Abstract: A functional layer for a moisture electric generating battery cell wherein the functional layer includes graphene oxide having a ratio of C?O bonds to C—C bonds of more than 1:9. The functional layer include treated graphene oxide having an interlayer spacing that is greater than the interlayer spacing of graphene oxide from which the treated graphene oxide is prepared. The functional layer consists of graphene oxide and a polymer binder that is selected to bond with an electrically conductive substrate. The polymer binder may be one or more of: PVA, PVB, PMMA or PVP. The graphene oxide and polymer binder are treated with acid such as HCl, H2SO4 or HNO3. The electrically conductive substrate forming an electrode may be mounted onto a further substrate, for use as a moist-electric generation (MEG) in an electronic device. The electronic device is configured to have a surface positioned in contact with the skin of a subject when in use.

Abstract: Methods for the manufacture of stable strontium titanate nanocube sols are disclosed. The sols are useful in the manufacture of switchable layers suitable for RRAM applications and the switching performance is stable and reproducible. The RRAM layers comprise a mixture of strontium titanate nanocubes and surfactant.

Abstract: A memory structure for use in a memory device comprising at least one first layer and at least one second layer: the at least one first layer comprises a plurality of a first element, and the at least one second layer comprises a plurality of a second element; and, wherein the memory structure has an electrical resistive state that can be changed in response to an electromotive force being applied thereto.

Abstract: Non-volatile Resistive RAM devices are described prepared using various nanocube dispersions and dispersion based deposition techniques including ink jet printing. Stretchable Resistive RAM devices are described that retain their switching properties after repeated stretch and relaxation cycles and show highly stable ON/OFF ratios after each cycle in the stretched and relaxed state.

Abstract: A method of forming oxide quantum dots is disclosed. The method may provide for the highly controlled formation of the oxide quantum dots. A composition comprising oxide quantum dots is also disclosed. The oxide quantum dots may be considered to be highly crystalline, allowing the oxide quantum dots and composition to be utilised at ambient conditions without requiring subsequent high temperature calcination. The transparent and conductive oxide quantum dots may find particular application in the large scale coating of a variety of substrates, including silicon, glass, polymers, or composites, etc., and may be used in windscreens, or windows of vehicles (such as automobiles, trains, aeroplanes, etc.) and/or buildings, etc., which require conductive capabilities, such as for the purposes of de-fogging or de-icing.

Abstract: A memory structure for use in a memory device comprising at least one first layer and at least one second layer: the at least one first layer comprises a plurality of a first element, and the at least one second layer comprises a plurality of a second element; and, wherein the memory structure has an electrical resistive state that can be changed in response to an electromotive force being applied thereto.