Abstract: In one exemplary embodiment, described herein are innovative techniques for reducing the attractive force between particles and a substrate surface to aid in the removal of particles from the substrate surface. More specifically, a multi-electrode chuck is utilized to assist in cleaning a substrate. The multi-electrode chuck is utilized to reduce the attractive forces between particles and the substrate and to move the loosened particles that are present on the substrate surface. The electrodes of the chuck are biased with alternating current (AC) voltages with a phase shift between the electrode bias waves. The resulting electric field wave on the substrate surface loosens the particles by polarizing the particles and moves the loosened particles across the substrate.

Abstract: Techniques are provided to remove the growth of colloidal silica deposits on surfaces of high aspect ratio structures during silicon nitride etch steps. A high selectivity overetch step is used to remove the deposited colloidal silica. The disclosed techniques include the use of phosphoric acid to remove silicon nitride from structures having silicon nitride formed in narrow gap or trench structures having high aspect ratios in which formation of colloidal silica deposits on a surface of the narrow gap or trench through a hydrolysis reaction occurs. A second etch step is used in which the hydrolysis reaction which formed the colloidal silica deposits is reversible, and with the now lower concentration of silica in the nearby phosphoric acid due to the depletion of the silicon nitride, the equilibrium drives the reaction in the reverse direction, dissolving the deposited silica back into solution.

Abstract: A method of etching a substrate includes providing an etching solution in a tank of an etch processing system, where the etch processing system is configured to control temperature of the etching solution, a concentration of the etching solution, and flow of the etching solution within the tank. The substrate contains micro-fabricated structures that have alternating layers of a first material and a second material, and the etching solution including an acid that etches the first material and results in an etch product to be moved from the substrate. The method further includes monitoring a concentration of the etch product within the etching solution, and maintaining the concentration of the etch product within the etching solution below a predetermined value to prevent deposition of the etch product on the second material in an amount that blocks etching of the first material by the etching solution.

Abstract: In one exemplary embodiment, described herein are innovative techniques for reducing the attractive force between particles and a substrate surface to aid in the removal of particles from the substrate surface. More specifically, a multi-electrode chuck is utilized to assist in cleaning a substrate. The multi-electrode chuck is utilized to reduce the attractive forces between particles and the substrate and to move the loosened particles that are present on the substrate surface. The electrodes of the chuck are biased with alternating current (AC) voltages with a phase shift between the electrode bias waves. The resulting electric field wave on the substrate surface loosens the particles by polarizing the particles and moves the loosened particles across the substrate.

Abstract: A method of etching a substrate includes providing an etching solution in a tank of an etch processing system, where the etch processing system is configured to control temperature of the etching solution, a concentration of the etching solution, and flow of the etching solution within the tank. The substrate contains micro-fabricated structures that have alternating layers of a first material and a second material, and the etching solution including an acid that etches the first material and results in an etch product to be moved from the substrate. The method further includes monitoring a concentration of the etch product within the etching solution, and maintaining the concentration of the etch product within the etching solution below a predetermined value to prevent deposition of the etch product on the second material in an amount that blocks etching of the first material by the etching solution.

Abstract: Techniques are provided to remove the growth of colloidal silica deposits on surfaces of high aspect ratio structures during silicon nitride etch steps. A high selectivity overetch step is used to remove the deposited colloidal silica. The disclosed techniques include the use of phosphoric acid to remove silicon nitride from structures having silicon nitride formed in narrow gap or trench structures having high aspect ratios in which formation of colloidal silica deposits on a surface of the narrow gap or trench through a hydrolysis reaction occurs. A second etch step is used in which the hydrolysis reaction which formed the colloidal silica deposits is reversible, and with the now lower concentration of silica in the nearby phosphoric acid due to the depletion of the silicon nitride, the equilibrium drives the reaction in the reverse direction, dissolving the deposited silica back into solution.

