Abstract: A group III nitride transistor structure capable of reducing a leakage current and a fabricating method thereof are provided. The group III nitride transistor structure includes: a first heterojunction and a second heterojunction which are laminated, wherein the first heterojunction is electrically isolated from the second heterojunction via a high resistance material and/or insertion layer; a first electrode, a second electrode and a first gate which are matched with the first heterojunction, wherein a third semiconductor is arranged between the first gate and the first heterojunction, and the first gate is also electrically connected with the first electrode; a source, a drain and a second gate which are matched with the second heterojunction, wherein the source and the drain are also respectively electrically connected with the first gate and the second electrode, and a sixth semiconductor is arranged between the second gate and the second heterojunction.

Abstract: A group III nitride transistor structure capable of reducing a leakage current and a fabricating method thereof are provided. The group III nitride transistor structure includes: a first heterojunction and a second heterojunction which are laminated, wherein the first heterojunction is electrically isolated from the second heterojunction via a high resistance material and/or insertion layer; a first electrode, a second electrode and a first gate which are matched with the first heterojunction, wherein a third semiconductor is arranged between the first gate and the first heterojunction, and the first gate is also electrically connected with the first electrode; a source, a drain and a second gate which are matched with the second heterojunction, wherein the source and the drain are also respectively electrically connected with the first gate and the second electrode, and a sixth semiconductor is arranged between the second gate and the second heterojunction.

Abstract: Disclosed herein is a leakage protector, which includes a housing. A base plate and a brush are arranged in the housing. A first conducting strip and a second conducting strip spaced apart are arranged on the base plate. The brush is provided with contact pins to contact the first conducting strip and the second conducting strip, respectively. The second conducting strip can generate different analog voltages, and the first conducting strip is configured to transmit different analog voltages to a microprocessor. A user can drive the brush to move through an actuating part, and set the power-on time of the leakage protector in one step.

Abstract: Disclosed herein is a leakage protector, which includes a housing. A base plate and a brush are arranged in the housing. A first conducting strip and a second conducting strip spaced apart are arranged on the base plate. The brush is provided with contact pins to contact the first conducting strip and the second conducting strip, respectively. The second conducting strip can generate different analog voltages, and the first conducting strip is configured to transmit different analog voltages to a microprocessor. A user can drive the brush to move through an actuating part, and set the power-on time of the leakage protector in one step.

Abstract: A sensing device includes: an encoder rotating with a rotation shaft and having an external surface with an alternating structure made of magnetic material; at least one magnet facing the external surface and arranged to be fixed outside the encoder; and at least one sensing element arranged to be fixed between the at least one magnet and the encoder and output an alternating signal from the alternating structure as the encoder rotates, wherein the sensing element is a sensing element sensitive to a magnetic field.