Patents by Inventor Derek D. Lovingood

Derek D. Lovingood has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • ION etching of growing InP nanocrystals using microwave
    Patent number: 8663491
    Abstract: High quantum yield InP nanocrystals are used in the bio-technology, bio-medical, and photovoltaic, specifically IV, III-V and III-VI nanocrystal technological applications. InP nanocrystals typically require post-generation HF treatment. Combining microwave methodologies with the presence of a fluorinated ionic liquid allows Fluorine ion etching without the hazards accompanying HF. Growing the InP nanocrystals in the presence of the ionic liquid allows in-situ etching to be achieved. The optimization of the PL QY is achieved by balancing growth and etching rates in the reaction.
    Type: Grant
    Filed: October 5, 2012
    Date of Patent: March 4, 2014
    Assignee: The Florida State University Research Foundation, Inc.
    Inventors: Geoffrey F. Strouse, Derek D. Lovingood
  • Ion etching of growing InP nanocrystals using microwave
    Patent number: 8540892
    Abstract: High quantum yield InP nanocrystals are used in the bio-technology, bio-medical, and photovoltaic, specifically IV, III-V and III-VI nanocrystal technological applications. InP nanocrystals typically require post-generation HF treatment. Combining microwave methodologies with the presence of a fluorinated ionic liquid allows Fluorine ion etching without the hazards accompanying HF. Growing the InP nanocrystals in the presence of the ionic liquid allows in-situ etching to be achieved. The optimization of the PL QY is achieved by balancing growth and etching rates in the reaction.
    Type: Grant
    Filed: October 5, 2012
    Date of Patent: September 24, 2013
    Assignee: The Florida State University Research Foundation, Inc.
    Inventors: Geoffrey F. Strouse, Derek D. Lovingood
  • Ion etching of growing InP nanocrystals using microwave
    Patent number: 8496844
    Abstract: High quantum yield InP nanocrystals are used in the bio-technology, bio-medical, and photovoltaic, specifically IV, III-V and III-VI nanocrystal technological applications. InP nanocrystals typically require post-generation HF treatment. Combining microwave methodologies with the presence of a fluorinated ionic liquid allows Fluorine ion etching without the hazards accompanying HF. Growing the InP nanocrystals in the presence of the ionic liquid allows in-situ etching to be achieved. The optimization of the PL QY is achieved by balancing growth and etching rates in the reaction.
    Type: Grant
    Filed: October 5, 2012
    Date of Patent: July 30, 2013
    Assignee: The Florida State University Research Foundation, Inc.
    Inventors: Geoffrey F. Strouse, Derek D. Lovingood
  • Ion etching of growing InP nanocrystals using microwave
    Patent number: 8435418
    Abstract: High quantum yield InP nanocrystals are used in the bio-technology, bio-medical, and photovoltaic, specifically IV, III-V and III-VI nanocrystal technological applications. InP nanocrystals typically require post-generation HF treatment. Combining microwave methodologies with the presence of a fluorinated ionic liquid allows Fluorine ion etching without the hazards accompanying HF. Growing the InP nanocrystals in the presence of the ionic liquid allows in-situ etching to be achieved. The optimization of the PL QY is achieved by balancing growth and etching rates in the reaction.
    Type: Grant
    Filed: October 5, 2012
    Date of Patent: May 7, 2013
    Assignee: The Florida State University Research Foundation, Inc.
    Inventors: Geoffrey F. Strouse, Derek D. Lovingood
  • Ion etching of growing InP nanocrystals using microwave
    Patent number: 8357308
    Abstract: High quantum yield InP nanocrystals are used in the bio-technology, bio-medical, and photovoltaic, specifically IV, III-V and III-VI nanocrystal technological applications. InP nanocrystals typically require post-generation HF treatment. Combining microwave methodologies with the presence of a fluorinated ionic liquid allows Fluorine ion etching without the hazards accompanying HF. Growing the InP nanocrystals in the presence of the ionic liquid allows in-situ etching to be achieved. The optimization of the PL QY is achieved by balancing growth and etching rates in the reaction.
    Type: Grant
    Filed: August 29, 2008
    Date of Patent: January 22, 2013
    Assignee: Florida State University Research Foundation, Inc.
    Inventors: Geoffrey F. Strouse, Derek D. Lovingood