Patents by Inventor Deven Matthew Raj MITTAL

Deven Matthew Raj MITTAL has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11469107
    Abstract: Methods and techniques for deposition of amorphous carbon films on a substrate are provided. In one example, the method includes depositing an amorphous carbon film on an underlayer positioned on a susceptor in a first processing region. The method further includes implanting a dopant or the inert species into the amorphous carbon film in a second processing region. The implant species, energy, dose & temperature in some combination may be used to enhance the hardmask hardness. The method further includes patterning the doped amorphous carbon film. The method further includes etching the underlayer.
    Type: Grant
    Filed: July 27, 2020
    Date of Patent: October 11, 2022
    Assignee: Applied Materials, Inc.
    Inventors: Rajesh Prasad, Sarah Bobek, Prashant Kumar Kulshreshtha, Kwangduk Douglas Lee, Harry Whitesell, Hidetaka Oshio, Dong Hyung Lee, Deven Matthew Raj Mittal, Scott Falk, Venkataramana R. Chavva
  • Publication number: 20220262619
    Abstract: Methods of manufacturing memory devices are provided. The methods improve the quality of a selectively deposited silicon-containing dielectric layer. The method comprises selectively depositing a silicon-containing dielectric layer in a recessed region of a film stack. The selectively deposited silicon-containing dielectric layer is then exposed to a high-density plasma and annealed at a temperature greater than 800 ° C. to provide a silicon-containing dielectric film having a wet etch rate of less than 4 ?/min.
    Type: Application
    Filed: February 9, 2022
    Publication date: August 18, 2022
    Applicant: Applied Materials, Inc.
    Inventors: Ning Li, Shuaidl Zhang, Mihaela A. Balseanu, Qi Gao, Rajesh Prasad, Tomohiko Kitajima, Chang Seok Kang, Deven Matthew Raj Mittal, Kyu-Ha Shim
  • Publication number: 20200357640
    Abstract: Methods and techniques for deposition of amorphous carbon films on a substrate are provided. In one example, the method includes depositing an amorphous carbon film on an underlayer positioned on a susceptor in a first processing region. The method further includes implanting a dopant or the inert species into the amorphous carbon film in a second processing region. The implant species, energy, dose & temperature in some combination may be used to enhance the hardmask hardness. The method further includes patterning the doped amorphous carbon film. The method further includes etching the underlayer.
    Type: Application
    Filed: July 27, 2020
    Publication date: November 12, 2020
    Inventors: Rajesh PRASAD, Sarah BOBEK, Prashant Kumar KULSHRESHTHA, Kwangduk Douglas LEE, Harry WHITESELL, Hidetaka OSHIO, Dong Hyung LEE, Deven Matthew RAJ MITTAL, Scott FALK, Venkataramana R. CHAVVA
  • Patent number: 10727059
    Abstract: Implementations described herein generally relate to the fabrication of integrated circuits. More particularly, the implementations described herein provide techniques for deposition of amorphous carbon films on a substrate. In one implementation, a method of forming an amorphous carbon film is provided. The method comprises depositing an amorphous carbon film on an underlayer positioned on a susceptor in a first processing region. The method further comprises implanting a dopant or inert species into the amorphous carbon film in a second processing region. The dopant or inert species is selected from carbon, boron, nitrogen, silicon, phosphorous, argon, helium, neon, krypton, xenon or combinations thereof. The method further comprises patterning the doped amorphous carbon film. The method further comprises etching the underlayer.
    Type: Grant
    Filed: November 13, 2018
    Date of Patent: July 28, 2020
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Sarah Bobek, Prashant Kumar Kulshreshtha, Rajesh Prasad, Kwangduk Douglas Lee, Harry Whitesell, Hidetaka Oshio, Dong Hyung Lee, Deven Matthew Raj Mittal
  • Publication number: 20190172714
    Abstract: Implementations described herein generally relate to the fabrication of integrated circuits. More particularly, the implementations described herein provide techniques for deposition of amorphous carbon films on a substrate. In one implementation, a method of forming an amorphous carbon film is provided. The method comprises depositing an amorphous carbon film on an underlayer positioned on a susceptor in a first processing region. The method further comprises implanting a dopant or inert species into the amorphous carbon film in a second processing region. The dopant or inert species is selected from carbon, boron, nitrogen, silicon, phosphorous, argon, helium, neon, krypton, xenon or combinations thereof. The method further comprises patterning the doped amorphous carbon film. The method further comprises etching the underlayer.
    Type: Application
    Filed: November 13, 2018
    Publication date: June 6, 2019
    Inventors: Sarah BOBEK, Prashant KUMAR KULSHRESHTHA, Rajesh PRASAD, Kwangduk Douglas LEE, Harry WHITESELL, Hidetaka OSHIO, Dong Hyung LEE, Deven Matthew Raj MITTAL