Patents by Inventor Dethard Peters
Dethard Peters has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20160260829Abstract: A semiconductor device includes trench structures that extend from a first surface into a semiconductor body. The trench structures include a gate structure and a contact structure that extends through the gate structure, respectively. Transistor mesas are between the trench structures. Each transistor mesa includes a body zone forming a first pn junction with a drift structure and a second pn junction with a source zone. Diode regions directly adjoin one of the contact structures form a third pn junction with the drift structure, respectively.Type: ApplicationFiled: March 1, 2016Publication date: September 8, 2016Inventors: Thomas Aichinger, Romain Esteve, Dethard Peters, Roland Rupp, Ralf Siemieniec
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Publication number: 20160190121Abstract: A semiconductor body has a drift region layer, a body region layer adjoining the drift region layer, and a source region layer adjoining the body region layer and forming a first surface of the semiconductor body. At least two diode regions extend from the first surface through the source and body region layers into the drift region layer. Each diode region and the drift region layer form one pn-junction. At least two trenches have first and second opposing sidewalls and a bottom such that each trench adjoins the body region layer on one sidewall, one diode region on the second sidewall and one pn-junction on the bottom. In each trench, a gate dielectric dielectrically insulates a gate electrode from the semiconductor body. Sections of the source and body region layers remaining after forming the diode regions form source regions and body regions, respectively.Type: ApplicationFiled: March 8, 2016Publication date: June 30, 2016Inventors: Ralf Siemieniec, Dethard Peters, Romain Esteve
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Publication number: 20160190301Abstract: A semiconductor device includes stripe-shaped trench gate structures that extend in a semiconductor body along a first horizontal direction. Transistor mesas between neighboring trench gate structures include body regions and source zones, wherein the body regions form first pn junctions with a drift structure and second pn junctions with the source zones. The source zones directly adjoin two neighboring trench gate structures, respectively. Diode mesas that include at least portions of diode regions form third pn junctions with the drift structure. The diode mesas directly adjoin two neighboring trench gate structures, respectively. The transistor mesas and the diode mesas alternate at least along the first horizontal direction.Type: ApplicationFiled: December 18, 2015Publication date: June 30, 2016Inventors: Thomas Aichinger, Dethard Peters, Ralf Siemieniec
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Publication number: 20160172468Abstract: A silicon-carbide semiconductor substrate having a plurality of first doped regions being laterally spaced apart from one another and beneath a main surface, and a second doped region extending from the main surface to a third doped region that is above the first doped regions is formed. Fourth doped regions extending from the main surface to the first doped regions are formed. A gate trench having a bottom that is arranged over a portion of one of the first doped regions is formed. A high-temperature step is applied to the substrate so as to realign silicon-carbide atoms along sidewalls of the trench and form rounded corners in the gate trench. A surface layer that forms along the sidewalls of the gate trench during the high-temperature step from the substrate is removed.Type: ApplicationFiled: December 11, 2014Publication date: June 16, 2016Inventors: Romain Esteve, Dethard Peters, Wolfgang Bergner, Ralf Siemieniec, Thomas Aichinger, Daniel Kueck
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Publication number: 20160163852Abstract: A semiconductor device includes a semiconductor body and a device cell in the semiconductor body. The device cell includes: drift, source, body and diode regions; a pn junction between the diode and drift regions; a trench with first and second opposing sidewalls and a bottom, the body region adjoining the first sidewall, the diode region adjoining the second sidewall, and the pn junction adjoining the trench bottom; a gate electrode in the trench and dielectrically insulated from the source, body, diode and drift regions by a gate dielectric; a further trench extending from a first surface of the semiconductor body into the semiconductor body; a source electrode arranged in the further trench adjoining the source and diode regions. The diode region includes a lower diode region arranged below the trench bottom. The lower diode region has a maximum of a doping concentration distant to the trench bottom.Type: ApplicationFiled: December 2, 2015Publication date: June 9, 2016Inventors: Ralf Siemieniec, Wolfgang Bergner, Romain Esteve, Dethard Peters
