Abstract: A distributed key management system (KMS) includes a central KMS server and multiple intermediate KMS servers. The central KMS server replicates managed keys to the intermediate KMS servers. An intermediate KMS server receives a KMS service request from a KMS client, where any of the intermediate KMS servers are capable of servicing the request. The intermediate KMS server performs the action requested if it has access to the necessary managed key and returns the response to the KMS client. If it does not have access to the necessary managed key, the intermediate KMS server transmits a request for the managed key to the central KMS server. The intermediate KMS server receives the managed key, performs the action requested, and returns the response to the KMS client.

Abstract: Provided are handling systems and methods for sample processing. The systems can include a sample container and a probe. A system can be convertible between a loading state in which a user loads sample into the sample container, a sampling state in which relative motion between the sample container and the probe places the probe and sample container into fluid communication with one another so that the probe can aspirate sample from the sample container, and a washing state in which rinse fluid is expressed through the probe so as to remove unwanted material from within the probe, with the rinse fluid being collected by a wash manifold.

Abstract: Provided are optical fiber alignment assemblies, comprising: a plurality of fiber channel members being arranged along a first vertical axis, each fiber channel member comprising a fiber channel configured to accommodate an optical fiber disposed therein, the plurality of fiber channels being parallel to one another, fiber channels adjacent to one another defining a spacing therebetween, the spacing being measured along the first vertical axis; a plurality of resilient members, a resilient member being disposed between adjacent fiber channel members; and an adjustment element, the adjustment element being configured to effect a force oriented along the first vertical axis, and the adjustment member being configured such that actuation of the adjustment member changes a compression of the plurality of resilient members so as to effect an essentially linear variation in the spacing between adjacent fiber channels. Also provided are related methods.

Abstract: A method and apparatus for forming aerosol cans for metered dose inhalers.

Abstract: A method and apparatus for forming aerosol cans for metered dose inhalers.

Abstract: A method of forming a rectifying diode. The method comprises providing a first semiconductor region of a first conductivity type and having a first dopant concentration and forming a second semiconductor region in the first semiconductor region. The second semiconductor region has the first conductivity type and having a second dopant concentration greater than the first dopant concentration. The method also comprises forming a conductive contact to the first semiconductor region and forming a conductive contact to the second semiconductor region. The rectifying diode comprises a current path, and the path comprises: (i) the conductive contact to the first semiconductor region; (ii) the first semiconductor region; (iii) the second semiconductor region; and (iv) the conductive contact to the second semiconductor region. The second semiconductor region does not extend to a layer buried relative to the first semiconductor region.

Abstract: An integrated circuit includes a first thin film resistor on a first dielectric layer. A first layer of interconnect conductors on the first dielectric layer includes a first and second interconnect conductors electrically contacting the first thin film resistor. A second dielectric layer is formed on the first dielectric layer. A second thin film resistor is formed on the second dielectric layer. A third dielectric layer is formed on the second dielectric layer. A second layer of interconnect conductors on the third dielectric layer includes a third interconnect conductor extending through an opening in the second and third dielectric layers to contact the first interconnect conductor, a fourth interconnect conductor extending through an opening in the second and third dielectric layers to contact the second interconnect conductor, and two interconnect conductors extending through openings in the third dielectric layer of the second thin film resistor.

Abstract: An integrated circuit structure includes a first dielectric layer disposed on a semiconductor layer, a first thin film resistor disposed on the first dielectric layer, a second dielectric layer disposed on the first dielectric layer and the first thin film resistor, and a second thin film resistor disposed on the second dielectric layer. A first layer of interconnect conductors is disposed on the second dielectric layer and includes a first interconnect conductor contacting a first contact area of the first thin film resistor, a second interconnect conductor contacting a second contact area of the first thin film resistor, and a third interconnect conductor electrically contacting a first contact area of the second thin film resistor. A third dielectric layer is disposed on the second dielectric layer. A second layer of interconnect conductors is disposed on the third dielectric layer including a fourth interconnect conductor for contacting the second interconnect conductor.

Abstract: A rectifying diode. The diode comprises a first conductor region and a second conductor region. The diode further comprises a diode conductive path between the first conductor region and the second conductor region. The path comprises a first semiconductor volume having a non-uniform distribution of ions and a second semiconductor volume having a uniform distribution of ions relative to the first semiconductor volume.

