Abstract: Apparatus for depositing one or more variable interference filters onto one or more substrates comprises a vacuum chamber, at least one magnetron sputtering device and at least one movable mount for supporting the one or more substrates within the vacuum chamber. The at least one magnetron sputtering device is configured to sputter material from a sputtering target towards in the mount, thereby defining a sputtering zone within the vacuum chamber. At least one static sputtering mask is located between the sputtering target and the mount. The at least one static sputtering mask is configured such that, when each substrate is moved through the sputtering zone on the at least one movable mount, a layer of material having a non-uniform thickness is deposited on each said substrate.

Abstract: A method for producing an ultrasonic transducer or ultrasonic transducer array, the method comprising providing or depositing a layer of piezoelectric material on a substrate. The piezoelectric material is a doped, co-deposited or alloyed piezoelectric material. The piezoelectric material comprises: a doped, co-deposited or alloyed metal oxide or metal nitride, the metal oxide or metal nitride being doped, co-deposited or alloyed with vanadium or a compound thereof; or zinc oxide doped, co-deposited or alloyed with a transition metal or a compound thereof. Optionally, the deposition of the layer of piezoelectric material is by sputter coating, e.g. using a sputtering target that comprises a doped or alloyed piezoelectric material. In examples, the layer of piezoelectric material is deposited onto the substrate using high power impulse magnetron sputtering (HIPIMS). Further enhancement may be obtained using substrate biasing (e.g. DC and/or RF) during deposition of the layer of piezoelectric material.

Abstract: An absorber for absorbing electromagnetic radiation including a first layer with hydrogenated carbon, and a second layer with carbon, and the first layer is less absorbing than the second layer.

Abstract: An optical sensor for multispectral analysis of a fluid sample comprises at least one light source, at least one interference filter, and a plurality of light detectors arranged such that light emitted by the at least one light source is incident on the at least one interference filter. There is a spatial variation in the intensity of light incident on the said at least one interference filter.

Abstract: Apparatus for depositing germanium and carbon onto one or more substrates comprises a vacuum chamber, at least first and second magnetron sputtering devices and at least one movable mount for supporting the one or more substrates within the vacuum chamber. The first magnetron sputtering device is configured to sputter germanium towards the at least one mount from a first sputtering target comprising germanium, thereby defining a germanium sputtering zone within the vacuum chamber. The second magnetron sputtering device is configured to sputter carbon towards the at least one mount from a second sputtering target comprising carbon, thereby defining a carbon sputtering zone within the vacuum chamber.

Abstract: An optical sensor for multispectral analysis of a fluid sample comprises at least one light source, at least one interference filter, and a plurality of light detectors arranged such that light emitted by the at least one light source is incident on the at least one interference filter. There is a spatial variation in the intensity of light incident on the said at least one interference filter.

Abstract: An optical sensor for multispectral analysis of a fluid sample comprises at least one light source, at least one interference filter, and a plurality of light detectors arranged such that light emitted by the at least one light source is incident on the at least one interference filter. There is a spatial variation in the intensity of light incident on the said at least one interference filter.

Abstract: A method for producing an ultrasonic transducer or ultrasonic transducer array, the method comprising providing or depositing a layer of piezoelectric material on a substrate. The piezoelectric material is a doped, co-deposited or alloyed piezoelectric material. The piezoelectric material comprises: a doped, co-deposited or alloyed metal oxide or metal nitride, the metal oxide or metal nitride being doped, co-deposited or alloyed with vanadium or a compound thereof; or zinc oxide doped, co-deposited or alloyed with a transition metal or a compound thereof. Optionally, the deposition of the layer of piezoelectric material is by sputter coating, e.g. using a sputtering target that comprises a doped or alloyed piezoelectric material. In examples, the layer of piezoelectric material is deposited onto the substrate using high power impulse magnetron sputtering (HIPIMS). Further enhancement may be obtained using substrate biasing (e.g. DC and/or RF) during deposition of the layer of piezoelectric material.

Abstract: Apparatus for depositing germanium and carbon onto one or more substrates comprises a vacuum chamber, at least first and second magnetron sputtering devices and at least one movable mount for supporting the one or more substrates within the vacuum chamber. The first magnetron sputtering device is configured to sputter germanium towards the at least one mount from a first sputtering target comprising germanium, thereby defining a germanium sputtering zone within the vacuum chamber. The second magnetron sputtering device is configured to sputter carbon towards the at least one mount from a second sputtering target comprising carbon, thereby defining a carbon sputtering zone within the vacuum chamber.

Abstract: An optical sensor for multispectral analysis of a fluid sample comprises at least one light source, at least one interference filter, and a plurality of light detectors arranged such that light emitted by the at least one light source is incident on the at least one interference filter. There is a spatial variation in the intensity of light incident on the said at least one interference filter.

