Abstract: A separator system for separating drops and solid particles from an air inlet flow. The separator system includes an air inlet channel opening and a separating body which is internally installed. The separating body is arranged downstream of the air inlet channel opening so as to completely cover the air inlet channel opening and to extend flat in a mounting plane. The separating body is provided as a modular design and includes, in the mounting plane, at least one first separating part, and at least one second separating part which is arranged to be separate from the at least one first separating part.

Abstract: A separator system for separating drops and solid particles from an air inlet flow. The separator system includes an air inlet channel opening and a separating body which is internally installed. The separating body is arranged downstream of the air inlet channel opening so as to completely cover the air inlet channel opening and to extend flat in a mounting plane. The separating body is provided as a modular design and includes, in the mounting plane, at least one first separating part, and at least one second separating part which is arranged to be separate from the at least one first separating part.

Abstract: A method includes: forming first and second trenches in a semiconductor body; forming a first material layer on the semiconductor body in the first and second trenches such that a first residual trench remains in the first trench and a second residual trench remains in the second trench; removing the first material from the second trench; and forming a second material layer on the first material layer in the first residual trench and on the semiconductor body in the second trench. The first material layer includes dopants of a first doping type and the second material layer includes dopants of a second doping type. The method further includes diffusing dopants from the first material layer in the first trench into the semiconductor body to form a first doped region, and from the second material layer in the second trench into the semiconductor body to form a second doped region.

Abstract: A method includes: forming first and second trenches in a semiconductor body; forming a first material layer on the semiconductor body in the first and second trenches such that a first residual trench remains in the first trench and a second residual trench remains in the second trench; removing the first material from the second trench; and forming a second material layer on the first material layer in the first residual trench and on the semiconductor body in the second trench. The first material layer includes dopants of a first doping type and the second material layer includes dopants of a second doping type. The method further includes diffusing dopants from the first material layer in the first trench into the semiconductor body to form a first doped region, and from the second material layer in the second trench into the semiconductor body to form a second doped region.

Abstract: A semiconductor device and a method of manufacturing the same is provided. The semiconductor device including a transistor cell in a semiconductor substrate having a first main surface. The transistor cell includes a gate electrode in a gate trench in the first main surface adjacent to a body region. A longitudinal axis of the gate trench extends in a first direction parallel to the first main surface. A source region, a body region and a drain region are disposed along the first direction. A source contact comprises a first source contact portion and a second source contact portion. The second source contact portion is disposed at a second main surface of the semiconductor substrate. The first source contact portion includes a source conductive material in direct contact with the source region and a portion of the semiconductor substrate arranged between the source conductive material and the second source contact portion.

Abstract: A method of forming an integrated circuit includes forming gate trenches in the first main surface of a semiconductor substrate, the gate trenches being formed so that a longitudinal axis of the gate trenches runs in a first direction parallel to the first main surface. The method further includes forming a source contact groove running in a second direction parallel to the first main surface, the second direction being perpendicular to the first direction, the source contact groove extending along the plurality of gate trenches, forming a source region including performing a doping process to introduce dopants through a sidewall of the source contact groove, and filling a sacrificial material in the source contact groove. The method also includes, thereafter, forming components of the logic circuit element, thereafter, removing the sacrificial material from the source contact groove, and filling a source conductive material in the source contact groove.

Abstract: A semiconductor device and a method of manufacturing the same is provided. The semiconductor device including a transistor cell in a semiconductor substrate having a first main surface. The transistor cell includes a gate electrode in a gate trench in the first main surface adjacent to a body region. A longitudinal axis of the gate trench extends in a first direction parallel to the first main surface. A source region, a body region and a drain region are disposed along the first direction. A source contact comprises a first source contact portion and a second source contact portion. The second source contact portion is disposed at a second main surface of the semiconductor substrate. The first source contact portion includes a source conductive material in direct contact with the source region and a portion of the semiconductor substrate arranged between the source conductive material and the second source contact portion.

Abstract: A semiconductor device is provided including a transistor cell in a semiconductor substrate having a first main surface. The transistor cell includes a gate electrode in a gate trench in the first main surface adjacent to a body region. A longitudinal axis of the gate trench extends in a first direction parallel to the first main surface. A source region, a body region and a drain region are disposed along the first direction. A source contact comprises a first source contact portion and a second source contact portion. The second source contact portion is disposed at a second main surface of the semiconductor substrate. The first source contact portion includes a source conductive material in direct contact with the source region and a portion of the semiconductor substrate arranged between the source conductive material and the second source contact portion.

