Abstract: Arrays of resonator sensors include an active wafer array comprising a plurality of active wafers, a first end cap array coupled to a first side of the active wafer array, and a second end cap array coupled to a second side of the active wafer array. Thickness shear mode resonator sensors may include an active wafer coupled to a first end cap and a second end cap. Methods of forming a plurality of resonator sensors include forming a plurality of active wafer locations and separating the active wafer locations to form a plurality of discrete resonator sensors. Thickness shear mode resonator sensors may be produced by such methods.

Abstract: Arrays of resonator sensors include an active wafer array comprising a plurality of active wafers, a first end cap array coupled to a first side of the active wafer array, and a second end cap array coupled to a second side of the active wafer array. Thickness shear mode resonator sensors may include an active wafer coupled to a first end cap and a second end cap. Methods of forming a plurality of resonator sensors include forming a plurality of active wafer locations and separating the active wafer locations to form a plurality of discrete resonator sensors. Thickness shear mode resonator sensors may be produced by such methods.

Abstract: Thickness shear mode resonator pressure sensors include a housing having an outer dimension that is less than 0.575 inch (14.605 millimeters). Pressure transducers may include a quartz pressure sensor and a quartz reference sensor, wherein an electronics assembly of the pressure transducer is configured to drive at least one of the quartz pressure sensor and the quartz reference sensor at a frequency greater than 10 MHz. Transducer assemblies include an electronics assembly configured to drive at least one quartz sensor of the transducer assembly at a frequency greater than 10 MHz.