Abstract: A data storage device (2) comprising a plurality of stacked layers (4) of memory cells (6) is disclosed. Each memory cell comprises a first magnetic layer (5), including an elongate curved portion (10), and a second magnetic layer. The first magnetic layer is adapted to be selectively magnetised to adopt one of a plurality of possible magnetised states, wherein the electrical resistance between the first magnetic layer and the second magnetic layer has a magnitude dependent upon the magnetised state of said first magnetic layer. Switching means is adapted to cause the first magnetic layer to switch between magnetised states thereof.

Abstract: A magnetic structure (2) comprising a magnetic layer (18) having an upper surface and a lower surface is disclosed. The magnetic layer comprises a plurality of regions, each of which is adapted to be magnetised predominantly along a first or second direction. The magnetic layer further comprises at least one structured feature (21) adapted to prevent passage of a magnetic domain wall (26) of a respective type and at least one second structural feature (22) adapted to prevent propagation of at least one magnetic domain wall (34) of a second type. A data storage device (46) incorporating the magnetic structure is also disclosed.

Abstract: An adhesive binder composition containing an isocyanate-functional resin modified with a protein, preferably with a source of soy protein, and the use of the binder for preparing wood composites, especially OSB.

Abstract: An integrating magnetic sensor is described which comprises a sensor element made from a filament of substantially amorphous material which exhibits giant magneto-impedance and means for applying a bias field to the said sensor element so that it operates in the high field section of the giant magneto-impedance response.