Abstract: Device topologies for monolithic electro-photonic integrated circuits comprising optical transmitters and receivers are disclosed, wherein each transmitter comprises a first electro-absorption modulator (EAM) waveguide and EAM driver electronics and each receiver comprises a waveguide photodiode, which may be a second EAM waveguide, and a transimpedance amplifier (TIA); and an optical input port for coupling an external laser to each of the transmitters, or an on-chip laser. Monolithic integration of photonics and electronics on a single chip with compact form factor provides reduced interconnect path lengths between the EAMs and the electronics compared to discrete electronics. Tx optical output ports and Rx optical input ports may be interleaved, or banked, along a first (beachfront) edge of the chip with a port-to-port spacing of ?350 ?m.

Abstract: Several embodiments are described for induced electric field or E-field poling of QPM nonlinear crystal materials, such as LiNbO.sub.3, LiTaO.sub.3 and KTP, utilizing approaches which, for the most part, avoid the necessity of depositing or otherwise forming a series of spatially disposed conductive electrodes on one surface of the nonlinear crystal material. E-field poling is accomplished by applying a high voltage electric field in excess, for example, in the range of several kilovolts per cm to several 100 kilovolts per centimeter, at room temperature to provide inverted domains in a pattern of continuously alternating domains corresponding to the regions formed on the first z surface of the crystal. The employment of single, planar-applied liquid electrodes is preferred eliminating any necessity of forming and removing previously formed metal electrodes in the poling process.