Abstract: Compact systems, compact devices and methods are provided to sense changes in luminescence due to environmental influences on a luminescent material. Such systems, devices and methods may be implemented in a compact device, e.g., an integrated circuit package, which may be incorporated into or attached to a device, such as a smartphone, watch, flashlight, vehicle, etc. The systems, devices, and methods described herein are useful in sensing luminescence, as well as changes in luminescence that are indicative of environmental influences, such as the presence and concentration of a gas or chemical, ambient temperature, pressure, light, etc., in an area surrounding a luminescent material included in a compact device.

Abstract: Embedded Wafer-Level Packaging (eWLP) methods and optoelectronic devices, packages and assemblies made by the eWLP methods are described. The eWLP methods allow electrical interconnections to be easily and economically made to the back sides of the chips of the eWLP wafer using eWLP wafer-level processes, thereby eliminating the need to use TMVs or TSVs to make such interconnections. The eWLP methods also allow thermal and optical interconnections between the back side and the front side of the eWLP wafer to be easily and economically made. In addition, the eWLP methods allow electrical and optical interfaces to be formed on the front side and/or on the back side of the eWLP wafer. The eWLP methods may be used to form a variety of very thin optoelectronic devices, packages and assemblies having a various useful configurations with high volume, yield and throughput.

Abstract: Embedded Wafer-Level Packaging (eWLP) devices, packages and assemblies and methods of making them are provided. The eWLP methods allow back side electrical and/or thermal connections to be easily and economically made at the eWLP wafer level without having to use thru-mold vias (TMVs) or thru-silicon vias (TSVs) to make such connections. In order to create TMVs, processes such as reactive ion etching or laser drilling followed metallization are needed, which present difficulties and increase costs. In addition, the eWLP methods allow electrical and optical interfaces to be easily and economically formed on the front side and/or on the back side of the eWLP wafer, which allows the eWLP methods to be used to form optoelectronic devices having a variety of useful configurations.

Abstract: Embedded Wafer-Level Packaging (eWLP) devices, packages and assemblies and methods of making them are provided. The eWLP methods allow back side electrical and/or thermal connections to be easily and economically made at the eWLP wafer level without having to use thru-mold vias (TMVs) or thru-silicon vias (TSVs) to make such connections. In order to create TMVs, processes such as reactive ion etching or laser drilling followed metallization are needed, which present difficulties and increase costs. In addition, the eWLP methods allow electrical and optical interfaces to be easily and economically formed on the front side and/or on the back side of the eWLP wafer, which allows the eWLP methods to be used to form optoelectronic devices having a variety of useful configurations.

Abstract: Methods are provided for making embedded Wafer-Level Packaging (eWLP) devices, packages and assemblies. The eWLP methods allow back side electrical and/or thermal connections to be easily and economically made at the eWLP wafer level without having to use thru-mold vias (TMVs) or thru-silicon vias (TSVs) to make such connections. In order to create TMVs, processes such as reactive ion etching or laser drilling followed metallization are needed, which present difficulties and increase costs. In addition, the eWLP methods allow electrical and optical interfaces to be easily and economically formed on the front side and/or on the back side of the eWLP wafer, which allows the eWLP methods to be used to form optoelectronic devices having a variety of useful configurations.

Abstract: Compact systems, compact devices and methods are provided to sense changes in luminescence due to environmental influences on a luminescent material. Such systems, devices and methods may be implemented in a compact device, e.g., an integrated circuit package, which may be incorporated into or attached to a device, such as a smartphone, watch, flashlight, vehicle, etc. The systems, devices, and methods described herein are useful in sensing luminescence, as well as changes in luminescence that are indicative of environmental influences, such as the presence and concentration of a gas or chemical, ambient temperature, pressure, light, etc., in an area surrounding a luminescent material included in a compact device.

Abstract: Methods are provided for making embedded Wafer-Level Packaging (eWLP) devices, packages and assemblies. The eWLP methods allow back side electrical and/or thermal connections to be easily and economically made at the eWLP wafer level without having to use thru-mold vias (TMVs) or thru-silicon vias (TSVs) to make such connections. In order to create TMVs, processes such as reactive ion etching or laser drilling followed metallization are needed, which present difficulties and increase costs. In addition, the eWLP methods allow electrical and optical interfaces to be easily and economically formed on the front side and/or on the back side of the eWLP wafer, which allows the eWLP methods to be used to form optoelectronic devices having a variety of useful configurations.

Abstract: Embedded Wafer-Level Packaging (eWLP) methods and optoelectronic devices, packages and assemblies made by the eWLP methods are described. The eWLP methods allow electrical interconnections to be easily and economically made to the back sides of the chips of the eWLP wafer using eWLP wafer-level processes, thereby eliminating the need to use TMVs or TSVs to make such interconnections. The eWLP methods also allow thermal and optical interconnections between the back side and the front side of the eWLP wafer to be easily and economically made. In addition, the eWLP methods allow electrical and optical interfaces to be formed on the front side and/or on the back side of the eWLP wafer. The eWLP methods may be used to form a variety of very thin optoelectronic devices, packages and assemblies having a various useful configurations with high volume, yield and throughput.