Patents by Inventor Devika Choudhury

Devika Choudhury has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Atomic layer deposition of lithium boron comprising nanocomposite solid electrolytes
    Patent number: 11946139
    Abstract: A lithium boron coating and a method of producing the same. Atomic layer deposition deposits lithium and boron to form a lithium borate layer. The lithium borate maybe deposited as a solid electrolyte.
    Type: Grant
    Filed: September 30, 2020
    Date of Patent: April 2, 2024
    Assignee: UCHICAGO ARGONNE, LLC
    Inventors: Anil U. Mane, Devika Choudhury, Jeffrey W. Elam
  • Creating and protecting magnetic nanomaterials
    Patent number: 11851757
    Abstract: Coated nanofibers and methods for forming the same. A magnetic nanofiber is formed and a barrier coating is deposited on the magnetic nanofiber by atomic layer deposition (“ALD”) process. The coated nanofiber may include a reduced magnetic nanostructure and a barrier coating comprising a first oxide coating on the nanofiber, the coating being non-reactive with the magnetic polymer nanofiber, the barrier coating have a thickness of 2 nm to 12 nm.
    Type: Grant
    Filed: January 30, 2020
    Date of Patent: December 26, 2023
    Assignee: UCHICAGO ARGONNE, LLC
    Inventors: Anil U. Mane, Yuepeng Zhang, Devika Choudhury, Jeffrey W. Elam, Kaizhong Gao, John N. Hryn
  • Methods for low-temperature p-CVD and thermal ALD of magnesium diboride
    Patent number: 11773488
    Abstract: ALD and p-CVD methods to generate MgB2 and MgB2-containing films in the growth temperature range of 250-300° C. The thermal ALD and p-CVD methods shown herein ensure that the high-temperature-induced roughening, which causes high surface resistances in MgB2 coatings grown by the mentioned conventional techniques, is avoided. The MgB2 and MgB2-containing films exhibit superconductive properties at above 20° K.
    Type: Grant
    Filed: May 30, 2019
    Date of Patent: October 3, 2023
    Assignee: UChicago Argonne, LLC
    Inventors: David Joseph Mandia, Angel Yanguas-Gil, Devika Choudhury, Aliraeza Nassiri, Anil U. Mane, Jeffrey W. Elam
  • ATOMIC LAYER DEPOSITION OF LITHIUM BORON COMPRISING NANOCOMPOSITE SOLID ELECTROLYTES
    Publication number: 20220098736
    Abstract: A lithium boron coating and a method of producing the same. Atomic layer deposition deposits lithium and boron to form a lithium borate layer. The lithium borate maybe deposited as a solid electrolyte.
    Type: Application
    Filed: September 30, 2020
    Publication date: March 31, 2022
    Applicant: UCHICAGO ARGONNE, LLC
    Inventors: Anil U. Mane, Devika Choudhury, Jeffrey W. Elam
  • Molecular layer etching
    Patent number: 11257682
    Abstract: A method of etching an organic or hybrid inorganic/organic material. The method etches molecular layer deposition coatings. An etching cycle comprises a first half reaction exposing the coating to a precursor. A second half reaction exposes a second precursor, removing or etching a portion of the coating.
    Type: Grant
    Filed: September 30, 2019
    Date of Patent: February 22, 2022
    Assignee: UChicago Argonne, LLC
    Inventors: Matthias John Young, Steven Payonk Letourneau, Devika Choudhury, Jeffrey W. Elam, Angel Yanguas-Gil, Anil U. Mane
  • MODIFICATION OF LITHIUM ION ELECTRODE MATERIALS VIA ATOMIC LAYER DEPOSITION TECHNIQUES
    Publication number: 20210336240
    Abstract: A method for coating of lithium ion electrode materials via atomic layer deposition. The coated materials may be integrated in part as a dopant in the electrode itself via heat treatment forming a doped lithium electrode.