Abstract: A method of forming an integrated circuit includes forming gate trenches in the first main surface of a semiconductor substrate, the gate trenches being formed so that a longitudinal axis of the gate trenches runs in a first direction parallel to the first main surface. The method further includes forming a source contact groove running in a second direction parallel to the first main surface, the second direction being perpendicular to the first direction, the source contact groove extending along the plurality of gate trenches, forming a source region including performing a doping process to introduce dopants through a sidewall of the source contact groove, and filling a sacrificial material in the source contact groove. The method also includes, thereafter, forming components of the logic circuit element, thereafter, removing the sacrificial material from the source contact groove, and filling a source conductive material in the source contact groove.

Abstract: A semiconductor device is provided including a transistor cell in a semiconductor substrate having a first main surface. The transistor cell includes a gate electrode in a gate trench in the first main surface adjacent to a body region. A longitudinal axis of the gate trench extends in a first direction parallel to the first main surface. A source region, a body region and a drain region are disposed along the first direction. A source contact comprises a first source contact portion and a second source contact portion. The second source contact portion is disposed at a second main surface of the semiconductor substrate. The first source contact portion includes a source conductive material in direct contact with the source region and a portion of the semiconductor substrate arranged between the source conductive material and the second source contact portion.

Abstract: A separation system for separating drops from a flue gas flow for installation in a gas scrubber of a power plant or an incineration plant includes a front coarse separator arranged in a gas flow direction, and a rear final separator arranged in the gas flow direction. The rear final separator is provided to have a lower separation performance in comparison with an upstream separator in the gas flow direction and/or is provided as a tube separator.

Abstract: A suspension solution filter sieve basket for use in a flue gas desulfurization includes holes which widen in a flow direction of a suspension solution.

Abstract: A separation system for separating drops from a flue gas flow for installation in a gas scrubber of a power plant or an incineration plant includes a front coarse separator arranged in a gas flow direction, and a rear final separator arranged in the gas flow direction. The rear final separator is provided to have a lower separation performance in comparison with an upstream separator in the gas flow direction and/or is provided as a tube separator.

Abstract: A suspension solution filter sieve basket for use in a flue gas desulfurization includes holes which widen in a flow direction of a suspension solution.

Abstract: The invention is directed at a mist eliminator for horizontal gas flow applications which is built as a combination of tubular and vane type elements and which is used to separate droplets from flue gas flows in a flue gas desulphurization (FGD).

Abstract: A feature is inscribed in a major surface of a microelectronic workpiece having a material property expressed as a reference coefficient value. The feature includes a first material having a first coefficient value for the material property and a second material having a second coefficient value for the material property. The first coefficient value is different from the reference coefficient value different from the first coefficient value and the second coefficient value is different from the first coefficient value. The first and second materials behave as an aggregate having an aggregate coefficient value for the material property between the first coefficient value and the reference coefficient value.

Abstract: A droplet separator installation for gas washers, cooling towers etc. is described according to which a row of parallel droplet separator profiles is supported at a support construction by means of an intermediate construction. The intermediate construction serves for the support and the stabilization of the droplet separator profile row and for the support of a rinsing means for rinsing the droplet separator profile row.

Abstract: The present invention provides a manufacturing method for forming an integrated circuit device and to a corresponding integrated circuit device. The manufacturing method for forming an integrated circuit device comprises the steps of: forming a first level on a substrate; forming a second level above the first level; forming a cap layer on the second level which covers a first region of the level and leaves a second region uncovered; and simultaneously etching a first contact hole in the first region and a second contact hole in the second region such that the etching is selective to the cap layer in the second region and proceeds to a greater depth in the first region.

Abstract: One implementation is a method for fabricating a semiconductor on a substrate. A first layer is formed on the substrate. An implanted pattern is introduced into the first layer by implanting using a structured implantation mask arranged over the first layer. A structured second layer is formed on the first layer after removing the implantation mask. A first pattern is generated in the substrate using the second layer as a mask. The first layer is developed with regard to the implanted pattern. A second pattern is generated in the substrate using the first layer as a mask.

Abstract: The invention is directed at a mist eliminator for horizontal gas flow applications which is built as a combination of tubular and vane type elements and which is used to separate droplets from flue gas flows in a flue gas desulphurisation (FGD).