Abstract: An organic light emitting diode display includes a substrate main body, a semiconductor layer and a first capacitor electrode on the substrate main body, bottom surfaces of the semiconductor layer and first capacitor electrode being substantially coplanar, and each of the semiconductor layer and first capacitor electrode including an impurity-doped polysilicon layer, a gate insulating layer on the semiconductor layer and the first capacitor electrode, a gate electrode on the semiconductor layer with the gate insulating layer therebetween, and a second capacitor electrode on the first capacitor electrode with the gate insulating layer therebetween, the second capacitor electrode including a convex electrode portion and a concave electrode portion, the concave electrode portion being thinner than each of the convex electrode portion and the gate electrode.

Abstract: A method of fabricating a display device is provided. The method includes providing a substrate having a pixel region and a circuit region located at the periphery of the pixel region. A first semiconductor layer and a second semiconductor layer are formed on the pixel region and on the circuit region, respectively. The first semiconductor layer may be selectively surface treated to increase the density of lattice defects in a surface of the first semiconductor layer.

Abstract: A method for manufacturing a thin film transistor includes: forming a source electrode and a drain electrode on a substrate by depositing a metal layer on the substrate at a first temperature and etching the metal layer; forming a protective layer on the source and drain electrodes; and performing a heat treatment on the protective layer at a second temperature higher than the first temperature.

Abstract: A flat panel display apparatus, including a substrate, a display unit disposed on the substrate, a first interconnecting line positioned on the substrate at an outer side of the display unit, a second interconnecting line located above the first interconnecting line, and at least two insulating layers interposed between the first and second interconnecting lines.

Abstract: An organic light emitting diode display includes a substrate main body, a semiconductor layer and a first capacitor electrode on the substrate main body, bottom surfaces of the semiconductor layer and first capacitor electrode being substantially coplanar, and each of the semiconductor layer and first capacitor electrode including an impurity-doped polysilicon layer, a gate insulating layer on the semiconductor layer and the first capacitor electrode, a gate electrode on the semiconductor layer with the gate insulating layer therebetween, and a second capacitor electrode on the first capacitor electrode with the gate insulating layer therebetween, the second capacitor electrode including a convex electrode portion and a concave electrode portion, the concave electrode portion being thinner than each of the convex electrode portion and the gate electrode.

Abstract: A method for manufacturing a thin film transistor includes: forming a source electrode and a drain electrode on a substrate by depositing a metal layer on the substrate at a first temperature and etching the metal layer; forming a protective layer on the source and drain electrodes; and performing a heat treatment on the protective layer at a second temperature higher than the first temperature.

Abstract: Disclosed is a flat panel display capable of improving a white balance by making channel regions of transistors of R, G, and B unit pixels with different current mobilities. The flat panel display includes a plurality of pixels, each of the pixels including R, G and B unit pixels to embody red (R), green (G), and blue (B) colors, respectively, and each of the unit pixels including at least one transistor. Channel layers of the transistors of at least two unit pixels among the R, G, and B unit pixels have different current mobilities from one another. The R, G, B unit pixels includes transistors and the transistor of at least one unit pixel among the R, G, and B unit pixels includes the channel layer made of silicon layers of different film qualities.

Abstract: A flat panel display and method for fabricating the same are disclosed. The flat panel display includes a substrate. Signal lines are arranged on the substrate in a matrix shape, and a unit pixel region defined by crossing arrangement of the signal lines, has a pixel driving circuit region and an emission region. A pixel driving TFT positioned in the pixel driving circuit region, includes a semiconductor layer and a gate electrode corresponding to a predetermined portion of the semiconductor layer. The gate electrode is formed on a same layer as the signal lines. A pixel electrode, electrically connected to the pixel driving TFT, is positioned in the emission region.

