Abstract: A marker comprising: a retro-reflective layer having a first retro-reflectance capability and a border defining a retro-reflective area of the retro-reflective layer. The retro-reflective layer includes a textured surface, a portion of the textured surface having a surface topology such that surface normal vectors positioned across the portion extend from the portion of the textured surface in different directions. A plurality of retro-reflective micro elements are distributed across the textured surface. A portion of the border provides a second retro-reflectance capability lower than the first retro-reflectance capability.

Abstract: Synthesis of enantiopure cis-?-irone from a renewable carbon source Disclosed herein are natural and synthetic enzymes capable of performing a method of producing cis-?-irone. The method comprises providing an enzyme capable of converting psi-ionone to cis-?-irone; and contacting the enzyme and psi-ionone under suitable conditions to produce cis-?-irone. The enzyme may be a methyltransferase from Streptomyces albireticuli (SaMT), a promiscuous bifunctional methyltransferase/cyclase (pMT1) enzyme from Streptomyces, or a modified pMT1 enzyme with at least one substitution. The enzymes allow the in-vivo and in-vitro production of cis-?-irone including the use of glucose as feedstock for the biotransformation into cis-?-irone.

Abstract: A summary of a conversation may be generated using a neural network and a label space. Conversation turns of the conversation may be processed with a neural network, such as a classifier neural network, to compute label scores for two or more labels. The label scores for the conversation turns may be processed to compute tag scores for tags of the conversation turns. A subset of the tags may be selected using the tag scores where the selected tags represent aspects of the conversation. Text representations of the selected tags may be obtained, and the text representations may be used for generating the conversation summary.

Abstract: A method of forming source/drain features in a FinFET device includes providing a fin formed over a substrate and a gate structure formed over a fin, forming a recess in the fin adjacent to the gate structure, forming a first epitaxial layer in the recess, forming a second epitaxial layer over the first epitaxial layer, and forming a third epitaxial layer over the second epitaxial layer. The second epitaxial layer may be doped with a first element, while one or both of the first and the third epitaxial layer includes a second element different from the first element. One or both of the first and the third epitaxial layer may be formed by a plasma deposition process.

Abstract: A method of forming source/drain features in a FinFET device includes providing a fin formed over a substrate and a gate structure formed over a fin, forming a recess in the fin adjacent to the gate structure, forming a first epitaxial layer in the recess, forming a second epitaxial layer over the first epitaxial layer, and forming a third epitaxial layer over the second epitaxial layer. The second epitaxial layer may be doped with a first element, while one or both of the first and the third epitaxial layer includes a second element different from the first element. One or both of the first and the third epitaxial layer may be formed by a plasma deposition process.

Abstract: A method of treating endothelial dysfunction in a subject can include: identifying damage in an endothelial glycocalyx (EGX) of the subject, and administering to the subject a combination of a nitric oxide (NO) precursor and a hydrogen sulfide (H2S) precursor in an amount and at a frequency sufficient to stabilize and reverse damage in the EGX. A therapeutic composition for treating endothelial dysfunction can include a combination of a nitric oxide (NO) precursor and a hydrogen sulfide (H2S) precursor in an amount sufficient to sustain an increase of bioavailable NO for the treatment of endothelial dysfunction, and a pharmaceutically acceptable carrier.

Abstract: Disclosed herein are systems and methods for estimating an orbit of a satellite using only images captured by an onboard camera of the satellite. One of the disclosed methods includes: capturing a plurality of images using an onboard camera of the satellite; determining the trajectory, loop closure metrics, and the relative geographic position of the satellite using the plurality of images captured by the onboard camera; and estimating the orbit of the satellite based at least on the determined trajectory, loop closure metrics, and the relative geographic position of the satellite.

Abstract: Systems and methods are disclosed for measuring pulsed laser output. An example system comprises a laser configured to emit output in pulses; at least one sensor positioned to sense laser output and configured to convert that output into electrical signals; an edge detector configured to detect at least leading edges of a plurality of laser pulses; an analog to digital converter configured to convert electrical signals from a sensor into digital signals indicative of laser power output; and a controller; wherein, based on the detection of at least the leading edges of the laser pulses, the controller is configured to obtain samples of laser power output during the laser pulses. The system may refrain from sampling laser power output between laser pulses or may sample laser power output between laser pulses at a reduced sample rate. The system may use the samples of laser power output in a feedback loop to automatically adjust laser power.

Abstract: A method of forming source/drain features in a FinFET device includes providing a fin formed over a substrate and a gate structure formed over a fin, forming a recess in the fin adjacent to the gate structure, forming a first epitaxial layer in the recess, forming a second epitaxial layer over the first epitaxial layer, and forming a third epitaxial layer over the second epitaxial layer. The second epitaxial layer may be doped with a first element, while one or both of the first and the third epitaxial layer includes a second element different from the first element. One or both of the first and the third epitaxial layer may be formed by a plasma deposition process.

