Patents by Inventor Derek Chen

Derek Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240150448
    Abstract: The present invention relates to neutralizing antibodies of the human pituitary adenylate cyclase activating polypeptide type I receptor (PAC1) and pharmaceutical compositions comprising such antibodies. Methods of treating or preventing headache conditions, such as migraine and cluster headache, using the neutralizing antibodies are also described.
    Type: Application
    Filed: December 19, 2023
    Publication date: May 9, 2024
    Applicant: AMGEN INC.
    Inventors: Neeraj Jagdish AGRAWAL, Irwin CHEN, Su CHONG, Bryna FUCHSLOCHER, Kevin GRAHAM, Agnes Eva HAMBURGER, Mark Leo MICHAELS, Christopher MOHR, Derek E. PIPER, Kenneth William WALKER, Zhulun WANG, Cen XU
  • Patent number: 11976800
    Abstract: A vehicle lighting assembly includes a light housing, a lens, a light source within a cavity provided by the light housing and the lens, and a light blade projecting from the lens outside the cavity. A vehicle lighting method includes emitting light from a light source that is inside a cavity provided by a light housing and a lens, and directing the light through a light blade that is outside the cavity.
    Type: Grant
    Filed: February 2, 2023
    Date of Patent: May 7, 2024
    Assignee: Ford Global Technologies, LLC
    Inventors: Mark Kaski, Omar Benjamin Lara Monarrez, Derek English, Brandon Schwandt, Linsheng Chen, Dean Carbis, Robert Todd Laster
  • Patent number: 11960173
    Abstract: A switchable panel is described that includes exterior layers, a switchable component disposed between the exterior layers, a lamination frame extending from outer edges of the switchable component to outer edges of the panel between the exterior layers, and spacers embedded within the lamination frame. The spacers are configured to prohibit the exterior layers from moving toward each other at the outer edges of the panel when a central portion of the panel experiences tension.
    Type: Grant
    Filed: February 18, 2022
    Date of Patent: April 16, 2024
    Assignee: APPLE INC.
    Inventors: Peter F. Masschelein, Yuan Chen, Derek C. Scott
  • Patent number: 11952420
    Abstract: Provided herein are antibodies, or antigen-binding portions thereof, that specifically bind and inhibit TREM-1 signaling, wherein the antibodies do not bind to one or more Fc?Rs and do not induce the myeloid cells to produce inflammatory cytokines. Also provided are uses of such antibodies, or antigen-binding portions thereof, in therapeutic applications, such as treatment of autoimmune diseases.
    Type: Grant
    Filed: September 10, 2021
    Date of Patent: April 9, 2024
    Assignee: BRISTOL-MYERS SQUIBB COMPANY
    Inventors: Achal Pashine, Michael L Gosselin, Aaron P. Yamniuk, Derek A. Holmes, Guodong Chen, Priyanka Apurva Madia, Richard Yu-Cheng Huang, Stephen Michael Carl
  • Patent number: 11933471
    Abstract: A vehicle lighting assembly includes a primary lens and a light source on a first side of the primary lens. The light source is configured to emit light through the primary lens. A light blade is on an opposite, second side of the primary lens. A secondary lens covers a portion of the light blade. A vehicle lighting method includes emitting light from a light source, directing the light through a primary lens, directing the light from the primary lens through a light blade, and directing the light from the light blade through a secondary lens.
    Type: Grant
    Filed: February 2, 2023
    Date of Patent: March 19, 2024
    Assignee: Ford Global Technologies, LLC
    Inventors: Omar Benjamin Lara Monarrez, Mark Kaski, Derek English, Dean Carbis, Robert Todd Laster, Brandon Schwandt, Linsheng Chen
  • Patent number: 11919954
    Abstract: Provided herein are antibodies, or antigen-binding portions thereof, that specifically bind and inhibit TREM-1 signaling, wherein the antibodies do not bind to one or more Fc?Rs and do not induce the myeloid cells to produce inflammatory cytokines. Also provided are uses of such antibodies, or antigen-binding portions thereof, in therapeutic applications, such as treatment of autoimmune diseases.
    Type: Grant
    Filed: September 10, 2021
    Date of Patent: March 5, 2024
    Assignee: BRISTOL-MYERS SQUIBB COMPANY
    Inventors: Achal Pashine, Michael L. Gosselin, Aaron P. Yamniuk, Derek A. Holmes, Guodong Chen, Priyanka Apurva Madia, Richard Yu-Cheng Huang, Stephen Michael Carl
  • Patent number: 11921788
    Abstract: A system level search module receives system level search user interface registration information for an application of the computing device. The registration information includes an indication of how the system level search module can launch the application. The registration information is added to a registration store, and the application is included as one of one or more applications that can be searched using the system level search user interface.
