Abstract: A method for preventing the collapse of patterned, high aspect ratio features formed in semiconductor substrates upon removal of an initial fluid of the type used to clean etch residues from the spaces between the features. In the present method, the spaces are at least partially filled with a displacement solution, such as via spin coating, to substantially displace the initial fluid. The displacement solution includes at least one solvent and at least one fill material in the form of a water-soluble polymer such as polyvinylpyrrolidone (PVP) or polyacrylamide (PAAM). The solvent is then volatized to deposit the fill material in substantially solid form within the spaces. The fill material may be removed by known plasma ash process via a high ash rate as compared to use of current fill materials, which prevents or mitigates silicon loss.

Abstract: A method for preventing the collapse of patterned, high aspect ratio features formed in semiconductor substrates upon removal of wash solutions of the type used to clean etch residues from the spaces between the features. In the present method, the spaces are at least partially filled with a displacement solution, such as via spin coating, to substantially displace the wash solution. The displacement solution includes at least one solvent and at least one fill material which is a polyalkene carbonate (PAC) and/or a saccharide. The solvent is then volatized to deposit the fill material in substantially solid form within the spaces. The fill material may be removed by thermal degradation via heat treatment, wherein the need for removal of the fill material by plasma ashing is obviated in order to prevent or mitigate silicon loss.

Abstract: A method for preventing the collapse of patterned, high aspect ratio features formed in semiconductor substrates upon removal of an initial fluid of the type used to clean etch residues from the spaces between the features. In the present method, the spaces are at least partially filled with a displacement solution, such as via spin coating, to substantially displace the initial fluid. The displacement solution includes at least one solvent and at least one, or combination of, a first fill material in the form of a phenol-formaldehyde polymer and/or a second fill material in the form of a polyalkene carbonate (PAC). The solvent is then volatized to deposit the fill materials in substantially solid form within the spaces. The fill materials may be removed by known plasma etch process via a high etch rate as compared to use of current fill materials, which prevents or mitigates silicon loss.

Abstract: A crosslinkable composition includes a first silicon-containing resin comprising alkyl groups and alkyl groups and a second silicon-containing resin comprising alkyl groups. The first silicon-containing resin has a weight average molecular weight from 1000 AMU to 10,000 AMU. The second silicon-containing resin has a weight average molecular weight from 900 AMU to 5000 AMU. The composition further includes at least one solvent and at least one heat-activated catalyst.

Abstract: A composition is provided including a resin including one or more silicon-based materials, one or more organic-based materials, or a combination of silicon-based materials and organic-based materials. The composition further includes a first solvent having a boiling point from 140° C. to 250° C. and a second solvent having a boiling point from 50° C. to 110° C., wherein the a weight ratio of the first solvent to the second solvent is from 1:1 to 1:5. Methods for applying coatings to substrates are also provided.

Abstract: A method for temporarily protecting a semiconductor device wafer during processing includes preparing a solution including poly(vinyl alcohol) and water, coating the device wafer with the prepared solution, baking the coated device wafer to form a protective layer, processing the baked device wafer, and dissolving the protective layer from the processed wafer with a solvent at a temperature not less than 65° C. The solvent includes water. The baking is at a temperature from 150° C. to 170° C. The protective layer remains on the baked device wafer during processing. The poly(vinyl alcohol) has a degree of hydrolysis greater than or equal to 93%.

Abstract: A method for preventing the collapse of patterned, high aspect ratio features formed in semiconductor substrates upon removal of wash solutions of the type used to clean etch residues from the spaces between the features. In the present method, the spaces are at least partially filled with a displacement solution, such as via spin coating, to substantially displace the wash solution. The displacement solution includes at least one solvent and at least one fill material which is a polyalkene carbonate (PAC) and/or a saccharide. The solvent is then volatized to deposit the fill material in substantially solid form within the spaces. The fill material may be removed by thermal degradation via heat treatment, wherein the need for removal of the fill material by plasma ashing is obviated in order to prevent or mitigate silicon loss.

Abstract: A method for preventing the collapse of patterned, high aspect ratio features formed in semiconductor substrates upon removal of an initial fluid of the type used to clean etch residues from the spaces between the features. In the present method, the spaces are at least partially filled with a displacement solution, such as via spin coating, to substantially displace the initial fluid. The displacement solution includes at least one solvent and at least one, or combination of, a first fill material in the form of a phenol-formaldehyde polymer and/or a second fill material in the form of a polyalkene carbonate (PAC). The solvent is then volatized to deposit the fill materials in substantially solid form within the spaces. The fill materials may be removed by known plasma etch process via a high etch rate as compared to use of current fill materials, which prevents or mitigates silicon loss.

Abstract: A method for temporarily protecting a semiconductor device wafer during processing includes preparing a solution including poly(vinyl alcohol) and water, coating the device wafer with the prepared solution, baking the coated device wafer to form a protective layer, processing the baked device wafer, and dissolving the protective layer from the processed wafer with a solvent at a temperature not less than 65° C. The solvent includes water. The baking is at a temperature from 150° C. to 170° C. The protective layer remains on the baked device wafer during processing. The poly(vinyl alcohol) has a degree of hydrolysis greater than or equal to 93%.

