second electrode, and the first electrode and the second electrodes can be formed as a crossbar structure to provide a WORM memory. The various layers and the diodes can be printed onto the paper substrate by, for example, an ink jet printer.

Abstract: Two-dimensional (2D) transition-metal dichalcogenides have emerged as a promising material system for optoelectronic applications, but their primary figure-of-merit, the room-temperature photoluminescence quantum yield (QY) is extremely poor. The prototypical 2D material, MoS2 is reported to have a maximum QY of 0.6% which indicates a considerable defect density. We report on an air-stable solution-based chemical treatment by an organic superacid which uniformly enhances the photoluminescence and minority carrier lifetime of MoS2 monolayers by over two orders of magnitude. The treatment eliminates defect-mediated non-radiative recombination, thus resulting in a final QY of over 95% with a longest observed lifetime of 10.8±0.6 nanoseconds. Obtaining perfect optoelectronic monolayers opens the door for highly efficient light emitting diodes, lasers, and solar cells based on 2D materials.

Abstract: All-printed paper-based substrate memory devices are described. In an embodiment, a paper-based memory device is prepared by coating one or more areas of a paper substrate with a conductor material such as a carbon paste, to form a first electrode of a memory, depositing a layer of insulator material, such as titanium dioxide, over one or more areas of the conductor material, and depositing a layer of metal over one or more areas of the insulator material to form a second electrode of the memory. In an embodiment, the device can further include diodes printed between the insulator material and the second electrode, and the first electrode and the second electrodes can be formed as a crossbar structure to provide a WORM memory. The various layers and the diodes can be printed onto the paper substrate by, for example, an ink jet printer.

Abstract: Two-dimensional (2D) transition-metal dichalcogenides have emerged as a promising material system for optoelectronic applications, but their primary figure-of-merit, the room-temperature photoluminescence quantum yield (QY) is extremely poor. The prototypical 2D material, MoS2 is reported to have a maximum QY of 0.6% which indicates a considerable defect density. We report on an air-stable solution-based chemical treatment by an organic superacid which uniformly enhances the photoluminescence and minority carrier lifetime of MoS2 monolayers by over two orders of magnitude. The treatment eliminates defect-mediated non-radiative recombination, thus resulting in a final QY of over 95% with a longest observed lifetime of 10.8±0.6 nanoseconds. Obtaining perfect optoelectronic monolayers opens the door for highly efficient light emitting diodes, lasers, and solar cells based on 2D materials.

Abstract: All-printed paper-based substrate memory devices are described. In an embodiment, a paper-based memory device is prepared by coating one or more areas of a paper substrate with a conductor material such as a carbon paste, to form a first electrode of a memory, depositing a layer of insulator material, such as titanium dioxide, over one or more areas of the conductor material, and depositing a layer of metal over one or more areas of the insulator material to form a second electrode of the memory. In an embodiment, the device can further include diodes printed between the insulator material and the second electrode, and the first electrode and the second electrodes can be formed as a crossbar structure to provide a WORM memory. The various layers and the diodes can be printed onto the paper substrate by, for example, an ink jet printer.

Abstract: The present application relates to an ultrasound temperature mapping system and method. The ultrasound temperature mapping system for measuring a temperature of an object comprises an ultrasound transducer and a processing module. The ultrasound transducer is configured to acquire a first image and a second image with respect to the object. The processing module implements a zero-crossing algorithm to process the first image to yield a plurality of first zero-crossing points and implements a cross-correlation algorithm to process the first image and the second images based on the plurality of first zero-crossing points so as to obtain a plurality of displacements. The processing module further calculates the temperature based on the plurality of displacements.