    Type: Grant
    Filed: November 29, 2022
    Date of Patent: March 5, 2024
    Assignee: Microsoft Technology Licensing, LLC
    Inventors: Priya Vaidyanathan, Brian E. Uphoff, Brandon H. Paddock, Stephanie M. Monk, Dona Sarkar, Wentao Chen, Edward Boyle Averett, Manav Mishra, Derek S. Gebhard, Richard Jacob White, Yin Liu
  • Publication number: 20240068710
    Abstract: The present disclosure is directed to systems and methods for automatically shutting off fluid flow through a fluid inlet line of a water heater upon detection of a leak of the water heater. The system may include an electrically powered shutoff assembly operatively coupled to the fluid inlet line, and a capacitor operatively coupled to the electrically powered shutoff assembly. The electrically powered shutoff assembly may be configured to shut off fluid flow through the fluid inlet line upon detection of a leak of the water heater, and the capacitor may be configured to store power received from an external power source. Accordingly, when the electrically powered shutoff assembly does not have access to electric power, the capacitor may power the electrically powered shutoff assembly to shut off fluid flow through the fluid inlet line.
    Type: Application
    Filed: August 30, 2023
    Publication date: February 29, 2024
    Inventors: Harsha Satyanarayana, Sarah N. Tomasco, Christopher Mark Hayden, David Isai Vega Fernandez, Saman Beyhaghi, Derek Ryan Bindbeutel, Tony Chen
  • Publication number: 20230297605
    Abstract: A summary of a conversation may be generated using a neural network and a label space. Conversation turns of the conversation may be processed with a neural network, such as a classifier neural network, to compute label scores for two or more labels. The label scores for the conversation turns may be processed to compute tag scores for tags of the conversation turns. A subset of the tags may be selected using the tag scores where the selected tags represent aspects of the conversation. Text representations of the selected tags may be obtained, and the text representations may be used for generating the conversation summary.
    Type: Application
    Filed: March 16, 2022
    Publication date: September 21, 2023
    Inventors: Xinyuan Zhang, Derek Chen, Yi Yang
  • Publication number: 20230058699
    Abstract: A method of forming source/drain features in a FinFET device includes providing a fin formed over a substrate and a gate structure formed over a fin, forming a recess in the fin adjacent to the gate structure, forming a first epitaxial layer in the recess, forming a second epitaxial layer over the first epitaxial layer, and forming a third epitaxial layer over the second epitaxial layer. The second epitaxial layer may be doped with a first element, while one or both of the first and the third epitaxial layer includes a second element different from the first element. One or both of the first and the third epitaxial layer may be formed by a plasma deposition process.
    Type: Application
    Filed: November 7, 2022
    Publication date: February 23, 2023
    Inventors: Chia-Ling Chan, Derek Chen, Liang-Yin Chen, Chien-I Kuo
  • Patent number: 11495674
    Abstract: A method of forming source/drain features in a FinFET device includes providing a fin formed over a substrate and a gate structure formed over a fin, forming a recess in the fin adjacent to the gate structure, forming a first epitaxial layer in the recess, forming a second epitaxial layer over the first epitaxial layer, and forming a third epitaxial layer over the second epitaxial layer. The second epitaxial layer may be doped with a first element, while one or both of the first and the third epitaxial layer includes a second element different from the first element. One or both of the first and the third epitaxial layer may be formed by a plasma deposition process.
    Type: Grant
    Filed: December 23, 2019
    Date of Patent: November 8, 2022
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chia-Ling Chan, Derek Chen, Liang-Yin Chen, Chien-I Kuo
  • Publication number: 20220331353
    Abstract: A method of treating endothelial dysfunction in a subject can include: identifying damage in an endothelial glycocalyx (EGX) of the subject, and administering to the subject a combination of a nitric oxide (NO) precursor and a hydrogen sulfide (H2S) precursor in an amount and at a frequency sufficient to stabilize and reverse damage in the EGX. A therapeutic composition for treating endothelial dysfunction can include a combination of a nitric oxide (NO) precursor and a hydrogen sulfide (H2S) precursor in an amount sufficient to sustain an increase of bioavailable NO for the treatment of endothelial dysfunction, and a pharmaceutically acceptable carrier.
    Type: Application
    Filed: May 2, 2022
    Publication date: October 20, 2022
    Inventors: Chen Chen, Edward Hoyt, Kevin Chen, Derek Chen
  • Publication number: 20220017239
    Abstract: Disclosed herein are systems and methods for estimating an orbit of a satellite using only images captured by an onboard camera of the satellite. One of the disclosed methods includes: capturing a plurality of images using an onboard camera of the satellite; determining the trajectory, loop closure metrics, and the relative geographic position of the satellite using the plurality of images captured by the onboard camera; and estimating the orbit of the satellite based at least on the determined trajectory, loop closure metrics, and the relative geographic position of the satellite.