Abstract: A method of forming a rectifying diode. The method comprises providing a first semiconductor region of a first conductivity type and having a first dopant concentration and forming a second semiconductor region in the first semiconductor region. The second semiconductor region has the first conductivity type and having a second dopant concentration greater than the first dopant concentration. The method also comprises forming a conductive contact to the first semiconductor region and forming a conductive contact to the second semiconductor region. The rectifying diode comprises a current path, and the path comprises: (i) the conductive contact to the first semiconductor region; (ii) the first semiconductor region; (iii) the second semiconductor region; and (iv) the conductive contact to the second semiconductor region. The second semiconductor region does not extend to a layer buried relative to the first semiconductor region.

Abstract: An unguarded Schottky barrier diode structure, which may be part of an integrated device, is provided that blocks the formation of a parasitic MIS diode at the diode's perimeter. The diode is formed in a semiconductive material which may comprise silicon. The portion of the semiconductive material at which the diode is formed may be called a diode portion of the semiconductive material. A highly conductive buried layer is provided under the diode portion of the semiconductive material. The highly conductive buried layer may comprise TiW, Ti, or TiN. The highly conductive buried layer extends laterally to a conductive plug extending to an upper conductive layer of the integrated or other device. A laterally extended silicide region is provided, which extends laterally to a perimeter. The silicide region comprises a lower semiconductor contact area on top of and in contact with the semiconductive material. The lower semiconductor contact area extends laterally to the perimeter.

Abstract: The present invention relates to recombinant DNA which encodes the Tth111II restriction endonuclease-methylase fusion protein (Tth111IIRM), expression of Tth111II restriction endonuclease-methylase fusion protein in E. coli cells containing the recombinant DNA, and purification of Tth111II endonuclease-methylase fusion protein to near homogeneity.

Abstract: The present invention relates to recombinant DNA which encodes the Tth111II restriction endonuclease-methylase fusion protein (Tth111IIRM), expression of Tth111II restriction endonuclease-methylase fusion protein in E. coli cells containing the recombinant DNA, and purification of Tth111II endonuclease-methylase fusion protein to near homogeneity.

Abstract: The present invention provides a novel type II restriction endonuclease obtainable from Arthrobacter protophormiae. The endonuclease known as Apo I, recognizes the following nucleotide sequence and has a cleavage point indicated by the arrows: ##STR1## Also described is a process for obtaining Apo I from Arthrobacter protophormiae.

Abstract: A heat pipe stablized specimen container for irradiation of specimens at substantially constant temperature within a liquid metal cooled fast reactor comprises a heat pipe containing a vaporizable substance such as sodium. The container is of double-walled construction with the gap filled with argon and at top of the container a volume of argon is trapped within a cavity of the liquid metal level within the container in such a way that retention of argon in this zone is not dependent on sealing welds in the structure of the container, the argon blanket in this zone affording thermal insulation at the top of the container and also around part of the heat pipe, viz an adiabatic section of the latter.

Abstract: An optical article, for example, a lens, window or mirror, at least part of the surface of which, and preferably the whole of which, is an inorganic oxide glass having a P.sub.2 O.sub.5 content of at least 52 mole %, and preferably 55 to 68.5 mole %, an alkaline earth content of 2.7 to 20 mole %, and a transformation temperature of not greater than 300.degree. C, the glass optionally containing B.sub.2 O.sub.3 and at least one alkali metal oxide.

Abstract: Phosphate glasses containing minor amounts of the oxides of chromium, molybdenum and tungsten (Group VIb) have improved water resistance and low softening points. Suitable compositions are within the range (moles percent)P.sub.2 o.sub.5 50-75Group VIb oxides 0.1-10, comprising singly or in combination CrO.sub.3 up to 2.6, MoO.sub.3 up to 7, WO.sub.3 up to 7At least one oxide selected from alkali metal oxides and alkaline earths 15- 49.9Addition of oxidizing agents (e.g. sodium nitrate) to the melt may be used to keep the Group VIb metals in the hexavalent state.

Abstract: Inorganic oxide glasses having compositions within the range (in moles percent) B.sub.2 O.sub.3 1.2-3.5, P.sub.2 O.sub.5 50-72, PbO 0-30, transition metal oxides 0-5, the remainder being oxides selected from alkali metal oxides, alkaline earths and zinc oxide.