Abstract: Methods are provided for modifying a porous surface of an implantable medical device by subjecting the porous surface to a modified micro-arc oxidation process to improve the ability of the medical device to resist microbial growth, to improve the ability of the medical device to adsorb a bioactive agent or a therapeutic agent, and to improve tissue in-growth and tissue on-growth of the implantable medical device.

Abstract: Methods are provided for modifying a porous surface of an implantable medical device by subjecting the porous surface to a modified micro-arc oxidation process to improve the ability of the medical device to resist microbial growth, to improve the ability of the medical device to adsorb a bioactive agent or a therapeutic agent, and to improve tissue in-growth and tissue on-growth of the implantable medical device.

Abstract: Methods are provided for modifying a porous surface of an implantable medical device by subjecting the porous surface to a modified micro-arc oxidation process to improve the ability of the medical device to resist microbial growth, to improve the ability of the medical device to adsorb a bioactive agent or a therapeutic agent, and to improve tissue in-growth and tissue on-growth of the implantable medical device.

Abstract: Methods are provided for modifying a porous surface of an implantable medical device by subjecting the porous surface to a modified micro-arc oxidation process to improve the ability of the medical device to resist microbial growth, to improve the ability of the medical device to adsorb a bioactive agent or a therapeutic agent, and to improve tissue in-growth and tissue on-growth of the implantable medical device.

Abstract: Methods are provided for modifying a porous surface of an implantable medical device by subjecting the porous surface to a modified micro-arc oxidation process to improve the ability of the medical device to resist microbial growth, to improve the ability of the medical device to adsorb a bioactive agent or a therapeutic agent, and to improve tissue in-growth and tissue on-growth of the implantable medical device.

Abstract: Methods for bonding a porous tantalum structure to a substrate are provided. The method includes placing a compressible or porous interlayer between a porous tantalum structure and a cobalt or cobalt-chromium substrate to form an assembly. The interlayer comprising a metal or metal alloy that has solid state solubility with both the substrate and the porous tantalum structure. Heat and pressure are applied to the assembly to achieve solid state diffusion between the substrate and the interlayer and the between the porous tantalum structure and the interlayer.

Abstract: A method for bonding a porous tantalum structure to a substrate is provided. The method comprises providing a substrate comprising cobalt or a cobalt-chromium alloy; an interlayer consisting essentially of at least one of hafnium, manganese, niobium, palladium, zirconium, titanium, or alloys or combinations thereof; and a porous tantalum structure. Heat and pressure are applied to the substrate, the interlayer, and the porous tantalum structure to achieve solid-state diffusion between the substrate and the interlayer and between the interlayer and the porous tantalum structure.

Abstract: A method for bonding a porous tantalum structure to a substrate is provided. The method comprises providing a substrate comprising cobalt or a cobalt-chromium alloy; an interlayer consisting essentially of at least one of hafnium, manganese, niobium, palladium, zirconium, titanium, or alloys or combinations thereof; and a porous tantalum structure. Heat and pressure are applied to the substrate, the interlayer, and the porous tantalum structure to achieve solid-state diffusion between the substrate and the interlayer and between the interlayer and the porous tantalum structure.

Abstract: A method for bonding a porous tantalum structure to a substrate is provided. The method comprises providing a substrate comprising cobalt or a cobalt-chromium alloy; an interlayer consisting essentially of at least one of hafnium, manganese, niobium, palladium, zirconium, titanium, or alloys or combinations thereof; and a porous tantalum structure. Heat and pressure are applied to the substrate, the interlayer, and the porous tantalum structure to achieve solid-state diffusion between the substrate and the interlayer and between the interlayer and the porous tantalum structure.

Abstract: A method for bonding a porous tantalum structure to a substrate is provided. The method comprises providing a substrate comprising cobalt or a cobalt-chromium alloy; an interlayer consisting essentially of at least one of hafnium, manganese, niobium, palladium, zirconium, titanium, or alloys or combinations thereof; and a porous tantalum structure. Heat and pressure are applied to the substrate, the interlayer, and the porous tantalum structure to achieve solid-state diffusion between the substrate and the interlayer and between the interlayer and the porous tantalum structure.

Abstract: Methods for bonding a porous tantalum structure to a substrate are provided. The method includes placing a compressible or porous interlayer between a porous tantalum structure and a cobalt or cobalt-chromium substrate to form an assembly. The interlayer comprising a metal or metal alloy that has solid state solubility with both the substrate and the porous tantalum structure. Heat and pressure are applied to the assembly to achieve solid state diffusion between the substrate and the interlayer and the between the porous tantalum structure and the interlayer.

Abstract: A method for bonding a porous tantalum structure to a substrate is provided. The method comprises providing a substrate comprising cobalt or a cobalt-chromium alloy; an interlayer consisting essentially of at least one of hafnium, manganese, niobium, palladium, zirconium, titanium, or alloys or combinations thereof; and a porous tantalum structure. Heat and pressure are applied to the substrate, the interlayer, and the porous tantalum structure to achieve solid-state diffusion between the substrate and the interlayer and between the interlayer and the porous tantalum structure.