Abstract: A method for depositing a monocrystalline semiconductor layer consisting of a first element and a second element, wherein the first elements is fed as part of a hydride, and the second element is fed as part of a halide, together with a carrier gas, into a process chamber of a reactor, wherein radicals are produced from the hydride at a distance away from a surface of a semiconductor substrate, wherein at a temperature below a decomposition temperature of the radicals, at a total pressure of the gas in the process chamber sufficiently low to avoid a reverse reaction of the radicals in the gas phase the radicals and the halide are brought to the surface of the semiconductor substrate which is heated to a substrate temperature lower than the decomposition temperature, wherein heat released during a first exothermic chemical reaction drives a second endothermic chemical reaction.

Abstract: A method for monolithically depositing a monocrystalline IV-IV layer that glows when excited and that is composed of a plurality of elements of the IV main group, in particular a GeSn or Si—GeSn layer, the IV-IV layer having a dislocation density less than 6 cm?2, on an IV substrate, in particular a silicon or germanium substrate, including the following steps: providing a hydride of a first IV element (A), such as Ge2H6 or Si2H6; providing a halide of a second IV element (B), such as SnCl4; heating the substrate to a substrate temperature that is less than the decomposition temperature of the pure hydride or of a radical formed therefrom and is sufficiently high that atoms of the first element (A) and of the second element (B) are integrated into the surface in crystalline order, wherein the substrate temperature lies, in particular, in a range between 300° C. and 475° C.

Abstract: A method for monolithically depositing a monocrystalline IV-IV layer that glows when excited and that is composed of a plurality of elements of the IV main group, in particular a GeSn or Si—GeSn layer, the IV-IV layer having a dislocation density less than 6 cm?2, on an IV substrate, in particular a silicon or germanium substrate, including the following steps: providing a hydride of a first IV element (A), such as Ge2H6 or Si2H6; providing a halide of a second IV element (B), such as SnCl4; heating the substrate to a substrate temperature that is less than the decomposition temperature of the pure hydride or of a radical formed therefrom and is sufficiently high that atoms of the first element (A) and of the second element (B) are integrated into the surface in crystalline order, wherein the substrate temperature lies, in particular, in a range between 300° C. and 475° C.

Abstract: Method for making a semiconductor structure is proposed. It comprises the steps: —providing a base layer (10) having a first lattice constant, —forming buried islands on the base layer (10) having a second lattice constant that is smaller or larger than the first lattice constant, —at least partially covering the base layer (10) and the buried islands with a cover layer (14), whereby the cover layer (14) has a locally increased or reduced lattice constant in areas above the buried islands, —growing small islands (15) on the areas of the cover layer (14) with locally increased or reduced lattice constant, —depositing a thin layer (16) at least partially covering the cover layer (14) and the small islands (15), —at least partially removing the small islands (15) to provide for an opening (17) being positioned exactly above the buried islands.

Abstract: Method for making a semiconductor structure is proposed. It comprises the steps: -providing a base layer (10) having a first lattice constant, -forming buried islands on the base layer (10) having a second lattice constant that is smaller or larger than the first lattice constant, -at least partially covering the base layer (10) and the buried islands with a cover layer (14), whereby the cover layer (14) has a locally increased or reduced lattice constant in areas above the buried islands, -growing small islands (15) on the areas of the cover layer (14) with locally increased or reduced lattice constant, -depositing a thin layer (16) at least partially covering the cover layer (14) and the small islands (15), -at least partially removing the small islands (15) to provide for an opening (17) being positioned exactly above the buried islands.