Abstract: In the present disclosure, a semiconductor structure includes an Mx-1 layer including a first dielectric layer and first metal features, wherein the first metal features include a first set of first metal features in a first region and a second set of first metal features in a second region, wherein the first set has a first pattern density and the second set has a second pattern density being greater than the first pattern density. The structure further includes a Vx layer disposed over the Mx-1 layer, the Vx layer including first vias contacting the first set of the first metal features. The structure further includes an Mx layer disposed over the Vx layer, the Mx layer including a fuse element, wherein the fuse element has a first thickness in the first region less than a second thickness in the second region.

Abstract: In the present disclosure, a semiconductor structure includes an Mx-1 layer including a first dielectric layer and first metal features, wherein the first metal features include a first set of first metal features in a first region and a second set of first metal features in a second region, wherein the first set has a first pattern density and the second set has a second pattern density being greater than the first pattern density. The structure further includes a Vx layer disposed over the Mx-1 layer, the Vx layer including first vias contacting the first set of the first metal features. The structure further includes an Mx layer disposed over the Vx layer, the Mx layer including a fuse element, wherein the fuse element has a first thickness in the first region less than a second thickness in the second region.

Abstract: In the present disclosure, a semiconductor structure includes an Mx-1 layer including a first dielectric layer and first metal features, wherein the first metal features include a first set of first metal features in a first region and a second set of first metal features in a second region, wherein the first set has a first pattern density and the second set has a second pattern density being greater than the first pattern density. The structure further includes a Vx layer disposed over the Mx-1 layer, the Vx layer including first vias contacting the first set of the first metal features. The structure further includes an Mx layer disposed over the Vx layer, the Mx layer including a fuse element, wherein the fuse element has a first thickness in the first region less than a second thickness in the second region.

Abstract: In the present disclosure, a semiconductor structure includes an Mx-1 layer including a first dielectric layer and first metal features, wherein the first metal features include a first set of first metal features in a first region and a second set of first metal features in a second region, wherein the first set has a first pattern density and the second set has a second pattern density being greater than the first pattern density. The structure further includes a Vx layer disposed over the Mx-1 layer, the Vx layer including first vias contacting the first set of the first metal features. The structure further includes an Mx layer disposed over the Vx layer, the Mx layer including a fuse element, wherein the fuse element has a first thickness in the first region less than a second thickness in the second region.

Abstract: A specialized boot path for speeding up resume from a sleep state is discussed. In a UEFI-compliant system, a specially constructed alternate firmware volume is created which contains only the code modules used during resumption from an S3 sleep state. This alternate firmware volume is copied into Random Access Memory (RAM) during a normal boot. When the system subsequently enters the S3 sleep state and then begins the resume boot process, code in the boot sequence detects it is a resume from an S3 sleep state, restores a RAM configuration and jumps execution to a Pre-EFI Initialization (PEI) core entry point in the alternate firmware volume in RAM instead of to a firmware volume in ROM. This alternate firmware volume performs specified S3 resume tasks and then returns control to the operating system.

Abstract: A specialized boot path for speeding up resume from a sleep state is discussed. In a UEFI-compliant system, a specially constructed alternate firmware volume is created which contains only the code modules used during resumption from an S3 sleep state. This alternate firmware volume is copied into Random Access Memory (RAM) during a normal boot. When the system subsequently enters the S3 sleep state and then begins the resume boot process, code in the boot sequence detects it is a resume from an S3 sleep state, restores a RAM configuration and jumps execution to a Pre-EFI Initialization (PEI) core entry point in the alternate firmware volume in RAM instead of to a firmware volume in ROM. This alternate firmware volume performs specified S3 resume tasks and then returns control to the operating system.