Patents by Inventor Der-Hsien Lien
Der-Hsien Lien has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10340448Abstract: All-printed paper-based substrate memory devices are described. In an embodiment, a paper-based memory device is prepared by coating one or more areas of a paper substrate with a conductor material such as a carbon paste, to form a first electrode of a memory, depositing a layer of insulator material, such as titanium dioxide, over one or more areas of the conductor material, and depositing a layer of metal over one or more areas of the insulator material to form a second electrode of the memory. In an embodiment, the device can further include diodes printed between the insulator material and the second electrode, and the first electrode and the second electrodes can be formed as a crossbar structure to provide a WORM memory. The various layers and the diodes can be printed onto the paper substrate by, for example, an ink jet printer.Type: GrantFiled: December 10, 2015Date of Patent: July 2, 2019Assignee: KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGYInventors: Jr-Hau He, Chun-Ho Lin, Der-Hsien Lien
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Patent number: 9852927Abstract: Two-dimensional (2D) transition-metal dichalcogenides have emerged as a promising material system for optoelectronic applications, but their primary figure-of-merit, the room-temperature photoluminescence quantum yield (QY) is extremely poor. The prototypical 2D material, MoS2 is reported to have a maximum QY of 0.6% which indicates a considerable defect density. We report on an air-stable solution-based chemical treatment by an organic superacid which uniformly enhances the photoluminescence and minority carrier lifetime of MoS2 monolayers by over two orders of magnitude. The treatment eliminates defect-mediated non-radiative recombination, thus resulting in a final QY of over 95% with a longest observed lifetime of 10.8±0.6 nanoseconds. Obtaining perfect optoelectronic monolayers opens the door for highly efficient light emitting diodes, lasers, and solar cells based on 2D materials.Type: GrantFiled: October 15, 2016Date of Patent: December 26, 2017Assignee: The Regents of the University of CaliforniaInventors: Matin Amani, Der-Hsien Lien, Daisuke Kiriya, James Bullock, Ali Javey
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Patent number: 9853088Abstract: All-printed paper-based substrate memory devices are described. In an embodiment, a paper-based memory device is prepared by coating one or more areas of a paper substrate with a conductor material such as a carbon paste, to form a first electrode of a memory, depositing a layer of insulator material, such as titanium dioxide, over one or more areas of the conductor material, and depositing a layer of metal over one or more areas of the insulator material to form a second electrode of the memory. In an embodiment, the device can further include diodes printed between the insulator material and the second electrode, and the first electrode and the second electrodes can be formed as a crossbar structure to provide a WORM memory. The various layers and the diodes can be printed onto the paper substrate by, for example, an ink jet printer.Type: GrantFiled: December 31, 2015Date of Patent: December 26, 2017Assignee: KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGYInventors: Jr-Hau He, Chun-Ho Lin, Der-Hsien Lien
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Publication number: 20170365779Abstract: All-printed paper-based substrate memory devices are described. In an embodiment, a paper-based memory device is prepared by coating one or more areas of a paper substrate with a conductor material such as a carbon paste, to form a first electrode of a memory, depositing a layer of insulator material, such as titanium dioxide, over one or more areas of the conductor material, and depositing a layer of metal over one or more areas of the insulator material to form a second electrode of the memory. In an embodiment, the device can further include diodes printed between the insulator material and the second electrode, and the first electrode and the second electrodes can be formed as a crossbar structure to provide a WORM memory. The various layers and the diodes can be printed onto the paper substrate by, for example, an ink jet printer.Type: ApplicationFiled: December 10, 2015Publication date: December 21, 2017Inventors: JR-HAU HE, CHUN-HO LIN, DER-HSIEN LIEN
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Publication number: 20170110338Abstract: Two-dimensional (2D) transition-metal dichalcogenides have emerged as a promising material system for optoelectronic applications, but their primary figure-of-merit, the room-temperature photoluminescence quantum yield (QY) is extremely poor. The prototypical 2D material, MoS2 is reported to have a maximum QY of 0.6% which indicates a considerable defect density. We report on an air-stable solution-based chemical treatment by an organic superacid which uniformly enhances the photoluminescence and minority carrier lifetime of MoS2 monolayers by over two orders of magnitude. The treatment eliminates defect-mediated non-radiative recombination, thus resulting in a final QY of over 95% with a longest observed lifetime of 10.8±0.6 nanoseconds. Obtaining perfect optoelectronic monolayers opens the door for highly efficient light emitting diodes, lasers, and solar cells based on 2D materials.Type: ApplicationFiled: October 15, 2016Publication date: April 20, 2017Applicant: The Regents of the University of CaliforniaInventors: Matin Amani, Der-Hsien Lien, Daisuke Kiriya, James Bullock, Ali Javey
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Publication number: 20160190445Abstract: All-printed paper-based substrate memory devices are described. In an embodiment, a paper-based memory device is prepared by coating one or more areas of a paper substrate with a conductor material such as a carbon paste, to form a first electrode of a memory, depositing a layer of insulator material, such as titanium dioxide, over one or more areas of the conductor material, and depositing a layer of metal over one or more areas of the insulator material to form a second electrode of the memory. In an embodiment, the device can further include diodes printed between the insulator material and the second electrode, and the first electrode and the second electrodes can be formed as a crossbar structure to provide a WORM memory. The various layers and the diodes can be printed onto the paper substrate by, for example, an ink jet printer.Type: ApplicationFiled: December 31, 2015Publication date: June 30, 2016Inventors: Jr-Hau He, Chun-Ho Lin, Der-Hsien Lien
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Publication number: 20130116560Abstract: The present application relates to an ultrasound temperature mapping system and method. The ultrasound temperature mapping system for measuring a temperature of an object comprises an ultrasound transducer and a processing module. The ultrasound transducer is configured to acquire a first image and a second image with respect to the object. The processing module implements a zero-crossing algorithm to process the first image to yield a plurality of first zero-crossing points and implements a cross-correlation algorithm to process the first image and the second images based on the plurality of first zero-crossing points so as to obtain a plurality of displacements. The processing module further calculates the temperature based on the plurality of displacements.Type: ApplicationFiled: March 13, 2012Publication date: May 9, 2013Applicant: National Taiwan UniversityInventors: Wen-Shiang CHEN, Der-Hsien Lien, Chuin-Shan Chen, Jay Shieh, Chiung-Nien Chen, Chien-Cheng Chang, Yu-Chen Shu, Chang-Wei Huang