Abstract: The present invention provides an apparatus for acting upon charge particles in dependence upon on or more parameters including mass and/or energy and/or charged state of the particles. The apparatus includes an array of elongate magnetic poles extending longitudinally in an elongation direction of the array; an array reference surface extending in the array elongation direction and passing through the array with a magnetic pole on each side of the reference surface; a means for providing charged particles entering into or originating in the field of the magnetic pole array. The magnetic poles are configured in a plane perpendicular to the elongation direction to give parameter dependent change of direction to charged particles moving in array with a direction of movement substantially parallel to the reference surface, whereby parameter dependent selection of charged particles may be achieved by parameter dependent dispersion in a plane transverse to the reference surface.

Abstract: The present invention provides an apparatus for acting upon charge particles in dependence upon on or more parameters including mass and/or energy and/or charged state of the particles. The apparatus includes an array of elongate magnetic poles extending longitudinally in an elongation direction of the array; an array reference surface extending in the array elongation direction and passing through the array with a magnetic pole on each side of the reference surface; a means for providing charged particles entering into or originating in the field of the magnetic pole array. The magnetic poles are configured in a plane perpendicular to the elongation direction to give parameter dependent change of direction to charged particles moving in array with a direction of movement substantially parallel to the reference surface, whereby parameter dependent selection of charged particles may be achieved by parameter dependent dispersion in a plane transverse to the reference surface.

Abstract: A system for implanting ions of a prearranged chemical species into a plurality of semiconductor wafers. A beam analyzing arrangement receives an ion beam and selective separates various ion species in the beam on the basis of mass to produce an analyzed beam exiting the analyzing arrangement. A wafer scanning arrangement scans a plurality of wafers through the accelerated ion beam. The analyzing arrangement has an ion dispersion plane associated therewith and the source arrangement has an associated ion emitting envelope including an area pf substantial extension in a plane parallel to the ion dispersion plane and produces an ion beam characterized by a beam envelope which retains an area of substantial extension in a plane paralled to ion dispersion plane throughout the region between the source and the analyzing arrangement and by ions entering the analyzing arrangement travelling substantially either toward or from a common apparent line object perpendicular to the ion dispersion plane.

Abstract: Apparatus (28) for implanting ions into a target element (26) comprising a circular array of hot cathode, are discharge, ion sources (29) mounted on a rotary carousel (13) or a linear mechanism. An annular rotary support (15) around the carousel supports a plurality of extraction electrodes (18). A housing (20,23) defines an outlet path (32) for the ion beam from the ion source (29). The ion beam is directed through a beam analyzer (24) and through accelaration stages (25) to means (27) for scanning beam relative to the target (26) to be implanted. The carousel (13) and the annual support (15) can both be rotated, so as to bring into cooperating relationship required combinations of ion source (29) and extraction electrode (18).

Abstract: In ion implantation apparatus, a plurality of targets on supports are presented to an ion beam. The targets are moved back and forth in reciprocatory motion through the ion beam. Each target is reversed while outside the ion beam, and the reversals of the targets are effected while another target or targets is or are moving through the beam. Where two targets are presented, the sequence is that the two target supports follow each other through the ion beam in one direction, and then follow each other through the beam in the opposite direction, each target being reversed in direction while the other is passing through the beam.

Abstract: Apparatus for presenting target elements (16) such as semi-conductor wafers to an ion beam (13) for ion implantation comprises a support rotor (19) for carrying the targets (16) on support bases (21) mounted on arms (22) extending radially from a core structure (20) of the rotor. The target elements (16) are rotated by the rotor (19) through the ion beam to produce scanning across the target elements. Each support base (21) is rotatable about the radial axis of its support arm. The rotation of the base (21) allows adjustment of the ion implantation angle. The implantation normally takes place with the target vertical and the axis of scanning rotation horizontal. Each support base (21) is also rotatable through 90.degree. to allow loading and unloading of target elements while the support base is horizontal.