    Type: Application
    Filed: April 22, 2020
    Publication date: October 28, 2021
    Applicant: UCHICAGO ARGONNE, LLC
    Inventors: Anil U. Mane, Jason R. Croy, Jeffrey W. Elam, Arturo Gutierrez, Jihyeon Gim, Devika Choudhury, Eungje Lee, Hakim Iddir
  • Method of producing thin layer of large area transition metal dichalcogenides MoSand others
    Patent number: 11142824
    Abstract: An ultra-thin film transition metal dichalcogenide (“TMD”) supported on a support. The TMD is formed from a metal grown by atomic layer deposition (“ALD”) on a substrate. The metal is sulphurized to produce a TMD ultra-thin layer.
    Type: Grant
    Filed: April 23, 2019
    Date of Patent: October 12, 2021
    Assignee: UChicago Argonne, LLC
    Inventors: Anil U. Mane, Devika Choudhury, Jeffrey W. Elam, Steven Payonk Letourneau
  • CREATING AND PROTECTING MAGNETIC NANOMATERIALS
    Publication number: 20210238769
    Abstract: Coated nanofibers and methods for forming the same. A magnetic nanofiber is formed and a barrier coating is deposited on the magnetic nanofiber by atomic layer deposition (“ALD”) process. The coated nanofiber may include a reduced magnetic nanostructure and a barrier coating comprising a first oxide coating on the nanofiber, the coating being non-reactive with the magnetic polymer nanofiber, the barrier coating have a thickness of 2 nm to 12 nm.
    Type: Application
    Filed: January 30, 2020
    Publication date: August 5, 2021
    Applicant: UCHICAGO ARGONNE, LLC
    Inventors: Anil U. Mane, Yuepeng Zhang, Devika Choudhury, Jeffrey W. Elam, Kaizhong Gao, John N. Hryn
  • MOLECULAR LAYER ETCHING
    Publication number: 20210098262
    Abstract: A method of etching an organic or hybrid inorganic/organic material. The method etches molecular layer deposition coatings. An etching cycle comprises a first half reaction exposing the coating to a precursor. A second half reaction exposes a second precursor, removing or etching a portion of the coating.
    Type: Application
    Filed: September 30, 2019
    Publication date: April 1, 2021
    Applicant: UCHICAGO ARGONNE, LLC
    Inventors: Matthias John Young, Steven Payonk Letourneau, Devika Choudhury, Jeffrey W. Elam, Angel Yanguas-Gil, Anil U. Mane
  • METHODS FOR LOW-TEMPERATURE P-CVD AND THERMAL ALD OF MAGNESIUM DIBORIDE
    Publication number: 20200378003
    Abstract: ALD and p-CVD methods to generate MgB2 and MgB2-containing films in the growth temperature range of 250-300° C. The thermal ALD and p-CVD methods shown herein ensure that the high-temperature-induced roughening, which causes high surface resistances in MgB2 coatings grown by the mentioned conventional techniques, is avoided. The MgB2 and MgB2-containing films exhibit superconductive properties at above 20° K.
    Type: Application
    Filed: May 30, 2019
    Publication date: December 3, 2020
    Applicant: UCHICAGO ARGONNE, LLC
    Inventors: David Joseph Mandia, Angel Yanguas-Gil, Devika Choudhury, Aliraeza Nassiri, Anil U. Mane, Jeffrey W. Elam
  • METHOD OF PRODUCING THIN LAYER OF LARGE AREA TRANSITION METAL DICHALCOGENIDES MOS2 AND OTHERS
    Publication number: 20200340119
    Abstract: An ultra-thin film transition metal dichalcogenide (“TMD”) supported on a support. The TMD is formed from a metal grown by atomic layer deposition (“ALD”) on a substrate. The metal is sulphurized to produce a TMD ultra-thin layer.
    Type: Application
    Filed: April 23, 2019
    Publication date: October 29, 2020
    Applicant: UCHICAGO ARGONNE, LLC
    Inventors: Anil U. Mane, Devika Choudhury, Jeffrey W. Elam, Steven Payonk Letourneau