Abstract: A process and apparatus are provided in which substrate drying is accomplished by rapid boiling of the surface liquid to vaporize the liquid before it can cause capillary pattern collapse to occur. More specifically, electromagnetic induction heating is utilized to provide an oscillating magnetic field transverse to the substrate surfaces to induce electrical eddy currents in the substrate that cause the substrate to rapidly heat up. The liquid will then vaporize quickly without causing pattern collapse. Such techniques are particularly useful for IPA drying.

Abstract: Techniques are provided to remove the growth of colloidal silica deposits on surfaces of high aspect ratio structures during silicon nitride etch steps. A high selectivity overetch step is used to remove the deposited colloidal silica. The disclosed techniques include the use of phosphoric acid to remove silicon nitride from structures having silicon nitride formed in narrow gap or trench structures having high aspect ratios in which formation of colloidal silica deposits on a surface of the narrow gap or trench through a hydrolysis reaction occurs. A second etch step is used in which the hydrolysis reaction which formed the colloidal silica deposits is reversible, and with the now lower concentration of silica in the nearby phosphoric acid due to the depletion of the silicon nitride, the equilibrium drives the reaction in the reverse direction, dissolving the deposited silica back into solution.

Abstract: Techniques are provided to remove the growth of colloidal silica deposits on surfaces of high aspect ratio structures during silicon nitride etch steps. A high selectivity overetch step is used to remove the deposited colloidal silica. The disclosed techniques include the use of phosphoric acid to remove silicon nitride from structures having silicon nitride formed in narrow gap or trench structures having high aspect ratios in which formation of colloidal silica deposits on a surface of the narrow gap or trench through a hydrolysis reaction occurs. A second etch step is used in which the hydrolysis reaction which formed the colloidal silica deposits is reversible, and with the now lower concentration of silica in the nearby phosphoric acid due to the depletion of the silicon nitride, the equilibrium drives the reaction in the reverse direction, dissolving the deposited silica back into solution.

Abstract: A molluscicidal composition, comprising: a molluscicidal activity promoting additive comprising a calcium-containing salt of ethylene disuccinic acid or calcium ions and ethylenediamine disuccinic moieties, having at least 1 mole of calcium per mole of ethylenediamine disuccinic acid; and a carrier material edible to molluscs.

Abstract: A molluscicidal composition, comprising: a molluscicidal activity promoting additive comprising a calcium-containing salt of ethylene disuccinic acid or calcium ions and ethylenediamine disuccinic moieties, having at least 1 mole of calcium per mole of ethylenediamine disuccinic acid; and a carrier material edible to molluscs.

Abstract: A molluscicidal composition, comprising: a molluscicide; a molluscicidal activity promoting additive comprising a calcium-containing salt of ethylene disuccinic acid or calcium ions and ethylenediamine disuccinic moieties, having at least 1 mole of calcium per mole of ethylenediamine disuccinic acid; and a carrier material edible to molluscs.

Abstract: A molluscicidal composition, comprising: a molluscicide; a molluscicidal activity promoting additive comprising a calcium-containing salt of ethylene disuccinic acid or calcium ions and ethylenediamine disuccinic moieties, having at least 1 mole of calcium per mole of ethylenediamine disuccinic acid; and a carrier material edible to molluscs.

Abstract: An alkylation process is described. The process comprises reacting at least a first nitrogen compound and a second nitrogen compound with a carbonyl compound in the presence of a reducing agent to form a product comprising at least two nitrogen groups; wherein the carbonyl compound comprises at least two carbonyl groups, the first nitrogen compound comprises a first nitrogen group reactive with one carbonyl group of the carbonyl compound and the second nitrogen compound comprises a second nitrogen group reactive with the other (or another) carbonyl group of the carbonyl compound, and wherein at least the first nitrogen compound or at least the second nitrogen compound comprises at least one other functional group. The process is especially suitable for the preparation of (S,S)-ethylenediaminedisuccinic acid (EDDS) of formula (1).