Abstract: The invention relates to a semiconductor component which is capable of blocking such as an (IGBT), a thyristor, a GTO or diodes, especially schottky diodes. An insulator profile section (10a, 10b, 10c, 10d, 11) provided in the border area of an anode metallic coating (1, 31) is fixed (directly in the edge area) on the substrate (9) of the component. The insulator profile has a curved area (KB) and a base area (SB), said curved area having a surface (OF) which begins flat and curves outward and upward in a steadily increasing manner. A metallic coating (MET1; 30a, 30b, 30c, 30d, 31b) is deposited on the surface (OF). Said coating directly follows the surface curvature and laterally extends the inner anode metallic coating. The upper end of the curved metallic coating (MET1; 30a, 30b . . . ) is distanced and insulated from one of these surrounding outer metallic coatings (MET2; 3) by the surrounding base area (SB) of the insulator profile (10a, . . .

Abstract: An electrical component contains a pad formed of an electrically conductive material. The pad serves for the application of a contact element and is complemented by an electrically conductive edge strip. The pad and the edge strip are isolated from one another. The component which includes the pad on which misalignments or deformations of contact elements which occur in a functionality test can be detected easily and directly without additional analytical devices.

Abstract: A Semiconductor component, such as an IGBT, a thyristor, a GTO or a diode, and especially a Schottky diode is provided that is capable of blocking for producing a termination portion of a semiconductor component. An insulator profile of an insulator portion includes a curved surface, which is free of steps and is produced by gray-tone lithography in the termination portion of an anode. The device also includes a substrate that is covered with an insulating layer having a thickness of between 0.5 &mgr;m and 15 &mgr;m, an insulator layer having a thickness is covered with a photosensitive layer (photoresist layer) where the photoresist layer is exposed through a mask, which changes in its gray-tone value in accordance with the course of curvature of the surface of at least one insulator profile, and is subsequently structured to form at least one resist remainder.

Abstract: An electrical component contains a pad formed of an electrically conductive material. The pad serves for the application of a contact element and is complemented by an electrically conductive edge strip. The pad and the edge strip are isolated from one another. The component which includes the pad on which misalignments or deformations of contact elements which occur in a functionality test can be detected easily and directly without additional analytical devices.

Abstract: The invention relates to a semiconductor component with a base zone (3) extending in a lateral direction (x) of a first type of conductivity (n) and at least two contact areas (1, 2) for connection to electric contacts (A, K) which zones are separate at least from the base zone (3) in the lateral direction (x). A base material of the base zone (3) is silicon (Si) and has a dopant concentration of 1012 to 5×1014 cm−3 and a respective dopant concentration (NA) along a lateral direction (x) of less than 2×1012 cm−2 determined by integrating the dopant concentration across the vertical thickness of the base area (3). The semiconductor component further comprises compensation layers (6, 6a, 6b, 6c, 7, 7a, 7b, 7c, 8) of a second type of conductivity (p) opposed to the first type of conductivity. Said layers extend inside or outside the base area in a lateral direction (x).

Abstract: The invention relates to a semiconductor component which is capable of blocking such as an (IGBT), a thyristor, a GTO or diodes, especially schottky diodes. An insulator profile section (10a, 10b, 10c, 10d, 11) provided in the border area of an anode metallic coating (1, 31) is fixed (directly in the edge area) on the substrate (9) of the component. The insulator profile has a curved area (KB) and a base area (SB), said curved area having a surface (OF) which begins flat and curves outward and upward in a steadily increasing manner. A metallic coating (MET1; 30a, 30b, 30c, 30d, 31b) is deposited on the surface (OF). Said coating directly follows the surface curvature and laterally extends the inner anode metallic coating. The upper end of the curved metallic coating (MET1; 30a, 30b . . . ) is distanced and insulated from one of these surrounding outer metallic coatings (MET2; 3) by the surrounding base area (SB) of the insulator profile (10a, . . .

Abstract: The invention relates to a semiconductor component which is capable of blocking such as an (IGBT), a thyristor, a GTO or diodes, especially schottky diodes. An insulator profile section (10a, 10b, 10c, 10d, 11) provided in the border area of an anode metallic coating (1, 31) is fixed (directly in the edge area) on the substrate (9) of the component. The insulator profile has a curved area (KB) and a base area (SB), said curved area having a surface (OF) which begins flat and curves outward and upward in a steadily increasing manner. A metallic coating MET1; 30a, 30b, 30c, 30d, 31b) is deposited on the surface (OF). Said coating directly follows the surface curvature and laterally extends the inner anode metallic coating. The upper end of the curved metallic coating (MET1; 30a, 30b . . . ) is distanced and insulated from one of these surrounding outer metallic coatings (MET2; 3) by the surrounding base area (SB) of the insulator profile (10a, . . .