Patents by Inventor Detlef Hommel

Detlef Hommel has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for wafer bonding (A1, In, Ga)N and Zn(S, Se) for optoelectronic applications
    Patent number: 7344958
    Abstract: A method for producing a wafer bonded structure between (Al, In, Ga)N and Zn(S,Se). A highly reflective and conductive distributed Bragg reflector (DBR) for relatively short optical wave lengths can be fabricated using Zn(S,Se) and MgS/(Zn, Cd)Se materials. Using wafer bonding techniques, these high-quality DBR structures can be combined with a GaN-based optical device structure.
    Type: Grant
    Filed: July 6, 2005
    Date of Patent: March 18, 2008
    Assignees: The Regents of the University of California, Universitaet Bremen, Japan Science and Technology Agency
    Inventors: Akihiko Murai, Lee McCarthy, Umesh K. Mishra, Steven P. DenBaars, Carsten Kruse, Stephan Figge, Detlef Hommel
  • Method for wafer bonding (Al, In, Ga)N and Zn(S, Se) for optoelectronic applications
    Publication number: 20060009006
    Abstract: A method for producing a wafer bonded structure between (Al, In, Ga)N and Zn(S,Se). A highly reflective and conductive distributed Bragg reflector (DBR) for relatively short optical wave lengths can be fabricated using Zn(S,Se) and MgS/(Zn, Cd)Se materials. Using wafer bonding techniques, these high-quality DBR structures can be combined with a GaN-based optical device structure.
    Type: Application
    Filed: July 6, 2005
    Publication date: January 12, 2006
    Applicant: The Regents of the University of California
    Inventors: Akihiko Murai, Lee McCarthy, Umesh Mishra, Steven DenBaars, Carsten Kruse, Stephan Figge, Detlef Hommel
  • Semiconductor component for generating polychromatic electromagnetic radiation
    Patent number: 6900466
    Abstract: A semiconductor component for generating a polychromatic electromagnetic radiation has a semiconductor chip with a first semiconductor layer and a second semiconductor layer, which is provided adjacent to the first semiconductor layer and has an electroluminescent region. The electroluminescent region emits electromagnetic radiation of a first wavelength. The first semiconductor layer includes a material which, when excited with the electromagnetic radiation of the first wavelength, re-emits radiation with a second wavelength which is longer than the first wavelength.
    Type: Grant
    Filed: July 25, 2001
    Date of Patent: May 31, 2005
    Assignee: Osram GmbH
    Inventors: Detlef Hommel, Helmut Wenisch
  • Semiconductor component for generating polychromatic electromagnetic radiation
    Publication number: 20020008244
    Abstract: A semiconductor component for generating a polychromatic electromagnetic radiation has a semiconductor chip with a first semiconductor layer and a second semiconductor layer, which is provided adjacent to the first semiconductor layer and has an electroluminescent region. The electroluminescent region emits electromagnetic radiation of a first wavelength. The first semiconductor layer includes a material which, when excited with the electromagnetic radiation of the first wavelength, re-emits radiation with a second wavelength which is longer than the first wavelength.
    Type: Application
    Filed: July 25, 2001
    Publication date: January 24, 2002
    Inventors: Detlef Hommel, Helmut Wenisch