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Patent number: 9293558Abstract: A semiconductor device includes at least two device cells integrated in a semiconductor body. Each device cell includes a drift region, a source region, a drain region arranged between the source region and the drift region, a diode region, a pn junction between the diode region and the drift region, and a trench with a first sidewall, a second sidewall opposite the first sidewall, and a bottom. The body region adjoins the first sidewall, the diode region adjoins the second sidewall, and the pn junction adjoins the bottom of the trench. Each device cell further includes a gate electrode arranged in the trench and dielectrically insulated from the body region, the diode region and the drift region by a gate dielectric. The diode regions of the at least two device cells are distant in a lateral direction of the semiconductor body.Type: GrantFiled: November 26, 2012Date of Patent: March 22, 2016Assignee: Infineon Technologies Austria AGInventors: Ralf Siemieniec, Dethard Peters, Romain Esteve
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Publication number: 20150340487Abstract: A semiconductor device includes a semiconductor body and at least one device cell integrated in the semiconductor body. Each device cell includes: a drift region, a source region, and a body region arranged between the source and drift regions; a diode region and a pn junction between the diode and drift regions; a trench having a first sidewall, a second sidewall opposite the first sidewall, and a bottom, the body region adjoining the first sidewall, the diode region adjoining the second sidewall, and the pn junction adjoining the bottom; a gate electrode in the trench and dielectrically insulated from the body, diode and drift regions by a gate dielectric. The diode region has a lower diode region arranged below the trench bottom, and the lower diode region has a maximum of a doping concentration distant to the trench bottom. A corresponding method of manufacturing the device also is provided.Type: ApplicationFiled: May 21, 2015Publication date: November 26, 2015Inventors: Ralf Siemieniec, Wolfgang Bergner, Romain Esteve, Dethard Peters
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Patent number: 8854087Abstract: An electronic circuit includes a first transistor device with a control terminal and a load path. A drive circuit includes an input terminal and an output terminal. The output terminal is coupled to the control terminal of the first transistor device. The drive circuit is operable to drive the first transistor device dependent on an input signal received at the input terminal. A polarity detector is coupled in parallel with the load path of the first transistor device. The polarity detector includes a second transistor device and a current detector. The second transistor device includes a load path connected to the load path of the first transistor device. The current detector includes a sense path in series with the load path of the second transistor device and an output connected to the input terminal of the drive circuit.Type: GrantFiled: September 28, 2012Date of Patent: October 7, 2014Assignee: Infineon Technologies Austria AGInventors: Dethard Peters, Ralf Siemieniec, Peter Friedrichs
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Publication number: 20140145206Abstract: A semiconductor device includes at least two device cells integrated in a semiconductor body. Each device cell includes a drift region, a source region, a drain region arranged between the source region and the drift region, a diode region, a pn junction between the diode region and the drift region, and a trench with a first sidewall, a second sidewall opposite the first sidewall, and a bottom. The body region adjoins the first sidewall, the diode region adjoins the second sidewall, and the pn junction adjoins the bottom of the trench. Each device cell further includes a gate electrode arranged in the trench and dielectrically insulated from the body region, the diode region and the drift region by a gate dielectric. The diode regions of the at least two device cells are distant in a lateral direction of the semiconductor body.Type: ApplicationFiled: November 26, 2012Publication date: May 29, 2014Inventors: Ralf Siemieniec, Dethard Peters, Romain Esteve
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Publication number: 20140091839Abstract: An electronic circuit includes a first transistor device with a control terminal and a load path. A drive circuit includes an input terminal and an output terminal. The output terminal is coupled to the control terminal of the first transistor device. The drive circuit is operable to drive the first transistor device dependent on an input signal received at the input terminal. A polarity detector is coupled in parallel with the load path of the first transistor device. The polarity detector includes a second transistor device and a current detector. The second transistor device includes a load path connected to the load path of the first transistor device. The current detector includes a sense path in series with the load path of the second transistor device and an output connected to the input terminal of the drive circuit.Type: ApplicationFiled: September 28, 2012Publication date: April 3, 2014Applicant: Infineon Technologies Austria AGInventors: Dethard Peters, Ralf Siemieniec, Peter Friedrichs