Abstract: Apparatus for depositing one or more variable interference filters onto one or more substrates comprises a vacuum chamber, at least one magnetron sputtering device and at least one movable mount for supporting the one or more substrates within the vacuum chamber. The at least one magnetron sputtering device is configured to sputter material from a sputtering target towards in the mount, thereby defining a sputtering zone within the vacuum chamber. At least one static sputtering mask is located between the sputtering target and the mount. The at least one static sputtering mask is configured such that, when each substrate is moved through the sputtering zone on the at least one movable mount, a layer of material having a non-uniform thickness is deposited on each said substrate.

Abstract: The invention relates to apparatus and a method for depositing material onto substrates, particularly optical substrates, to form a coating thereon. The apparatus and method incorporates the use of a series of magnetrons provided to be controlled to sputter deposit material provided in targets mounted therein, on to the substrates. There is provided a voltage to the magnetrons to operate the same and the level of voltage which is required to form required coating or coating layer characteristics is determined by using monitoring apparatus, at least when forming the coating or coating layer for the first time. The appropriate voltage level data for operation of the magnetrons can be held in a database and subsequently used to control the voltage level when forming an identified coating or layers of coatings.

Abstract: The invention relates to a method and apparatus for the application of material to form a layer of an organic electroluminescent device. The material is sputter deposited typically from at least one target of material held in respect to a magnetron in a coating chamber. The magnetrons used can be unbalanced magnetrons and/or are provided with other magnetrons and/or magnet arrays in a closed field configuration. The material is found to be deposited in a manner which prevents or minimises damage to the device and hence reduces or removes the need for a barrier layer to be applied.

Abstract: The invention relates to a method and apparatus for the application of material to form a layer of an organic electroluminescent device. The material is sputter deposited typically from at least one target of material held in respect to a magnetron in a coating chamber. The magnetrons used can be unbalanced magnetrons and/or are provided with other magnetrons and/or magnet arrays in a closed field configuration. The material is found to be deposited in a manner which prevents or minimises damage to the device and hence reduces or removes the need for a barrier layer to be applied.

Abstract: The invention relates to apparatus and a method for depositing material onto substrates, particularly optical substrates, to form a coating thereon. The apparatus and method incorporates the use of a series of magnetrons provided to be controlled to sputter deposit material provided in targets mounted therein, on to the substrates. There is provided a voltage to the magnetrons to operate the same and the level of voltage which is required to form required coating or coating layer characteristics is determined by using monitoring apparatus, at least when forming the coating or coating layer for the first time. The appropriate voltage level data for operation of the magnetrons can be held in a database and subsequently used to control the voltage level when forming an identified coating or layers of coatings.

Abstract: A plasma source comprises a thermionic emitter (2) heated by an induction coil (7), which also provides radiofrequency energy within an electrically insulated cylindrical former (1). A cylindrical anode (10) is concentric with emitter (2) and axially displaced therefrom, generating a potential difference between anode (10) and emitter (2). The potential difference between anode (2) and ground and axial magnetic fields causes the plasma to be extracted from the source. Emitter (2) is held at negative potential via a conductive support (5). Process gas is introduced near emitter (2) and a secondary gas injected in the anode space. Radiofrequency excitation of emitter (2) generates electrons via thermionic and field effects, resulting in efficient plasma generation. Both electron generation effects contribute to a broad energy spectrum of electrons, providing effective neutralization of the plasma.

Abstract: Apparatus (10) for treating a substrate, comprising: a vacuum chamber (12); a substrate carrier (14) adapted to carry a substrate (16) to be treated; a source material holder (22) for holding a source material (34) with which the substrate (16) is to be treated; and vaporising or sputtering means (20) for vaporising/sputtering the source material (34); wherein the source material holder (22) includes a positioning means (24) for relatively moving the source material (34) towards the substrate carrier (14).

Abstract: Apparatus (10) for treating a substrate, comprising: a vacuum chamber (12); a substrate carrier (14) adapted to carry a substrate (16) to be treated; a source material holder (22) for holding a source material (34) with which the substrate (16) is to be treated; and vaporising or sputtering means (20) for vaporising/sputtering the source material (34); wherein the source material holder (22) includes a positioning means (24) for relatively moving the source material (34) towards the substrate carrier (14).

Abstract: A plasma source comprises a thermionic emitter (2) heated by an induction coil (7), which also provides radiofrequency energy within an electrically insulated cylindrical former (1). A cylindrical anode (10) is concentric with emitter (2) and axially displaced therefrom, generating a potential difference between anode (10) and emitter (2). The potential difference between anode (2) and ground and axial magnetic fields causes the plasma to be extracted from the source. Emitter (2) is held at negative potential via a conductive support (5). Process gas is introduced near emitter (2) and a secondary gas injected in the anode space. Radiofrequency excitation of emitter (2) generates electrons via thermionic and field effects, resulting in efficient plasma generation. Both electron generation effects contribute to a broad energy spectrum of electrons, providing effective neutralisation of the plasma.