    Type: Application
    Filed: July 17, 2020
    Publication date: January 20, 2022
    Inventor: Derek Chen
  • Publication number: 20210135424
    Abstract: Systems and methods are disclosed for measuring pulsed laser output. An example system comprises a laser configured to emit output in pulses; at least one sensor positioned to sense laser output and configured to convert that output into electrical signals; an edge detector configured to detect at least leading edges of a plurality of laser pulses; an analog to digital converter configured to convert electrical signals from a sensor into digital signals indicative of laser power output; and a controller; wherein, based on the detection of at least the leading edges of the laser pulses, the controller is configured to obtain samples of laser power output during the laser pulses. The system may refrain from sampling laser power output between laser pulses or may sample laser power output between laser pulses at a reduced sample rate. The system may use the samples of laser power output in a feedback loop to automatically adjust laser power.
    Type: Application
    Filed: October 29, 2020
    Publication date: May 6, 2021
    Inventors: Gerald David Bacher, Derek Chen, Conrad Sawicz, Dan Teodorescu
  • Publication number: 20200135894
    Abstract: A method of forming source/drain features in a FinFET device includes providing a fin formed over a substrate and a gate structure formed over a fin, forming a recess in the fin adjacent to the gate structure, forming a first epitaxial layer in the recess, forming a second epitaxial layer over the first epitaxial layer, and forming a third epitaxial layer over the second epitaxial layer. The second epitaxial layer may be doped with a first element, while one or both of the first and the third epitaxial layer includes a second element different from the first element. One or both of the first and the third epitaxial layer may be formed by a plasma deposition process.
    Type: Application
    Filed: December 23, 2019
    Publication date: April 30, 2020
    Inventors: Chia-Ling Chan, Derek Chen, Liang-Yin Chen, Chien-I Kuo
  • Patent number: 10522656
    Abstract: A method of forming source/drain features in a FinFET device includes providing a fin formed over a substrate and a gate structure formed over a fin, forming a recess in the fin adjacent to the gate structure, forming a first epitaxial layer in the recess, forming a second epitaxial layer over the first epitaxial layer, and forming a third epitaxial layer over the second epitaxial layer. The second epitaxial layer may be doped with a first element, while one or both of the first and the third epitaxial layer includes a second element different from the first element. One or both of the first and the third epitaxial layer may be formed by a plasma deposition process.
    Type: Grant
    Filed: February 28, 2018
    Date of Patent: December 31, 2019
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD
    Inventors: Chia-Ling Chan, Derek Chen, Liang-Yin Chen, Chien-I Kuo
  • Publication number: 20190267471
    Abstract: A method of forming source/drain features in a FinFET device includes providing a fin formed over a substrate and a gate structure formed over a fin, forming a recess in the fin adjacent to the gate structure, forming a first epitaxial layer in the recess, forming a second epitaxial layer over the first epitaxial layer, and forming a third epitaxial layer over the second epitaxial layer. The second epitaxial layer may be doped with a first element, while one or both of the first and the third epitaxial layer includes a second element different from the first element. One or both of the first and the third epitaxial layer may be formed by a plasma deposition process.
    Type: Application
    Filed: February 28, 2018
    Publication date: August 29, 2019
    Inventors: Chia-Ling Chan, Derek Chen, Liang-Yin Chen, Chien-I Kuo
  • Patent number: 8283716
    Abstract: A flash memory device includes a wafer; a gate oxide layer disposed upon the wafer; a floating gate disposed upon the gate oxide layer, the wafer, or a combination thereof; the floating gate including a flat floating gate portion and a generally rectangular floating gate portion disposed upon selected areas of the flat floating gate portion; a high K dielectric material disposed upon the floating gate; and a control gate disposed upon the high K dielectric material; wherein the high K dielectric material forms a zigzag pattern coupling the floating gate with the control gate.
    Type: Grant
    Filed: January 18, 2010
    Date of Patent: October 9, 2012
    Assignee: International Business Machines Corporation
    Inventors: Derek Chen, Huilong Zhu
  • Publication number: 20100187592
    Abstract: Disclosed herein is a flash memory device comprising: a wafer; a gate oxide layer disposed upon the wafer; a floating gate disposed upon the gate oxide layer, the wafer, or a combination thereof; the floating gate comprising a flat floating gate portion and a generally rectangular floating gate portion disposed upon selected areas of the flat floating gate portion; a high K dielectric material disposed upon the floating gate; and a control gate disposed upon the high K dielectric material; wherein the high K dielectric material forms a zigzag pattern coupling the floating gate with the control gate.
    Type: Application
    Filed: January 18, 2010
    Publication date: July 29, 2010
    Applicant: International Business Machines Corporation
    Inventors: Derek Chen, Huilong Zhu
  • Patent number: D1016060
    Type: Grant
    Filed: September 2, 2022
    Date of Patent: February 27, 2024
    Assignee: META PLATFORMS TECHNOLOGIES, LLC
    Inventors: Chunli Chen, Derek William Wright, Peter Wesley Bristol