Patents by Inventor Detlef Gador

Detlef Gador has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6793778
    Abstract: A method for fabricating a transducer with landing pads without edge fences is described. Preferably an adhesion layer and then the pad layer are deposited in voids in a photoresist. The thickness of the masking layer on the surface of the pad layer should be sufficient to protect pad layer during the subsequent ashing step, but the thickness of the masking material at the sidewalls on the pad layer fences should be thin enough so that the fences are not protected during ashing. After stripping the photoresist material, the structure is ashed preferably by an oxygen-containing plasma. The ashing process, with assistance from mechanical abrasion, removes the fence structures on the pad layer, since the thinner masking layer at the sidewalls provides less protection to the fence structures than is provided to the bulk of the pad layer where the masking layer is thicker.
    Type: Grant
    Filed: July 15, 2002
    Date of Patent: September 21, 2004
    Assignee: Hitachi Global Storage Technologies Netherlands N.V.
    Inventors: Detlef Gador, Cherngye Hwang, Eun Kyoung Row, Ning Shi
  • Publication number: 20040007454
    Abstract: A method for fabricating a transducer with landing pads without edge fences is described. The pad shape and location are defined by voids in a photoresist formed using prior art methods. Preferably an adhesion layer and then the pad layer are deposited in the voids. A masking layer is preferably vertically deposited on the pad layer to be thinner on the pad material on the sidewall to provide anisotropic protection during the subsequent ashing step. A vertical deposition process minimizes the buildup of the masking layer material on the sidewall of the void in the resist which already contains the fence structures on the sidewall from the previous deposition. The thickness of the masking layer on the surface of the pad layer should be sufficient to protect pad layer during the subsequent ashing step, but the thickness of the masking material at the sidewalls on the pad layer fences should be thin enough so that the fences are not protected during ashing.
    Type: Application
    Filed: July 15, 2002
    Publication date: January 15, 2004
    Inventors: Detlef Gador, Cherngye Hwang, Eun Kyoung Row, Ning Shi