Abstract: An image sensor for an image processing apparatus having a color filter array with open window cells alternating with single color filter cells includes a lens array containing a plurality of microlenses, a color filter array having a plurality of open window cells and color filter cells, each corresponding to one microlens. The image sensor also includes a protection layer, and a pixel sensor array having a first photosensor sensing a first light passed through each color filter cell, a second photosensor formed under the first photosensor, sensing a second light passed through each color filter cell, a third photosensor sensing a third light passed through each open window cell, and a fourth photosensor formed under the third photosensor, sensing a fourth light passed through each open window cell.

Abstract: In a unit pixel of a CMOS image sensor which compensates for a dark current generated in a photo diode to enhance its driving range, the photo diode generates a charge in accordance with a received light amount. A drive transistor has a gate for receiving the charge in the photo diode to output as an electrical signal, and a drain to which a power voltage is applied. A saturation detector receives a gate voltage of the drive transistor and judges the drive transistor saturated if an output voltage is smaller than a preset reference voltage. A switch connects or disconnects between the power voltage and the gate of the drive transistor in response to the judgment of the saturation detector.

Abstract: In a CMOS image sensor of the invention, a dynamic range is varied at a per-pixel level by a light amount to prevent saturation without degrading color reproduction of an overall image. A photo diode generates charges in accordance with a received light amount. A drive transistor amplifies the charges generated in the photodiode at a given gain. Further, a saturation detector receives an output voltage from the drive transistor and judges the image sensor saturated if the output voltage is beyond a limited level. A switch switches on/off in response to the judgment of the saturation detector. Also, a plurality of floating diffusions store the charges of the photodiode transferred through the switch. The floating diffusions are selectively connected to both the photodiode and a gate of the drive transistor at on/off the switch.

Abstract: The invention relates a photodiode device and a photodiode array using the same capable of detecting short and long wavelengths of visible light at a high efficiency. The photodiode device includes: a first conductivity type semiconductor substrate; a second conductivity type buried layer, an intrinsic semiconductor layer and a first conductivity type semiconductor layer formed on the semiconductor substrate in their order; and a second conductivity type well layer formed on the first conductivity type semiconductor layer. The second conductivity type buried layer, the intrinsic semiconductor layer and the first conductivity type semiconductor layer form a pin junction diode for detecting the long wavelength of visible light, and the first conductivity type semiconductor layer and the second conductivity type well layer form a p-n junction diode for detecting a short wavelength of light.

Abstract: Disclosed is a circuit for compensating for an offset voltage of a monitoring photodiode. After the offset voltage is measured in a photodiode test, current source and offset resistors are added according to the measured resistances, thereby compensating for the offset voltage.

Abstract: The present invention relates to an active pixel array of a CMOS image sensor. The active pixel array includes a pixel sensor array in which a pixel sensor which detects first and second light signals, of which the wavelengths are different from each other, among all wavelengths of light signals so as to generate current and voltage signals and a pixel sensor which detects a third light signal with a predetermined wavelength so as to generate a current or voltage signal are alternately arranged; and a color filter array that is formed on the pixel sensor array and in which a filter which transmits all wavelengths of light signals and a filter which transmits the third signal with a predetermined wavelength are alternately arranged.

Abstract: A CMOS image sensor has a function to compensate a photodetector pixel from a dark current by using a dark pixel. In the CMOS image sensor, the photodetector pixel includes a first reset transistor with a drain connected to a supply voltage and a photodetector diode connected between a source of the first reset transistor and a ground. The dark pixel includes a mirror transistor with a drain connected to the supply voltage and a gate and source connected to a gate of the first reset transistor and a dark photodiode shielded from external light. The dark photodiode is connected between the source of the mirror diode and the ground. The dark pixel provides a current having a magnitude equal with that of a dark current flowing through the dark photodiode to the photodetector diode. This delays the saturation rate of the CMOS image sensor pixel and enhances the dynamic range thereof.

Abstract: The invention provides a unit pixel of a CMOS image sensor which compensates for a dark current generated in a photo diode to enhance its driving range. In the unit pixel, a photo diode generates a charge in accordance with a received light amount. A drive has a gate for receiving the charge in the photo diode to output as an electrical signal and a drain to which a power voltage is applied. Also, a saturation detector receives a gate voltage of the drive transistor and judges the drive transistor saturated if an output voltage is smaller than a preset reference voltage. In addition, a switch connects or disconnects between the power voltage and the gate of the drive transistor in response to the judgment of the saturation detector.

Abstract: In a CMOS image sensor of the invention, a dynamic range is varied at a per-pixel level by a light amount to prevent saturation without degrading color reproduction of an overall image. A photo diode generates charges in accordance with a received light amount. A drive transistor amplifies the charges generated in the photodiode at a given gain. Further, a saturation detector receives an output voltage from the drive transistor and judges the image sensor saturated if the output voltage is beyond a limited level. A switch switches on/off in response to the judgment of the saturation detector. Also, a plurality of floating diffusions store the charges of the photodiode transferred through the switch. The floating diffusions are selectively connected to both the photodiode and a gate of the drive transistor at on/off the switch.

Abstract: A current-voltage transforming circuit used with a photo detector integrated circuit includes a photo detector to detect a photo signal (laser beam signal) to generate a photo current, an amplifier to amplify the photo current, which corresponds to the photo signal, an emitter follower to receive an output of the amplifier, an output buffer to receive an output of the emitter follower, a current detecting limiter unit having an input terminal and an output terminal and turned on to generate a limiter current when the detected current outputted from the amplifier is greater than a predetermined current, and a feedback resistor connected between the photo detector and an output terminal of the output buffer.

Abstract: A current-voltage transforming circuit used with a photo detector integrated circuit includes a photo detector to detect a photo signal (laser beam signal) to generate a photo current, an amplifier to amplify the photo current, which corresponds to the photo signal, an emitter follower to receive an output of the amplifier, an output buffer to receive an output of the emitter follower, a current detecting limiter unit having an input terminal and an output terminal and turned on to generate a limiter current when the detected current outputted from the amplifier is greater than a predetermined current, and a feedback resistor connected between the photo detector and an output terminal of the output buffer.

Abstract: Disclosed are a photo diode sensing a short-wavelength light in a blue band, an opto-electronic integrated circuit device comprising the photo diode, and a method of manufacturing the photo diode. The method for manufacturing the photo diode, comprising the steps of: preparing a silicon substrate; forming a first conductive impurity region at a first region on the silicon substrate; forming a second conductive impurity region at a second region on the silicon substrate, said second region being separated from the first region; and forming a porous silicon layer by chemically etching a surface of the second conductive impurity region.