Abstract: A converter 26 for converting an angularly scanned ion beam 11 into a parallel scanned ion beam comprises first and second electrodes 27 and 28 positioned adjacent each other and shaped to follow concentric part-conical surfaces. The inner part-conical electrode 27 is at beam line potential and has an entry aperture 31 for receiving the ion beam, and an exit aperture 32 through which the beam exits after being bent through 90.degree. by a potential difference across the electrodes 27 and 28. The entry beam 11 is angularly scanned by an electrostatic scanner positioned where the beam 11 passes the cone axis 33, the beam being scanned through paths lying along radii of the cone axis. The exit beam 11 emerges in a direction which is substantially parallel to the cone axis throughout the angular scanning of the entry beam.

Abstract: A system for implanting ions into a target element including a source arrangement for producing an ion beam; a beam analyzing arrangement for receiving the ion beam and selectively separating various ion species in the beam on the basis of mass to produce an analyzed beam; and a beam resolving arrangement disposed in the path of the analyzed beam for permitting a preselected ion species to pass to the target element. The analyzing arrangement has an ion dispersion plane associated therewith. The source arrangement has an associated ion emitting envelope including an area of substantial extension in a plane parallel to the ion dispersion plane and producing ions entering said analyzing arrangement which are travelling substantially either toward or from a common apparent line object lying in a plane perpendicular to the ion dispersion plane.

Abstract: A system for post analysis acceleration of an ion beam to a selected energy without beam blow-up. A group of electrodes extablish a non-linear voltage gradient along the beam axis for accelerating and then decelerating the beam to the selected energy level with focusing.

Abstract: A method for operating an ion source having a filament-cathode and an anode. The method includes supplying direct current electrical power between the anode and the filament-cathode characterized by substantially constant arc current there between and varying arc voltage on the filament-cathode. Direct current electrical power is also supplied across the filament-cathode. The value of the arc voltage is monitored and the magnitude of electrical power supplied to the filament-cathode is altered in response to detected changes in the arc voltage to return the arc voltage to substantially a preset reference value. The monitoring step and the altering step are carried out at regular preset intervals. The altering step includes deriving an filament power error signal as a prearranged function which includes the difference in values between the monitored arc voltage and the preset reference value multiplied by a predefined integral gain value.

Abstract: An ion implantation system includes a beam generating arrangement for generating an ion beam characterized by good beam stability and for directing the ion beam along a prearranged path. A beam stopping arrangement is disposed in the path of the beam for stopping and collecting the ions in the beam. A workpiece scanning arrangement is positioned upstream of the beam stopping arrangement for scanning a workpiece through the beam in a prearranged combined fast scan directional motion and a slow scan directional motion with the slow scan directional motion being characterized by an end of scan position in which the ion beam falls completely on the beam stopping arrangement.

Abstract: The use, for heat transfer in evacuable or other equipment, of a thermally conductive fluid, confined by a flexible diaphragm, for heat transfer across the diaphragm between the fluid and a component placed in thermal contact with the diaphragm.

Abstract: An ion implantation system in which surfaces of ion flight tube and drift tube perpendicular to ion dispersion plane have geometric configuration which precludes sputtering of contaminants onto path through resolving slit.

Abstract: Evacuable equipment wherein for effective thermal transfer use is made of a thermally conductive fluid confined by a flexible diaphragm for heat transfer across the diaphragm between the fluid and a component forming part of or being treated in the equipment and situated under vacuum in thermal contact with the diaphragm, said diaphragm comprising a flexible gas-impermeable metal layer preventing uptake of gases by the fluid when the equipment is not under vacuum.

Abstract: A system for implanting ions into a target element including a source arrangement for producing an ion beam; a beam analyzing arrangement for receiving the ion beam and selectively separating various ion species in the beam on the basis of mass to produce an analyzed beam; and a beam resolving arrangement disposed in the path of the analyzed beam for permitting a preselected ion species to pass to the target element. The analyzing arrangement has an ion dispersion plane associated therewith. The source arrangement has an associated ion emitting envelope including an area of substantial extension in a plane parallel to the ion dispersion plane and producing ions entering said analyzing arrangement which are travelling substantially either toward or from a common apparent line object lying in a plane perpendicular to the ion dispersion plane.