Abstract: An OLED having an improved adhesion characteristic and a method of fabricating the same are provided. The OLED includes: a substrate having a pixel region and a non-pixel region except the pixel region; and an encapsulation substrate for encapsulating the substrate. The pixel region includes: a thin film transistor including a semiconductor layer, a gate electrode, and source and drain electrodes; a first electrode electrically connected with the thin film transistor; a pixel defining layer disposed on the first electrode; an organic layer having at least an emissive layer formed on the first electrode and the pixel defining layer; a second electrode disposed on the organic layer; and at least one inorganic layer. The non-pixel region includes at least one inorganic layer, and a frit disposed on the inorganic layer to encapsulate the substrate and the encapsulation substrate.

Abstract: A flat panel display apparatus, including a substrate, a display unit disposed on the substrate, a first interconnecting line positioned on the substrate at an outer side of the display unit, a second interconnecting line located above the first interconnecting line, and at least two insulating layers interposed between the first and second interconnecting lines.

Abstract: Disclosed is a flat panel display capable of improving a white balance by making channel regions of transistors of R, G, and B unit pixels with different current mobilities. The flat panel display includes a plurality of pixels, each of the pixels including R, G and B unit pixels to embody red (R), green (G), and blue (B) colors, respectively, and each of the unit pixels including at least one transistor. Channel layers of the transistors of at least two unit pixels among the R, G, and B unit pixels have different current mobilities from one another. The R, G, B unit pixels includes transistors and the transistor of at least one unit pixel among the R, G, and B unit pixels includes the channel layer made of silicon layers of different film qualities.

Abstract: Disclosed is a flat panel display capable of improving a white balance by making channel regions of transistors of R, G and B unit pixels with different current mobilities. The flat panel display includes a plurality of pixels, each of the pixels including R, G and B unit pixels to embody red (R), green (G) and blue (B) colors, respectively, and each of the unit pixels including at least one transistor. Channel layers of the transistors of at least two unit pixels among the R, G and B unit pixels have different current mobilities from one another. The R, G, B unit pixels includes transistors and the transistor of at least one unit pixel among the R, G and B unit pixels includes the channel layer made of silicon layers of different film qualities.

Abstract: A method of fabricating a display device is provided. The method includes providing a substrate having a pixel region and a circuit region located at the periphery of the pixel region. A first semiconductor layer and a second semiconductor layer are formed on the pixel region and on the circuit region, respectively. The first semiconductor layer may be selectively surface treated to increase the density of lattice defects in a surface of the first semiconductor layer.

Abstract: A capacitor that may prevent current leakage, destruction of an insulating layer, and a short circuit at an edge portion of an electrode, and a flat panel display including the same, are provided. The capacitor includes at least two electrodes, disposed in a stacked structure, that are insulated from each other, wherein each electrode is smaller than a lower electrode.

Abstract: A flat panel display and method for fabricating the same are disclosed. The flat panel display includes a substrate. Signal lines are arranged on the substrate in a matrix shape, and a unit pixel region defined by crossing arrangement of the signal lines, has a pixel driving circuit region and an emission region. A pixel driving TFT positioned in the pixel driving circuit region, includes a semiconductor layer and a gate electrode corresponding to a predetermined portion of the semiconductor layer. The gate electrode is formed on a same layer as the signal lines. A pixel electrode, electrically connected to the pixel driving TFT, is positioned in the emission region.

Abstract: A thin film transistor according to the present invention may include a gate insulating layer; and a lower pattern placed below the gate insulating layer to contact therewith and having an edge with a taper angle of at most about 80°. With this design, dielectric strength of the gate insulating layer can be enhanced. The lower pattern can be a gate electrode layer.

Abstract: Disclosed is a flat panel display capable of improving a white balance by making channel regions of transistors of R, G and B unit pixels with different current mobilities. The flat panel display includes a plurality of pixels, each of the pixels including R, G and B unit pixels to embody red (R), green (G) and blue (B) colors, respectively, and each of the unit pixels including at least one transistor. Channel layers of the transistors of at least two unit pixels among the R, G and B unit pixels have different current mobilities from one another. The R, G, B unit pixels includes transistors and the transistor of at least one unit pixel among the R, G and B unit pixels includes the channel layer made of silicon layers of different film qualities.