Abstract: A method of plasma processing that includes maintaining a plasma processing chamber between 10° C. to 200° C., flowing oxygen and nitrogen into the plasma processing chamber, where a ratio of a flow rate of the nitrogen to a flow rate of oxygen is between about 1:5 and about 1:1, and etching a ruthenium/osmium layer by sustaining a plasma in the plasma processing chamber.

Abstract: Embodiments of process flows and methods are provided for forming a resistive switching random access memory (ReRAM). More specifically, process flows and methods are provided for reducing the forming voltage needed to form a conductive path in the ReRAM cells. A wide variety of plasma doping processes are used to introduce a plurality of different dopants into a metal-oxide dielectric film. By utilizing at least two different dopants, the plasma doping processes described herein reduce the forming voltage of the subsequently formed ReRAM cell compared to conventional processes that use only one dopant. In some embodiments, the forming voltage may be further reduced by applying a bias power during the plasma doping process, wherein the bias power is preselected to increase the number of ions introduced into the metal-oxide dielectric film during the plasma doping process.

Abstract: A resistive memory device with an embedded shoulder pulled sidewall spacer and method of forming. The method includes providing a patterned film stack containing a lower electrode layer, a dielectric filament layer on the lower electrode layer, and an upper electrode layer on the dielectric filament layer, depositing a conformal cap layer on the patterned film stack, dry etching the conformal cap layer to form a sidewall spacer on sidewalls of the patterned film stack, where a top of the sidewall spacer is recessed to below a top of the upper electrode layer by the dry etching. The method further includes encapsulating the patterned film stack in an isolation layer, and etching the isolation layer to expose the upper electrode layer without exposing the sidewall spacer.

Abstract: A resistive random access memory (RERAM) apparatus and method for forming the apparatus are provided. Oxygen content control in the RERAM is provided. To provide oxygen content control, a via to an electrode of the RERAM is formed utilizing an oxygen-free plasma etch step. In one embodiment, the dielectric within which the via is formed is silicon nitride (SiN). In exemplary embodiments, the plasma chemistry is a hydrofluorocarbon (CxHyFz)-based plasma chemistry or a fluorocarbon (CxFy)-based plasma chemistry. In one embodiment, the resistive layer of the RERAM is a metal oxide. In another embodiment, the oxygen concentrations in the electrode of the RERAM under the via and outside the via are the same after formation of the via.

Abstract: A method of plasma processing that includes maintaining a plasma processing chamber between 10° C. to 200° C., flowing oxygen and nitrogen into the plasma processing chamber, where a ratio of a flow rate of the nitrogen to a flow rate of oxygen is between about 1:5 and about 1:1, and etching a ruthenium/osmium layer by sustaining a plasma in the plasma processing chamber.

Abstract: A resistive random access memory (RERAM) apparatus and method for forming the apparatus are provided. Oxygen content control in the RERAM is provided. To provide oxygen content control, a via to an electrode of the RERAM is formed utilizing an oxygen-free plasma etch step. In one embodiment, the dielectric within which the via is formed is silicon nitride (SiN). In exemplary embodiments, the plasma chemistry is a hydrofluorocarbon (CxHyFz)-based plasma chemistry or a fluorocarbon (CxFy)-based plasma chemistry. In one embodiment, the resistive layer of the RERAM is a metal oxide. In another embodiment, the oxygen concentrations in the electrode of the RERAM under the via and outside the via are the same after formation of the via.

Abstract: Described herein are photomask blanks and photomasks prepared therefrom, methods for producing the photomask blanks and apparatus used in such methods. In one aspect, there is described methods for preparing photomask blanks having layers with a compositional gradient, i.e., a varying composition through the thickness of the layer. In other aspects, either in conjunction with the above aspects or independently, methods and apparatus are provided which allow more efficient use of a cluster tool for preparing the photomask blanks and performing quality control on them. The inventions find applicability, for example, in preparing binary photomask blanks and phase shift photomask blanks.