Abstract: A thin film transistor includes: a substrate; an oxide semiconductor layer disposed on the substrate; a source electrode and a drain electrode each connected to the oxide semiconductor layer and facing each other with respect to the oxide semiconductor layer; an insulating layer disposed on the oxide semiconductor layer; and a gate electrode disposed on the insulating layer. The insulating layer includes a first layer that includes silicon oxide (SiOx), a second layer that is a hydrogen blocking layer, and a third layer that includes silicon nitride (SiNx). The first, second and third layers are sequentially stacked.

Abstract: A display substrate and a method for manufacturing a display substrate are disclosed. In the method, a gate electrode is formed on a base substrate. An active pattern is formed using an oxide semiconductor. The active pattern partially overlaps the gate electrode. A first insulation layer pattern and a second insulation layer pattern are sequentially formed on the active pattern. The first insulation layer pattern and the second insulation layer pattern overlap the gate electrode. A third insulation layer is formed to cover the active pattern, the first insulation layer pattern and the second insulation layer pattern. Either the first insulation layer pattern or the second insulation layer pattern includes aluminum oxide. Forming the first insulation layer pattern and the second insulation layer pattern includes performing a backside exposure process using the gate electrode as an exposure mask.