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Patent number: 8637922Abstract: A manufacturing method provides a semiconductor device having a semiconductor body defining a source region, a body region, a drift region and a diode region. The drift region has a first drift region section and a second drift region section. The diode region is buried within the drift region, and has a semiconductor type opposite to the drift region to form a diode. The diode region is separated from the gate electrode by the first drift region section extending from the diode region in a vertical direction. The gate electrode is adjacent the body region and insulated from the body region by a gate dielectric. A source electrode is electrically connected to the source region, the body region and the diode region. A semiconductor region of a doping type opposite to the doping type of the drift region is arranged between the first drift region section and the source electrode.Type: GrantFiled: July 19, 2012Date of Patent: January 28, 2014Assignee: Infineon Technologies AGInventors: Ralf Siemieniec, Dethard Peters, Peter Friedrichs
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Publication number: 20140021484Abstract: A manufacturing method provides a semiconductor device having a semiconductor body defining a source region, a body region, a drift region and a diode region. The drift region has a first drift region section and a second drift region section. The diode region is buried within the drift region, and has a semiconductor type opposite to the drift region to form a diode. The diode region is separated from the gate electrode by the first drift region section extending from the diode region in a vertical direction. The gate electrode is adjacent the body region and insulated from the body region by a gate dielectric. A source electrode is electrically connected to the source region, the body region and the diode region. A semiconductor region of a doping type opposite to the doping type of the drift region is arranged between the first drift region section and the source electrode.Type: ApplicationFiled: July 19, 2012Publication date: January 23, 2014Applicant: INFINEON TECHNOLOGIES AGInventors: Ralf Siemieniec, Dethard Peters, Peter Friedrichs
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Patent number: 8102012Abstract: A transistor component having a shielding structure. One embodiment provides a source terminal, a drain terminal and control terminal. A source zone of a first conductivity type is connected to the source terminal. A drain zone of the first conductivity type is connected to the drain terminal. A drift zone is arranged between the source zone and the drain zone. A junction control structure is provided for controlling a junction zone in the drift zone between the drain zone and the source zone, at least including one control zone. A shielding structure is arranged in the drift zone between the junction control structure and the drain zone and at least includes a shielding zone of a second conductivity type being complementarily to the first conductivity type. The shielding zone is connected to a terminal for a shielding potential.Type: GrantFiled: April 17, 2009Date of Patent: January 24, 2012Assignee: Infineon Technologies Austria AGInventors: Dethard Peters, Peter Friedrichs, Rudolf Elpelt, Larissa Wehrhahn-Kilian, Michael Treu, Roland Rupp
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Publication number: 20100264467Abstract: A transistor component having a shielding structure. One embodiment provides a source terminal, a drain terminal and control terminal. A source zone of a first conductivity type is connected to the source terminal. A drain zone of the first conductivity type is connected to the drain terminal. A drift zone is arranged between the source zone and the drain zone. A junction control structure is provided for controlling a junction zone in the drift zone between the drain zone and the source zone, at least including one control zone. A shielding structure is arranged in the drift zone between the junction control structure and the drain zone and at least includes a shielding zone of a second conductivity type being complementarily to the first conductivity type. The shielding zone is connected to a terminal for a shielding potential.Type: ApplicationFiled: April 17, 2009Publication date: October 21, 2010Applicant: INFINEON TECHNOLOGIES AUSTRIA AGInventors: Dethard Peters, Peter Friedrichs, Rudolf Elpelt, Larissa Wehrhahn-Kilian, Michael Treu, Roland Rupp