Abstract: A crosslinkable composition includes a first silicon-containing resin comprising alkyl groups and alkyl groups and a second silicon-containing resin comprising alkyl groups. The first silicon-containing resin has a weight average molecular weight from 1000 AMU to 10,000 AMU. The second silicon-containing resin has a weight average molecular weight from 900 AMU to 5000 AMU. The composition further includes at least one solvent and at least one heat-activated catalyst.

Abstract: A composition is provided including a resin including one or more silicon-based materials, one or more organic-based materials, or a combination of silicon-based materials and organic-based materials. The composition further includes a first solvent having a boiling point from 140° C. to 250° C. and a second solvent having a boiling point from 50° C. to 110° C., wherein the a weight ratio of the first solvent to the second solvent is from 1:1 to 1:5. Methods for applying coatings to substrates are also provided.

Abstract: A composition includes a solvent, a catalyst, a polysiloxane including methyl and phenyl pendant groups, and a crosslinker comprising at least one of a phenylene disilyl group and para-disilyl phenylene group. Exemplary crosslinkers include bis silyl benzene, bis alkoxysilane, 1,3 bistriethoxysilyl benzene, and 1,4 bistriethoxysilyl benzene 2,6-bis(triethoxysilyl)-naphthalene, 9,10-bis(triethoxysilyl)-anthracene, and 1,6-bis(trimethoxysilyl)-pyrene.

Abstract: A chemically modified anti-reflective (AR) coating is provided having improved durability. The AR coating may be a polymerized alkoxy siloxane-based material that includes a densifier in the form of an organic or inorganic phosphorus (P)-based compound, boron (B)-based compound, antimony (Sb)-based compound, bismuth (Bi)-based compound, lead (Pb)-based compound, arsenic (As)-based compound, or combinations thereof. At least one residue of the densifier may be chemically and/or physically incorporated into the polymerized alkoxy siloxane-based material.

Abstract: Provided herein is a reflective optical construction containing a fluoropolymer barrier layer, wherein the fluoropolymer is selected from the group consisting of homopolymers and copolymers of at least one tetrafluoropropene or pentafluoropropene, preferably 2,3,3,3-tetrafluoropropene. Also disclosed is a method of forming a reflective optical construction including (a) applying a barrier layer comprising one or more fluoropolymers selected from the group consisting of homopolymers and copolymers of at least one tetrafluoropropene or pentafluoropropene, and (b) curing.

Abstract: Provided herein is a reflective optical construction containing a fluoropolymer barrier layer, wherein the fluoropolymer is selected from the group consisting of homopolymers and copolymers of at least one tetrafluoropropene or pentafluoropropene, preferably 2,3,3,3-tetrafluoropropene. Also disclosed is a method of forming a reflective optical construction including (a) applying a barrier layer comprising one or more fluoropolymers selected from the group consisting of homopolymers and copolymers of at least one tetrafluoropropene or pentafluoropropene, and (b) curing.

Abstract: Anti-reflective coatings and coating formulations, optical elements and processes for preparing coating formulations and optical elements are described. The coating formulations are formed from at least one alkoxysilane material and at least one high boiling solvent. The coating formulation may be applied using roller coat processes.

Abstract: Anti-reflective coatings and coating formulations, optical elements and processes for preparing coating formulations and optical elements are described. The coating formulations are formed from at least one alkoxysilane material and at least one high boiling solvent. The coating formulation may be applied using roller coat processes.

Abstract: Provided herein is a reflective optical construction containing a fluoropolymer barrier layer, wherein the fluoropolymer is selected from the group consisting of homopolymers and copolymers of at least one tetrafluoropropene or pentafluoropropene, preferably 2,3,3,3-tetrafluoropropene. Also disclosed is a method of forming a reflective optical construction including (a) applying a barrier layer comprising one or more fluoropolymers selected from the group consisting of homopolymers and copolymers of at least one tetrafluoropropene or pentafluoropropene, and (b) curing.

Abstract: An interior rearview mirror reflective element includes a front substrate connected with a rear substrate via a perimeter seal, whereby, when so connected, at least a portion of a circumferential outer edge of the rear substrate is inward of a circumferential outer edge of the front substrate and no portion of the rear substrate protrudes beyond the front substrate. A first electrical connection establishes electrical connection at the front substrate and a second electrical connection may establish electrical connection at the rear substrate. An electrically conductive perimeter hiding band is disposed around a border region of the front substrate and substantially hides the seal and the electrical connections from view by a driver normally operating the vehicle and viewing the reflective element when the interior rearview mirror assembly is normally mounted in the vehicle.

Abstract: A reflective mirror assembly includes an electro-optic reflective element providing a rearward field of view to a driver of a vehicle equipped with the reflective mirror assembly. The electro-optic reflective element includes an electro-optic medium disposed between a front substrate and a rear substrate in a cavity established by a seal that connects the front substrate to the rear substrate and that spaces them apart. An overhang region at a first edge region of the front substrate extends beyond a corresponding first edge region of the rear substrate. A transparent electrical conductor is disposed at the front substrate and a mirror reflector is disposed at the rear substrate. An electrically conducting tab extends outward from said seal at least partially to the edge of the rear substrate while making electrical contact with the mirror reflector. At least one hiding layer is disposed around a perimeter region of the front substrate.