Abstract: Dry pumps are used to pump a variety of gas mixtures from the semiconductor industry. The present invention provides a liquid ring pump located between the dry pump and an abatement device to remove soluble corrosive materials prior to the exhaust gases entry to the abatement device, the work fluid exhausted from the liquid ring pump being separated from the gas prior to entry to the abatement device.

Abstract: Dry pumps are used to pump a variety of gas mixtures from the semiconductor industry. The present invention provides a liquid ring pump located between the dry pump and an abatement device to remove soluble corrosive materials prior to the exhaust gases entry to the abatement device, the work fluid exhausted from the liquid ring pump being separated from the gas prior to entry to the abatement device.

Abstract: A method is described for treating gas exhaust from a polysilicon etch process, which uses a plasma abatement device to treat the gas. The device comprises a stainless steel gas chamber having a gas inlet for receiving the gas and a gas outlet. As the gas may contain a halocompound and water vapor, the chamber is heated to a temperature that inhibits adsorption of water on the surface within the chamber, thereby inhibiting corrosion of the gas chamber. The gas is then conveyed to the gas chamber for treatment, and the temperature of the chamber is maintained above said temperature during treatment of the gas.

Abstract: A method of measuring the concentration of a halogen in a gas stream using measurement means unsuitable for the direct measurement of halogens in a gas stream includes the step of passing a gaseous conversion compound to the halogen containing gas stream to convert the halogen to a detectable gaseous compound.

Abstract: A method is described for treating gas exhaust from a polysilicon etch process, which uses a plasma abatement device to treat the gas. The device comprises a stainless steel gas chamber having a gas inlet for receiving the gas and a gas outlet. As the gas may contain a halocompound and water vapour, the chamber is heated to a temperature that inhibits adsorption of water on the surface within the chamber, thereby inhibiting corrosion of the gas chamber. The gas is then conveyed to the gas chamber for treatment, and the temperature of the chamber is maintained above said temperature during treatment of the gas.

Abstract: A method of measuring the concentration of a halogen in a gas stream using measurement means unsuitable for the direct measurement of halogens in a gas stream, comprising the step of passing a gaseous conversion compound to the halogen containing gas stream to convert the halogen to a detectable gaseous compound.

Abstract: A method for scrubbing a halogen-containing gas, comprises contacting the halogen-containing gas with water at a temperature of at least 30° C., the gas optionally subsequently being subjected to a further treatment step comprising contacting it with water at a temperature of less than 30° C. and/or a gas dilution step. An apparatus for carrying out the method comprises a hot wash chamber (6) and optionally a cold wash chamber (7) and/or a gas dilution device (13).

Abstract: A process for the abatement of trimethylvinylsilane (TMVS) by contacting a gas stream containing TMVS with copper(II) oxide (CuO) and/or manganese oxide (MnO2) in the presence of sufficient oxygen to prevent reduction of the oxides and at a temperature of at least room temperature, but preferably, at an elevated temperature greater than 100° C.