Abstract: A method of forming source/drain features in a FinFET device includes providing a fin formed over a substrate and a gate structure formed over a fin, forming a recess in the fin adjacent to the gate structure, forming a first epitaxial layer in the recess, forming a second epitaxial layer over the first epitaxial layer, and forming a third epitaxial layer over the second epitaxial layer. The second epitaxial layer may be doped with a first element, while one or both of the first and the third epitaxial layer includes a second element different from the first element. One or both of the first and the third epitaxial layer may be formed by a plasma deposition process.

Abstract: A method of forming source/drain features in a FinFET device includes providing a fin formed over a substrate and a gate structure formed over a fin, forming a recess in the fin adjacent to the gate structure, forming a first epitaxial layer in the recess, forming a second epitaxial layer over the first epitaxial layer, and forming a third epitaxial layer over the second epitaxial layer. The second epitaxial layer may be doped with a first element, while one or both of the first and the third epitaxial layer includes a second element different from the first element. One or both of the first and the third epitaxial layer may be formed by a plasma deposition process.

Abstract: A flash memory device includes a wafer; a gate oxide layer disposed upon the wafer; a floating gate disposed upon the gate oxide layer, the wafer, or a combination thereof; the floating gate including a flat floating gate portion and a generally rectangular floating gate portion disposed upon selected areas of the flat floating gate portion; a high K dielectric material disposed upon the floating gate; and a control gate disposed upon the high K dielectric material; wherein the high K dielectric material forms a zigzag pattern coupling the floating gate with the control gate.

Abstract: Disclosed herein is a flash memory device comprising: a wafer; a gate oxide layer disposed upon the wafer; a floating gate disposed upon the gate oxide layer, the wafer, or a combination thereof; the floating gate comprising a flat floating gate portion and a generally rectangular floating gate portion disposed upon selected areas of the flat floating gate portion; a high K dielectric material disposed upon the floating gate; and a control gate disposed upon the high K dielectric material; wherein the high K dielectric material forms a zigzag pattern coupling the floating gate with the control gate.

Abstract: An apparatus, system, and method for providing an opening solution for drawers and similar enclosure systems that permit no visible external hardware or gripping elements/surfaces that may be easily used irrespective of a size or weight of the drawer or enclosure.

Abstract: A blocking layer is formed on a hard mask having an initial thickness. Lines are fabricated by patterning the blocking layer and the hard mask to provide a line segment, the line segment having a first dimension measured across the line segment; reacting a surface layer of the line segment to form a layer of a reaction product on a remaining portion of the line segment; and removing the reaction product without attacking the remaining portion of the line segment and without attacking the blocking layer and the substrate to form the line segment with a second dimension across the line segment that is smaller than the first dimension. The blocking layer prevents the formation of reaction product on the hard mask so that the initial thickness of the hard mask is maintained. The blocking layer can also serve as an ARC layer for photoresist patterning so that the use of an additional film layer is not required.

Abstract: A blocking layer is formed on a hard mask having an initial thickness. Lines are fabricated by patterning the blocking layer and the hard mask to provide a line segment, the line segment having a first dimension measured across the line segment; reacting a surface layer of the line segment to form a layer of a reaction product on a remaining portion of the line segment; and removing the reaction product without attacking the remaining portion of the line segment and without attacking the blocking layer and the substrate to form the line segment with a second dimension across the line segment that is smaller than the first dimension. The blocking layer prevents the formation of reaction product on the hard mask so that the initial thickness of the hard mask is maintained. The blocking layer can also serve as an ARC layer for photoresist patterning so that the use of an additional film layer is not required.

Abstract: A tool storage unit includes left and right walls, and a bottom wall. A left protrusion projects from an upper segment of the left wall toward the right wall for urging a front end wall of a socket. A right protrusion projects from an intermediate segment of the right wall toward the left wall for abutting against a central depressed area in a rear end wall of the socket. A plurality of the tool storage units are interconnected in a row for storing a plurality of sockets, in which the left protrusions on the left walls of the tool storage units are formed as a continuous projection that extends across the left walls.

Abstract: A tool storage unit includes left and right walls, and a bottom wall. A left protrusion projects from an upper segment of the left wall toward the right wall for urging a front end wall of a socket. A right protrusion projects from an intermediate segment of the right wall toward the left wall for abutting against a central depressed area in a rear end wall of the socket. A plurality of the tool storage units are interconnected in a row for storing a plurality of sockets, in which the left protrusions on the left walls of the tool storage units are formed as a continuous projection that extends across the left walls.

Abstract: A high-speed cleaning system and method in which a liquid is injected by-compressed air into the vacuumed chambers in the automotive cooling systems, in water-cooled engines. The liquid is injected in short period time under pressure, and the cooling system is pre-evacuated and held at a vacuum so that there is no flow restriction to build up high pressure in the cooling system in the short period of time the liquid is injected in the cooling system, and the liquid travels through the cooling system at a high rate of speed. High pressure air is mixed with the liquid before it is injected into engine cooling system, where the liquid/air mixture travels at a high rate of speed creating a hurricane type effect that breaking loose contaminants such as dirt, rust, and other particles and washes them out of the engine cooling system.