Abstract: A circuit component comprises a row of transistors. The row may contain a first active FET with a source region and a drain region. The row may also contain a first active dummy FET that shares the source region and that also has a diffusion region. The row may also contain a second active FET and a second active dummy FET, positioned such that the active dummy FETs are located between the active FETs on the row. The row may also have an end positioned such that the first active dummy FET is between the end and the first active FET. A supply of current may be electrically connected to the source diffusion regions. A load region may be electrically connected to the drain region. The first active FET and the first active dummy FET may have gates that share a voltage source or that have their own voltage source.

Abstract: Certain aspects of the present disclosure are directed to a circuit for driving a signal at an output node. The circuit generally includes a voltage divider network having a first terminal coupled to the output node. The circuit also includes a first transistor having a gate coupled to a second terminal of the voltage divider network and a plurality of transistors. A gate of each of the plurality of transistors may be coupled to a respective tap node of the voltage divider network, and the plurality of transistors may include a third transistor having a source coupled to a drain of the first transistor. The circuit may also include a second transistor coupled to the first transistor and having a gate coupled to an input node of the circuit.

Abstract: Certain aspects of the present disclosure are directed to a circuit for driving a signal at an output node. The circuit generally includes a voltage divider network having a first terminal coupled to the output node. The circuit also includes a first transistor having a gate coupled to a second terminal of the voltage divider network and a plurality of transistors. A gate of each of the plurality of transistors may be coupled to a respective tap node of the voltage divider network, and the plurality of transistors may include a third transistor having a source coupled to a drain of the first transistor. The circuit may also include a second transistor coupled to the first transistor and having a gate coupled to an input node of the circuit.

Abstract: A circuit component comprises a row of transistors. The row may contain a first active FET with a source region and a drain region. The row may also contain a first active dummy FET that shares the source region and that also has a diffusion region. The row may also contain a second active FET and a second active dummy FET, positioned such that the active dummy FETs are located between the active FETs on the row. The row may also have an end positioned such that the first active dummy FET is between the end and the first active FET. A supply of current may be electrically connected to the source diffusion regions. A load region may be electrically connected to the drain region. The first active FET and the first active dummy FET may have gates that share a voltage source or that have their own voltage source.

Abstract: A method and circuit are provided for implementing adaptive control for optimization of pulsed resonant drivers, and a design structure on which the subject circuit resides. Peak detectors are used to detect a positive or up level reached by a resonant clock and negative or down level reached by the resonant clock. Each detected levels is compared to a reference level to determine when to vary the turn off timing of a clock driver pull-up device and/or a clock driver pull-down device. A positive peak detector controls the turn off time of the pull-up device and a negative peak detector controls a turn off time of the pull-down device in the pulsed resonant driver.

Abstract: A method and circuit are provided for implementing adaptive control for optimization of pulsed resonant drivers, and a design structure on which the subject circuit resides. Peak detectors are used to detect a positive or up level reached by a resonant clock and negative or down level reached by the resonant clock. Each detected levels is compared to a reference level to determine when to vary the turn off timing of a clock driver pull-up device and/or a clock driver pull-down device. A positive peak detector controls the turn off time of the pull-up device and a negative peak detector controls a turn off time of the pull-down device in the pulsed resonant driver.

Abstract: A method and circuit are provided for implementing adaptive control for optimization of pulsed resonant drivers, and a design structure on which the subject circuit resides. Peak detectors are used to detect a positive or up level reached by a resonant clock and negative or down level reached by the resonant clock. Each detected levels is compared to a reference level to determine when to vary the turn off timing of a clock driver pull-up device and/or a clock driver pull-down device. A positive peak detector controls the turn off time of the pull-up device and a negative peak detector controls a turn off time of the pull-down device in the pulsed resonant driver.

Abstract: A method and circuit are provided for implementing adaptive control for optimization of pulsed resonant drivers, and a design structure on which the subject circuit resides. Peak detectors are used to detect a positive or up level reached by a resonant clock and negative or down level reached by the resonant clock. Each detected levels is compared to a reference level to determine when to vary the turn off timing of a clock driver pull-up device and/or a clock driver pull-down device. A positive peak detector controls the turn off time of the pull-up device and a negative peak detector controls a turn off time of the pull-down device in the pulsed resonant driver.

Abstract: A gated differential logic circuit can include a header device having a first terminal coupled to a supply voltage, and a second terminal; a second header device having a third terminal coupled to the supply voltage, and a fourth terminal; a footer device having a fifth terminal coupled to ground, and a sixth terminal; and a second footer device having a seventh terminal coupled to ground, and an eighth terminal. The circuit further includes a driver circuit having a first supply terminal coupled to the second terminal and a first ground terminal coupled to the sixth terminal, and a second driver circuit having a second supply terminal coupled to the fourth terminal and a second ground terminal coupled to the eighth terminal. A capacitor can couple the first supply terminal to the second ground terminal, while a second capacitor may couple the second supply terminal to the first ground terminal.

Abstract: A semiconductor chip device may include a silicon on insulator (SOI) base, a first transistor, and a voltage device. The SOI base may include a semiconductor substrate having a first doped layer and a second doped layer directly on the first doped layer, a buried oxide layer directly on the second doped layer, and a first moat electrically isolating a first bias region of the second doped layer. The first bias region may be electrically coupled to a current source. The first transistor may be formed above the buried oxide layer and the first bias region. The first transistor may include a first drain a first source a first body a first gate and a first back gate. The voltage device may be electrically coupled to the first back gate and the first gate and configured to maintain a voltage difference between the first gate and the first back gate.

Abstract: A semiconductor chip device may include a silicon on insulator (SOI) base, a first transistor, and a voltage device. The SOI base may include a semiconductor substrate having a first doped layer and a second doped layer directly on the first doped layer, a buried oxide layer directly on the second doped layer, and a first moat electrically isolating a first bias region of the second doped layer. The first bias region may be electrically coupled to a current source. The first transistor may be formed above the buried oxide layer and the first bias region. The first transistor may include a first drain a first source a first body a first gate and a first back gate. The voltage device may be electrically coupled to the first back gate and the first gate and configured to maintain a voltage difference between the first gate and the first back gate.

Abstract: The present invention provides a power saving method and apparatus for powering a lower voltage device from a higher voltage power source. The apparatus includes a switch having an input coupled to an output of the higher voltage power source. The apparatus further includes a high-to-low voltage converter having an input coupled to an output of the switch. The apparatus also includes a power plug having an input coupled to an output of the high-to-low voltage power converter, and an output configured to receive a power socket of the low voltage device. Finally, the apparatus includes a switch actuator coupled to the power plug and the switch. When the power plug is operatively engaged within the power socket of the lower voltage device, the switch actuator closes the switch. When the power plug is operatively disengaged from the power plug, the switch actuator opens the switch.

Abstract: The present invention provides a power saving method and apparatus for powering a lower voltage device from a higher voltage power source. The apparatus includes a switch having an input coupled to an output of the higher voltage power source. The apparatus further includes a high-to-low voltage converter having an input coupled to an output of the switch. The apparatus also includes a power plug having an input coupled to an output of the high-to-low voltage power converter, and an output configured to receive a power socket of the low voltage device. Finally, the apparatus includes a switch actuator coupled to the power plug and the switch. When the power plug is operatively engaged within the power socket of the lower voltage device, the switch actuator closes the switch. When the power plug is operatively disengaged from the power plug, the switch actuator opens the switch.