Patents by Inventor Detlef Nagel

Detlef Nagel has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6956249
    Abstract: The invention relates to a semiconductor component which is capable of blocking such as an (IGBT), a thyristor, a GTO or diodes, especially schottky diodes. An insulator profile section (10a, 10b, 10c, 10d, 11) provided in the border area of an anode metallic coating (1, 31) is fixed (directly in the edge area) on the substrate (9) of the component. The insulator profile has a curved area (KB) and a base area (SB), said curved area having a surface (OF) which begins flat and curves outward and upward in a steadily increasing manner. A metallic coating (MET1; 30a, 30b, 30c, 30d, 31b) is deposited on the surface (OF). Said coating directly follows the surface curvature and laterally extends the inner anode metallic coating. The upper end of the curved metallic coating (MET1; 30a, 30b . . . ) is distanced and insulated from one of these surrounding outer metallic coatings (MET2; 3) by the surrounding base area (SB) of the insulator profile (10a, . . .
    Type: Grant
    Filed: September 23, 2003
    Date of Patent: October 18, 2005
    Assignee: Fraunhoffer-Gesellschaft Zur Foerderung Der Angewandten Forschung E.V.
    Inventors: Roland Sittig, Detlef Nagel, Ralf-Ulrich Dudde, Bernd Wagner, Klaus Reimer
  • Patent number: 6791349
    Abstract: An electrical component contains a pad formed of an electrically conductive material. The pad serves for the application of a contact element and is complemented by an electrically conductive edge strip. The pad and the edge strip are isolated from one another. The component which includes the pad on which misalignments or deformations of contact elements which occur in a functionality test can be detected easily and directly without additional analytical devices.
    Type: Grant
    Filed: March 27, 2003
    Date of Patent: September 14, 2004
    Assignee: Infineon Technologies AG
    Inventors: Detlef Nagel, Reinhart Buhr, Hanns-Georg Ochsenk├╝hn, Jens Paul
  • Publication number: 20040129993
    Abstract: A Semiconductor component, such as an IGBT, a thyristor, a GTO or a diode, and especially a Schottky diode is provided that is capable of blocking for producing a termination portion of a semiconductor component. An insulator profile of an insulator portion includes a curved surface, which is free of steps and is produced by gray-tone lithography in the termination portion of an anode. The device also includes a substrate that is covered with an insulating layer having a thickness of between 0.5 &mgr;m and 15 &mgr;m, an insulator layer having a thickness is covered with a photosensitive layer (photoresist layer) where the photoresist layer is exposed through a mask, which changes in its gray-tone value in accordance with the course of curvature of the surface of at least one insulator profile, and is subsequently structured to form at least one resist remainder.
    Type: Application
    Filed: September 23, 2003
    Publication date: July 8, 2004
    Inventors: Roland Sittig, Detlef Nagel, Ralf-Ulrich Dudde, Bernd Wagner, Klaus Reimer
  • Publication number: 20030184333
    Abstract: An electrical component contains a pad formed of an electrically conductive material. The pad serves for the application of a contact element and is complemented by an electrically conductive edge strip. The pad and the edge strip are isolated from one another. The component which includes the pad on which misalignments or deformations of contact elements which occur in a functionality test can be detected easily and directly without additional analytical devices.
    Type: Application
    Filed: March 27, 2003
    Publication date: October 2, 2003
    Inventors: Detlef Nagel, Reinhart Buhr, Hanns-Georg Ochsenkuhn, Jens Paul
  • Patent number: 6525374
    Abstract: The invention relates to a semiconductor component with a base zone (3) extending in a lateral direction (x) of a first type of conductivity (n) and at least two contact areas (1, 2) for connection to electric contacts (A, K) which zones are separate at least from the base zone (3) in the lateral direction (x). A base material of the base zone (3) is silicon (Si) and has a dopant concentration of 1012 to 5×1014 cm−3 and a respective dopant concentration (NA) along a lateral direction (x) of less than 2×1012 cm−2 determined by integrating the dopant concentration across the vertical thickness of the base area (3). The semiconductor component further comprises compensation layers (6, 6a, 6b, 6c, 7, 7a, 7b, 7c, 8) of a second type of conductivity (p) opposed to the first type of conductivity. Said layers extend inside or outside the base area in a lateral direction (x).
    Type: Grant
    Filed: July 16, 2001
    Date of Patent: February 25, 2003
    Assignee: Infineon Technologies AG
    Inventors: Roland Sittig, Detlef Nagel
  • Publication number: 20020140046
    Abstract: The invention relates to a semiconductor component which is capable of blocking such as an (IGBT), a thyristor, a GTO or diodes, especially schottky diodes. An insulator profile section (10a, 10b, 10c, 10d, 11) provided in the border area of an anode metallic coating (1, 31) is fixed (directly in the edge area) on the substrate (9) of the component. The insulator profile has a curved area (KB) and a base area (SB), said curved area having a surface (OF) which begins flat and curves outward and upward in a steadily increasing manner. A metallic coating (MET1; 30a, 30b, 30c, 30d, 31b) is deposited on the surface (OF). Said coating directly follows the surface curvature and laterally extends the inner anode metallic coating. The upper end of the curved metallic coating (MET1; 30a, 30b . . . ) is distanced and insulated from one of these surrounding outer metallic coatings (MET2; 3) by the surrounding base area (SB) of the insulator profile (10a, . . .
    Type: Application
    Filed: April 22, 2002
    Publication date: October 3, 2002
    Inventors: Roland Sittig, Detlef Nagel, Ralf-Ulrich Dudde, Bernd Wagner, Klaus Reimer
  • Patent number: 6426540
    Abstract: The invention relates to a semiconductor component which is capable of blocking such as an (IGBT), a thyristor, a GTO or diodes, especially schottky diodes. An insulator profile section (10a, 10b, 10c, 10d, 11) provided in the border area of an anode metallic coating (1, 31) is fixed (directly in the edge area) on the substrate (9) of the component. The insulator profile has a curved area (KB) and a base area (SB), said curved area having a surface (OF) which begins flat and curves outward and upward in a steadily increasing manner. A metallic coating MET1; 30a, 30b, 30c, 30d, 31b) is deposited on the surface (OF). Said coating directly follows the surface curvature and laterally extends the inner anode metallic coating. The upper end of the curved metallic coating (MET1; 30a, 30b . . . ) is distanced and insulated from one of these surrounding outer metallic coatings (MET2; 3) by the surrounding base area (SB) of the insulator profile (10a, . . .
    Type: Grant
    Filed: August 23, 2000
    Date of Patent: July 30, 2002
    Assignee: Fraunhofer-Gesellschaft zur Foerderung der angewandten Forschung e.V.
    Inventors: Roland Sittig, Detlef Nagel, Ralf-Ulrich Dudde, Bernd Wagner, Klaus Reimer