Patents by Inventor Derek B. Wong

Derek B. Wong has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for selectively sealing ultra low-k porous dielectric layer using flowable dielectric film formed from vapor phase dielectric precursor
    Patent number: 10049921
    Abstract: Implementations of the methods and apparatus disclosed herein relate to pore sealing of porous dielectric films using flowable dielectric material. The methods involve exposing a substrate having an exposed porous dielectric film thereon to a vapor phase dielectric precursor under conditions such that a flowable dielectric material selectively deposits in the pores of the porous dielectric material. The pores can be filled with the deposited flowable dielectric material without depositing a continuous film on any exposed metal surface.
    Type: Grant
    Filed: August 20, 2014
    Date of Patent: August 14, 2018
    Assignee: Lam Research Corporation
    Inventors: Nerissa Sue Draeger, Kaihan Abidi Ashtiani, Deenesh Padhi, Derek B. Wong, Bart J. van Schravendijk, George Andrew Antonelli, Artur Kolics, Lie Zhao, Patrick A. van Cleemput
  • FLOWABLE DIELECTRIC FOR SELECTIVE ULTRA LOW-K PORE SEALING
    Publication number: 20160056071
    Abstract: Implementations of the methods and apparatus disclosed herein relate to pore sealing of porous dielectric films using flowable dielectric material. The methods involve exposing a substrate having an exposed porous dielectric film thereon to a vapor phase dielectric precursor under conditions such that a flowable dielectric material selectively deposits in the pores of the porous dielectric material. The pores can be filled with the deposited flowable dielectric material without depositing a continuous film on any exposed metal surface.
    Type: Application
    Filed: August 20, 2014
    Publication date: February 25, 2016
    Inventors: Nerissa Sue Draeger, Kaihan Abidi Ashtiani, Deenesh Padhi, Derek B. Wong, Bart J. van Schravendijk, George Andrew Antonelli, Artur Kolics, Lie Zhao, Patrick A. van Cleemput
  • Low-K oxide deposition by hydrolysis and condensation
    Patent number: 9245739
    Abstract: Methods for depositing flowable dielectric films using halogen-free precursors and catalysts on a substrate are provided herein. Halogen-free precursors and catalysts include self-catalyzing aminosilane compounds and halogen-free organic acids. Flowable films may be used to fill pores in existing dielectric films on substrates having exposed metallization layers. The methods involve hydrolysis and condensation reactions.
    Type: Grant
    Filed: August 20, 2014
    Date of Patent: January 26, 2016
    Assignee: Lam Research Corporation
    Inventors: Nicholas Muga Ndiege, Krishna Nittala, Derek B. Wong, George Andrew Antonelli, Nerissa Sue Draeger, Patrick A. Van Cleemput
  • LOW-K OXIDE DEPOSITION BY HYDROLYSIS AND CONDENSATION
    Publication number: 20150004806
    Abstract: Methods for depositing flowable dielectric films using halogen-free precursors and catalysts on a substrate are provided herein. Halogen-free precursors and catalysts include self-catalyzing aminosilane compounds and halogen-free organic acids. Flowable films may be used to fill pores in existing dielectric films on substrates having exposed metallization layers. The methods involve hydrolysis and condensation reactions.
    Type: Application
    Filed: August 20, 2014
    Publication date: January 1, 2015
    Inventors: Nicholas Muga Ndiege, Krishna Nittala, Derek B. Wong, George Andrew Antonelli, Nerissa Sue Draeger, Patrick A. Van Cleemput