Patents by Inventor Devlin M. Gualtieri

Devlin M. Gualtieri has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5245689
    Abstract: Magneto-optically active waveguides suitable for use in high temperature environments are constructed of a magneto-optically active waveguiding body composed of a first crystalline aluminum garnet, which is clad with an epitaxially deposited layer of a second crystalline aluminum garnet. The second crystalline aluminum garnet has a lower refractive index than the first crystalline aluminum garnet.
    Type: Grant
    Filed: March 2, 1992
    Date of Patent: September 14, 1993
    Assignee: Allied-Signal Inc.
    Inventor: Devlin M. Gualtieri
  • Patent number: 5175787
    Abstract: This invention provides birefringent optical waveguide structures of crystalline aluminum garnet of a high refractive index which are clad with crystalline aluminum garnet of a lower refractive index. Due to predetermined lattice mismatch between garnet substrate and cladding layer, strain is induced which causes a stress with resultant birefringence in the waveguide layer. When linearly polarized light enters such stressed waveguide in certain orientations, the linear polarization will be preserved by the stress-induced birefringence. These birefringent clad waveguides can be in the form of slabs, channels, ribs, or any of the typical optical waveguide structures. They are useful at high temperature.
    Type: Grant
    Filed: November 25, 1991
    Date of Patent: December 29, 1992
    Assignee: Allied-Signal Inc.
    Inventors: Devlin M. Gualtieri, Janpu Hou, Robert C. Morris, Herman van de Vaart
  • Patent number: 5113472
    Abstract: Optical waveguides suitable for use in high temperature environments are constructed of a waveguiding body composed of a first crystalline aluminum garnet, which is clad with an epitaxially deposited layer of a second crystalline aluminum garnet. The second crystalline aluminum garnet has a lower refractive index than the first crystalline aluminum garnet.
    Type: Grant
    Filed: May 28, 1991
    Date of Patent: May 12, 1992
    Assignee: Allied-Signal Inc.
    Inventors: Devlin M. Gualtieri, Robert C. Morris
  • Patent number: 5048343
    Abstract: A temperature compensated strain gauge amplifier derives compensating signals for offset and gauge errors of bridge transducers from a single temperature sensing element. The amplifier is inexpensive to construct, provides a high degree of voltage linearity with respect to temperature and is reliable in operation.
    Type: Grant
    Filed: April 30, 1990
    Date of Patent: September 17, 1991
    Assignee: Allied-Signal Inc.
    Inventors: Mohammadreza Oboodi, Devlin M. Gualtieri
  • Patent number: 4931133
    Abstract: A method of growing optical quality .beta.-BaB.sub.2 O.sub.4 crystals involves growing these crystals from a fluxed melt of BaB.sub.2 O.sub.4, Na.sub.2 O and NaCl, in certain proportions.
    Type: Grant
    Filed: December 21, 1988
    Date of Patent: June 5, 1990
    Assignee: Allied-Signal Inc.
    Inventors: Devlin M. Gualtieri, Bruce H. T. Chai
  • Patent number: 4912407
    Abstract: An inductance coil serves as a displacement sensor arranged in connection with a tuned circuit of an oscillator. Liquid level displacement in an LEC crystal growth environment is sensed as a frequency change in the oscillator circuit as compared to a set point value. The sensor is protected from the environment by an outer protective sheath of non-conductive, non-contaminating material such as boron nitride.
    Type: Grant
    Filed: November 23, 1988
    Date of Patent: March 27, 1990
    Assignee: Allied-Signal Inc.
    Inventors: Devlin M. Gualtieri, Edward Porbansky, Mandayam C. Narasimban
  • Patent number: 4728178
    Abstract: A magneto-optical element comprises a magnetic garnet layer on a crystalline substrate. The garnet layer has a faceted structure, which provides high Faraday rotation and controlled coercivity. The faceted structure is preferably formed by depositing the layer onto a substrate whose lattice constant is sufficiently smaller than that of the layer. The resulting elements find application in light modulators, such as switches and displays, where they permit high resolution without having to be cut into an array of small cells.
    Type: Grant
    Filed: February 20, 1986
    Date of Patent: March 1, 1988
    Assignee: Allied Corporation
    Inventors: Devlin M. Gualtieri, Paul F. Tumelty
  • Patent number: 4713577
    Abstract: A multi-layer luminescent screen includes a luminescent crystalline sublayer and a faceted overlayer. The faceted overlayer causes the emission from the screen of a greater fraction of the luminescence than would otherwise be the case. The screens, which are typically cathodoluminescent, find application in computer displays, lithography, and flying spot scanners.
    Type: Grant
    Filed: December 20, 1985
    Date of Patent: December 15, 1987
    Assignee: Allied Corporation
    Inventors: Devlin M. Gualtieri, Shui T. Lai
  • Patent number: 4520460
    Abstract: Certain Tm-containing iron garnet compositions provide layers having desirably high values of Curie temperature and magnetic anisotropy and permit the fabrication of devices having 1.2 .mu.m diameter magnetic bubbles. The compositions, based on Tm-substitution on dodecahedral sites of [(La,Bi)(Sm,Eu),(Ca,Sr),R].sub.3 (Fe,Si,Ge).sub.5 O.sub.12, are grown by liquid phase epitaxy onto suitable substrates. Bubble devices that incorporate the layers find applications in high density information storage.
    Type: Grant
    Filed: August 15, 1983
    Date of Patent: May 28, 1985
    Assignee: Allied Corporation
    Inventors: Devlin M. Gualtieri, Paul F. Tumelty
  • Patent number: 4433034
    Abstract: Certain Tm-containing iron garnet compositions provide layers having desirably low values of temperature coefficient of bubble collapse field and permit the fabrication of 1.2 .mu.m diameter magnetic bubble devices. The compositions, based on Tm-substitution on dodecahedral sites of [(La,Bi),(Sm,Eu),R].sub.3 (Fe,Al,Ga).sub.5 O.sub.12, are grown by liquid phase epitaxy onto suitable substrates. Bubble devices that incorporate the layers find applications in high density information storage.
    Type: Grant
    Filed: April 12, 1982
    Date of Patent: February 21, 1984
    Assignee: Allied Corporation
    Inventors: Devlin M. Gualtieri, Paul F. Tumelty, Mathias A. Gilleo, deceased