Patents by Inventor Derrick A. Shaughnessy

Derrick A. Shaughnessy has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of photocarrier radiometry of semiconductors
    Patent number: 7045786
    Abstract: The present invention relates to metrologic methodologies and instrumentation, in particular laser-frequency domain infrared photocarrier radiometry (PCR), for contamination and defect mapping and measuring electronic properties in industrial Si wafers, devices and other semiconducting materials. In particular the invention relates to the measurement of carrier recombination lifetime, ?, carrier diffusivity, D, surface recombination velocities, S, carrier diffusion lengths, L, and carrier mobility, ?, as well as heavy metal contamination mapping, ion implantation mapping over a wide range of dose and energy, and determination of the concentration of mobile impurities in SiO2 layers on semiconductor substrates. The present invention provides a method and complete photocarrier radiometric apparatus comprising novel signal generation and analysis techniques (carrier-wave interferometry) as well as novel instrumental hardware configurations based on the physical principle of photocarrier radiometry.
    Type: Grant
    Filed: March 11, 2004
    Date of Patent: May 16, 2006
    Inventors: Andreas Mandelis, Derrick Shaughnessy, Jerias Alves Batista, Jose A. Garcia
  • Method of photocarrier radiometry of semiconductors
    Publication number: 20040183019
    Abstract: The present invention relates to metrologic methodologies and instrumentation, in particular laser-frequency domain infrared photocarrier radiometry (PCR), for contamination and defect mapping and measuring electronic properties in industrial Si wafers, devices and other semiconducting materials. In particular the invention relates to the measurement of carrier recombination lifetime, &tgr;, carrier diffusivity, D, surface recombination velocities, S, carrier diffusion lengths, L, and carrier mobility, &mgr;, as well as heavy metal contamination mapping, ion implantation mapping over a wide range of dose and energy, and determination of the concentration of mobile impurities in SiO2 layers on semiconductor substrates. The present invention provides a method and complete photocarrier radiometric apparatus comprising novel signal generation and analysis techniques (carrier-wave interferometry) as well as novel instrumental hardware configurations based on the physical principle of photocarrier radiometry.
    Type: Application
    Filed: March 11, 2004
    Publication date: September 23, 2004
    Inventors: Andreas Mandelis, Derrick Shaughnessy, Jerias Alves Batista, Jose A. Garcia