Abstract: Disclosed are a light emitting device, a conductive substrate; a second electrode layer on the conductive substrate and including a center portion and a peripheral portion surrounding the center portion; a protective layer on the peripheral portion of the second electrode layer; and a light emitting structure including a second conductive semiconductor layer on the second electrode layer, an active layer on the second conductive semiconductor layer and a first conductive semiconductor layer on the active layer; and a first electrode layer on the first conductive semiconductor layer, wherein the second conductive semiconductor layer includes edge portions extending outside of the light emitting structure.

Abstract: Disclosed are a light emitting device, a conductive substrate; a second electrode layer on the conductive substrate and including a center portion and a peripheral portion surrounding the center portion; a protective layer on the peripheral portion of the second electrode layer; and a light emitting structure including a second conductive semiconductor layer on the second electrode layer, an active layer on the second conductive semiconductor layer and a first conductive semiconductor layer on the active layer; and a first electrode layer on the first conductive semiconductor layer, wherein the second conductive semiconductor layer includes edge portions extending outside of the light emitting structure.

Abstract: A light emitting device including a conductive support substrate; an electrode layer on the conductive support substrate, and including side portions such that a center upper portion of the electrode layer protrudes upward from the conductive support substrate; a protective layer on the side portions of the electrode layer, the protective layer including an insulating material having a higher resistance than that of the electrode layer and a top surface of the protective layer is in line with a top surface of the protruding center upper portion of the electrode layer; and a light emitting structure including a second conductive semiconductor layer on the electrode layer and at least a portion of the protective layer, an active layer on the second conductive semiconductor layer and a first conductive semiconductor layer on the active layer.

Abstract: A light unit and a display apparatus having the light unit are provided. The light unit comprises a light emitting module comprising a light emitting diode and a connection terminal; a module connection member comprising a module terminal protruding to be electrically connected to the connection terminal of the light emitting module; and a bottom cover comprising the module connection member and the light emitting module.

Abstract: A light emitting device package according to the embodiment includes a package body; a light emitting device over the package body; a first molding part having a first refractive index over the light emitting device; and a second molding part having a second refractive index lower than the first refractive index over the first molding part. A light emitting device package according to the embodiment includes a package body; a light emitting device over the package body; a resin layer including luminescence materials; a first molding part having a first refractive index over the resin layer; and a second molding part having a second refractive index lower than the first refractive index over the first molding part.

Abstract: Disclosed are a light emitting device package and a light emitting apparatus. The light emitting device package comprises a package body having a cavity, first and second frames passing through the package body and exposed in the cavity, a third frame disposed on a bottom surface of the cavity and electrically insulated from the first and second frames, a light emitting device on the third frame, and a wire electrically connecting the first and second frames with the light emitting device. A top surface of the third frame comprises a first plane having a first height, a second plane having a second height lower than the first height, and an inclined surface connecting the first plane with the second plane. The inclined surface is exposed in the cavity.

Abstract: A light unit and a display apparatus having the light unit are provided. The light unit comprises a light emitting module comprising a light emitting diode and a connection terminal; a module connection member comprising a module terminal protruding to be electrically connected to the connection terminal of the light emitting module; and a bottom cover comprising the module connection member and the light emitting module.

Abstract: Disclosed are a light emitting diode, a method of manufacturing the same, a light emitting device and a method of manufacturing the same. The light emitting device includes a circuit board formed with a first conductive pattern and a second conductive pattern electrically isolated from the first conductive pattern; a light emitting diode electrically connected to the first and second conductive patterns on the circuit board; a first molding member surrounding the light emitting diode; and a second molding member on the first molding member.

Abstract: Provided is a semiconductor light emitting device. The semiconductor light emitting device comprises a first conductive type semiconductor layer, an active layer, a second conductive type super lattice layer, and a second conductive type semiconductor layer. The active layer is formed on the first conductive type semiconductor layer. The second conductive type super lattice layer comprises a second conductive type nitride layer and an undoped nitride layer on the active layer. The second conductive type semiconductor layer is formed on the second conductive type super lattice layer.

Abstract: Provided is a semiconductor light emitting device. The semiconductor light emitting device comprises a first conductive type semiconductor layer, an active layer, a second conductive type super lattice layer, and a second conductive type semiconductor layer. The active layer is formed on the first conductive type semiconductor layer. The second conductive type super lattice layer comprises a second conductive type nitride layer and an undoped nitride layer on the active layer. The second conductive type semiconductor layer is formed on the second conductive type super lattice layer.