Abstract: Systems and methods may be provided for generating reduced-height circuit packages such as infrared detector packages. An alignment and dicing system may include an infrared camera that captures images of alignment marks of a wafer assembly through a lid wafer of the wafer assembly, a light source that illuminates the alignment marks through the lid wafer, and dicing equipment that dices the wafer assembly based on infrared images captured using the infrared camera. The light source may illuminate the alignment marks through the lid wafer by providing light such as infrared light to the wafer assembly through optics of the infrared camera. The infrared camera may capture images of alignment marks formed on a detector wafer of the wafer assembly or on an interior or lower surface of the lid wafer through the lid wafer. The dicing equipment may be aligned with the wafer assembly based on the captured images.

Abstract: Systems and methods may be provided for generating reduced-height circuit packages such as infrared detector packages. An alignment and dicing system may include an infrared camera that captures images of alignment marks of a wafer assembly through a lid wafer of the wafer assembly, a light source that illuminates the alignment marks through the lid wafer, and dicing equipment that dices the wafer assembly based on infrared images captured using the infrared camera. The light source may illuminate the alignment marks through the lid wafer by providing light such as infrared light to the wafer assembly through optics of the infrared camera. The infrared camera may capture images of alignment marks formed on a detector wafer of the wafer assembly or on an interior or lower surface of the lid wafer through the lid wafer. The dicing equipment may be aligned with the wafer assembly based on the captured images.

Abstract: A process for production of self-assembled quantum dots is described which does not entail any processing steps before or after growth of the quantum dots. The process uses in situ formation of three dimensional islands which occurs during epitaxy of material with a different lattice parameter than the substrate. Further deposition of the substrate material then produces single or multiple buried two dimensional layers of randomly distributed or selectively positioned and substantially uniform sized quantum dots. These layers are free of defects and interface states. The lateral dot diameters vary between 140 to 300 Angstroms by appropriate choice of deposition parameters.