Abstract: A semiconductor structure includes a source/drain region; a frontside source/drain contact disposed on the source/drain region, a via-to-backside power rail disposed on the frontside source/drain contact and on a portion of the source/drain region, and a backside power rail connected to the via-to-backside power rail.

Abstract: A semiconductor component includes an area of dielectric material extending below an uppermost surface of a substrate. The semiconductor component further includes a trench formed so as to extend from above the uppermost surface of the substrate into the area of dielectric material. The semiconductor component further includes a non-metal liner coating interior surfaces of the trench. The semiconductor component further includes a metal liner coating interior surfaces of the non-metal liner. The semiconductor component further includes a power rail formed in the trench in direct contact with at least one of the metal liner or the non-metal liner such that the power rail extends into the area of dielectric material and above the uppermost surface of the substrate.

Abstract: Embodiments disclosed herein include a semiconductor structure. The semiconductor structure may include a first top transistor comprising a first source/drain (S/D) region and a first bottom transistor with a second S/D region. The first bottom transistor may be stacked directly below the first transistor. The semiconductor structure may also include a backside power delivery network (BSPDN) below the bottom transistor, a back-end-of-line (BEOL) metal level above the top transistor, and a first interlevel via electrically connecting a top of the first S/D region to the BSPDN.

Abstract: According to the embodiment of the present invention, a semiconductor device includes a first source/drain and a second source/drain. A first source/drain contact includes a first portion and a second portion. The first portion of the first source/drain contact is located directly atop the first source/drain. The second portion of the first source/drain contact extends vertically past the first source/drain. The first source/drain is in direct contact with three different sides of a first section of the second portion of the first source/drain contact.

Abstract: Provided is a semiconductor device. The semiconductor device comprises a transistor comprising a plurality of source/drain epitaxies. The semiconductor device further comprises at least one backside power rail under the transistor. The semiconductor device further comprises a backside inter-layer dielectric (ILD) located between the plurality of source/drain epitaxies and the at least one power rail. The semiconductor device further comprises a first backside contact connecting a first source/drain epitaxy to the at least one backside power rail. The semiconductor device further comprises one or more contact placeholders formed under the other source/drain epitaxies.

Abstract: One or more systems, devices and/or methods provided herein relate to a circuit device having a modular or selectively designed interconnect structure with a plurality of conformal features. In the semiconductor realm, such achievements can allow for fabrication of a device with sub 18 nanometer (nm) or lesser pitch between adjacent and/or parallel lines of the interconnect structure. A device can comprise a semiconductor device having an interconnect structure having a first set of parallel lines and a second set of parallel lines, where the lines of the first set can be arranged in a transverse direction to the lines of the second set. The lines of the first set can be disposed orthogonally to the lines of the second set. The first second sets of lines can comprise first and second rounded jogs that are conformal to one another and which connect the first set of lines to the second set of lines.

Abstract: An approach providing a semiconductor structure that provides a self-leveling, flowable, dielectric material for a gap fill material between vertical structures in many emerging non-volatile memory devices that are being formed with vertical structures for increasing memory device density. The semiconductor structure provides a flat dielectric surface between a plurality of contacts in a back end of the line metal layer in both the memory region and in the logic region of the semiconductor structure. The semiconductor structure includes a first portion of the plurality of contacts that each connect to a pillar-based memory device in an array of pillar-based memory devices. The first portion of the contacts that each connect to a pillar-based memory device in the array of memory devices reside in a conventional interlayer dielectric material under the self-leveling dielectric material. The flowable, self-leveling material provides a flat dielectric surface during contact formation.

Abstract: A back-end-of-line (BEOL) component includes a substrate and a first layer of dielectric material arranged on the substrate. The first layer of dielectric material includes openings. The BEOL component further includes a first layer of metal material arranged in the openings. The BEOL component further includes an etch stop layer arranged on top of the first layer of dielectric material. The BEOL component further includes a second layer of metal material in direct contact with the first layer of metal material. The second layer of metal material includes at least one projection extending above the etch stop layer. The BEOL component further includes a second layer of dielectric material arranged on top of the etch stop layer and surrounding the at least one projection.