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Patent number: 7646026Abstract: An integrated vertical SiC—PN power diode has a highly doped SiC semiconductor body of a first conductivity type, a low-doped drift zone of the first conductivity type, arranged above the semiconductor body on the emitter side, an emitter zone of a second conductivity type, applied to the drift zone, and at least one thin intermediate layer of the first conductivity type. The intermediate layer is arranged inside the drift zone, has a higher doping concentration than the drift zone, and divides the drift zone into at least one first anode-side drift zone layer and at least one second cathode-side drift zone layer. There is also disclosed a circuit configuration with such SiC—PN power diodes.Type: GrantFiled: September 19, 2006Date of Patent: January 12, 2010Assignee: SiCED Electronics Development GmbH & Co. KGInventors: Peter Friedrichs, Dethard Peters, Reinhold Schörner, Dietrich Stephani
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Publication number: 20080217627Abstract: An integrated vertical SiC—PN power diode has a highly doped SiC semiconductor body of a first conductivity type, a low-doped drift zone of the first conductivity type, arranged above the semiconductor body on the emitter side, an emitter zone of a second conductivity type, applied to the drift zone, and at least one thin intermediate layer of the first conductivity type. The intermediate layer is arranged inside the drift zone, has a higher doping concentration than the drift zone, and divides the drift zone into at least one first anode-side drift zone layer and at least one second cathode-side drift zone layer. There is also disclosed a circuit configuration with such SiC—PN power diodes.Type: ApplicationFiled: September 19, 2006Publication date: September 11, 2008Applicant: SiCED Electronics Development GmbHInventors: Peter Friedrichs, Dethard Peters, Reinhold Schorner, Dietrich Stephani
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Patent number: 6936850Abstract: The semiconductor device includes a first semiconductor region made from n-conducting SiC and a second semiconductor region made from p-conducting SiC. A Schottky contact layer electrically contacts the first semiconductor region, and an ohmic p-contact layer electrically contacts the second semiconductor region. Both contact layers consist of a nickel-aluminum material. This allows both contact layers to be annealed together without adversely effecting the Schottky contact behavior.Type: GrantFiled: March 22, 2002Date of Patent: August 30, 2005Assignee: SiCED Electronics Development GmbH & Co. KGInventors: Peter Friedrichs, Dethard Peters, Reinhold Schoerner
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Patent number: 6815351Abstract: A semiconductor configuration with an ohmic contact-connection includes a p-conducting semiconductor region made of silicon carbide. A p-type contact region serves for the contact-connection. The p-type contact region is composed of a material containing at least nickel and aluminum. A substantially uniform material composition is present in the entire p-type contact region. A method for contact-connecting p-conducting silicon carbide with a material containing at least nickel and aluminum is also provided. The two components nickel and aluminum are applied simultaneously on the p-conducting semiconductor region.Type: GrantFiled: March 7, 2003Date of Patent: November 9, 2004Assignee: SiCED Electronics Development GmbH & Co. KGInventors: Peter Friedrichs, Dethard Peters, Reinhold Schörner
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Patent number: 6667495Abstract: A semiconductor configuration with ohmic contact-connection includes a first and a second semiconductor region made of silicon carbide, each having a different conduction type. A first and a second contact region serve for contact-connection. The first contact region and the second contact region have an at least approximately identical material composition which is practically homogeneous within the respective contact region. A method is provided for contact-connecting n-conducting and p-conducting silicon carbide, in each case with at least approximately identical material.Type: GrantFiled: December 8, 2000Date of Patent: December 23, 2003Assignee: SciCED Electronics Development GmbH & Co. KGInventors: Peter Friedrichs, Dethard Peters, Reinhold Schörner
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Publication number: 20030146437Abstract: A semiconductor configuration with an ohmic contact-connection includes a p-conducting semiconductor region made of silicon carbide. A p-type contact region serves for the contact-connection. The p-type contact region is composed of a material containing at least nickel and aluminum. A substantially uniform material composition is present in the entire p-type contact region. A method for contact-connecting p-conducting silicon carbide with a material containing at least nickel and aluminum is also provided. The two components nickel and aluminum are applied simultaneously on the p-conducting semiconductor region.Type: ApplicationFiled: March 7, 2003Publication date: August 7, 2003Applicant: SiCED Electronics Development GmbH & Co. KGInventors: Peter Friedrichs, Dethard Peters, Reinhold Schorner