Abstract: A method for setting an optimum value of a write power level for use in an optical recording apparatus for writing information on a recording layer (3) of an optical recording medium (1) by means of a radiation beam (5) is described. The recording layer is able to change between an amorphous and a crystalline state. The apparatus comprises a radiation source (4) for emitting the radiation beam (5) having a controllable value of a write power level (Pw) for recording information on the recording medium, a control unit (12) for recording a series of test patterns in a test area on the recording layer, each pattern being recorded with a different value of the write power level, a read unit (90) for reading the patterns and forming corresponding read signal portions, and first means (10, 101, 102) for deriving a value of a read parameter from at least one read signal portion and setting an optimum value (Popt) of the write power level based on the values of this read parameter.

Abstract: The present invention relates to a method of writing information on an optical recording medium (10 to 38), the optical recording medium having at least one data layer (40) for storing data readable by use of an optical readout device and at least one label layer (42) for storing visible information, the method comprising the steps of: focusing a first wavelength laser beam (44 to 58) onto the at least one data layer for writing data on the data layer, and focusing a second wavelength laser beam (60 to 78) onto the at least one label layer for writing visible information on the label layer, thereby a laser spot size being usable that is also employable when using the second wavelength laser beam for writing data on a data layer for storing data readable by use of an optical readout device. The present invention further relates to an optical recording medium and to a method of manufacturing an optical recording medium.

Abstract: A method of manufacturing a magnetic tunnel junction device, in which a stack (1) comprising two magnetic layers (3, 7) and a barrier layer (5) extending in between is formed. One of the magnetic layers is structured by means of etching, in which, during etching, a part of this layer is made thinner by removing material until a rest layer (7r) remains. This rest layer is passivated by chemical conversion. In the relevant method, it is prevented that the magnetic layer which is not to be structured is detrimentally influenced during structuring of the other magnetic layer.

Abstract: A magnetoresistive angular sensor (1) is provided which determines a magnetic field direction. A high angular accuracy over a wide range of magnetic field strengths is obtained. The magnetoresistive angular sensor comprises a main sensing element (2) which is electrically connected to a first correction sensing element (6) with a first reference magnetization axis (9) and a second correction sensing element (8) with a second reference magnetization axis (10), the first (9) and the second (10) reference magnetization axes making correction angles &THgr; between 5° and 85° of opposite sign with the main reference axis (3).

Abstract: A novel magnetic data storage system and a sensing system of magnetic characteristics are disclosed; the systems have a magnetization direction that is irreversible in an external magnetic field. A method of manufacturing, a method of resetting or changing or repairing and a method of operating such systems are also disclosed. The systems can include a set of magnetic devices in a balancing configuration; essentially each of said devices comprises a structure of layers including at least a first ferromagnetic layer and a second ferromagnetic layer with at least a separation layer of a non-magnetic material there between, said structure having at least a magneto resistance effect. The magnetization direction of the first ferromagnetic layer of at least one of said devices is irreversible in an external magnetic field higher than about 35 kA/m.

Abstract: A magnetoresistive angular sensor (1) is provided which determines a magnetic field direction. A high angular accuracy over a wide range of magnetic field strengths is obtained. The magnetoresistive angular sensor comprises a main sensing element (2) which is electrically connected to a first correction sensing element (6) with a first reference magnetization axis (9) and a second correction sensing element (8) with a second reference magnetization axis (10), the first (9) and the second (10) reference magnetization axes making correction angles &THgr; between 5° and 85° of opposite sign with the main reference axis (3).