Abstract: An improved laminated beam lead for microelectronic devices, e.g., thin film resistors, integrated circuits or the like includes a first metal adhesion layer, e.g. tantalum nitride having disposed thereover a barrier metal such as palladium or platinum, and a bulk beam material, e.g., gold.In accordance with one aspect of the present invention, a transverse discontinuity is formed in the barrier metalization layer such that normal forces applied to the end portion of the composite beam lead remote from the device chip will merely cause the beam lead to deform at the discontinuity rather than delaminating from the chip.