Abstract: Spin torque magnetic memory elements that have a pinned layer, two free layers, and a current-blocking insulating layer proximate to at least one of the free layers. The resistive state (e.g., low resistance or high resistance) of the memory elements is altered by passing electric current through the element in one direction. In other words, to change from a low resistance to a high resistance, the direction of electric current is the same as to change from a high resistance to a low resistance. The elements have a unidirectional write scheme.

Abstract: A method and apparatus for stray magnetic field compensation in a non-volatile memory cell, such as a spin-torque transfer random access memory (STRAM). In some embodiments, a first tunneling barrier is coupled to a reference structure that has a perpendicular anisotropy and a first magnetization direction. A recording structure that has a perpendicular anisotropy is coupled to the first tunneling barrier and a nonmagnetic spacer layer. A compensation layer that has a perpendicular anisotropy and a second magnetization direction in substantial opposition to the first magnetization direction is coupled to the nonmagnetic spacer layer. Further, the memory cell is programmable to a selected resistance state with application of a current to the recording structure.

Abstract: An apparatus that includes a magnetic structure including a reference layer; and a free layer; an exchange coupling spacer layer; and a stabilizing layer, wherein the exchange coupling spacer layer is between the magnetic structure and the stabilizing layer and exchange couples the free layer of the magnetic structure to the stabilizing layer.

Abstract: Spin-transfer torque memory includes a composite free magnetic element, a reference magnetic element having a magnetization orientation that is pinned in a reference direction, and an electrically insulating and non-magnetic tunneling barrier layer separating the composite free magnetic element from the magnetic reference element. The free magnetic element includes a hard magnetic layer exchanged coupled to a soft magnetic layer. The composite free magnetic element has a magnetization orientation that can change direction due to spin-torque transfer when a write current passes through the spin-transfer torque memory unit.

Abstract: Magnetic spin-torque memory cells, often referred to as magnetic tunnel junction cells, which have magnetic anisotropies (i.e., magnetization orientation at zero field and zero current) of the associated ferromagnetic layers aligned perpendicular to the wafer plane, or “out-of-plane”. A memory cell may have a ferromagnetic free layer, a first pinned reference layer and a second pinned reference layer, each having a magnetic anisotropy perpendicular to the substrate. The free layer has a magnetization orientation perpendicular to the substrate that is switchable by spin torque from a first orientation to an opposite second orientation.

Abstract: A magnetic memory unit includes a tunneling barrier separating a free magnetic element and a reference magnetic element. A first phonon glass electron crystal layer is disposed on a side opposing the tunneling barrier of either the free magnetic element or the reference magnetic element. A second phonon glass electron crystal layer also be disposed on a side opposing the tunneling barrier of either the free magnetic element or the reference magnetic element to provide a Peltier effect on the free magnetic element and the reference magnetic element.

Abstract: Spin-transfer torque memory having a specular insulative spacer is disclosed. The spin-transfer torque memory unit includes a free magnetic layer, a reference magnetic layer, an electrically insulating and non-magnetic tunneling barrier layer separating the free magnetic layer from the reference magnetic layer, an electrode layer, and an electrically insulating and electronically reflective layer separating the electrode layer and the free magnetic layer.

Abstract: Spin-transfer torque memory having a compensation element is disclosed. The spin-transfer torque memory unit includes a synthetic antiferromagnetic reference element, a synthetic antiferromagnetic compensation element, a free magnetic layer between the synthetic antiferromagnetic reference element and the synthetic antiferromagnetic compensation element, and an electrically insulating and non-magnetic tunneling barrier layer separating the free magnetic layer from the synthetic antiferromagnetic reference element. The free magnetic layer has a saturation moment value greater than 1100 emu/cc.

Abstract: Devices are proposed for use in nanoscale data transfer and exchange between electronic components. Spin wave generators translate an input signal charge-carrier based signal to spin waves within a ferromagnetic stripe. The spin waves propagate along the ferromagnetic stripe and are detected by spin wave detectors. Further, signal transfer devices such as a splitter, mixer, and switch are disclosed. Embodiments of the invention provide a solution for replacing copper connections, which is a limiting factor in current and future development of high-performance chips.

Abstract: A method for steering pull compensation to maintain a steering load below a predetermined threshold value. A straight line driving condition is verified through vehicle sensors and/or GPS, drive torque control is performed such that the steering load is kept below the predetermined threshold value. The steering pull compensation method may be disabled by a vehicle operator and is disabled in the absence of a verified straight line driving condition.

Abstract: Variable write and read methods for resistance random access memory (RRAM) are disclosed. The methods include initializing a write sequence and verifying the resistance state of the RRAM cell. If a write pulse is needed, then two or more write pulses are applied through the RRAM cell to write the desired data state to the RRAM cell. Each subsequent write pulse has substantially the same or greater write pulse duration. Subsequent write pulses are applied to the RRAM cell until the RRAM cell is in the desired data state or until a predetermined number of write pulses have been applied to the RRAM cell. A read method is also disclosed where subsequent read pulses are applied through the RRAM cell until the read is successful or until a predetermined number of read pulses have been applied to the RRAM cell.

Abstract: A ferromagnetic thin-film based magnetic field sensor having an electrically insulative intermediate layer with two major surfaces on opposite sides thereof with an initial film of an anisotropic ferromagnetic material on one of those intermediate layer major surfaces and thin-film platelets on the remaining one of the intermediate layer major surfaces.

Abstract: A programmable metallization memory cell that has an apertured insulating layer comprising at least one aperture therethrough positioned between the active electrode and the inert electrode. Superionic clusters are present within the at least one aperture, and may extend past the at least one aperture. Also, methods for making a programmable metallization memory cell are disclosed.

Abstract: In order to increase an efficiency of spin transfer and thereby reduce the required switching current, a current perpendicular to plane (CPP) magnetic element for a memory device includes either one or both of a free magnetic layer, which has an electronically reflective surface, and a permanent magnet layer, which has perpendicular anisotropy to bias the free magnetic layer.

Abstract: A tire cornering power estimation and monitoring system, comprising a steering torque sensor, a steering wheel angle sensor, a yaw rate sensor, a lateral acceleration sensor, a speed sensor, and at least one controller configured to receive signals from the sensors and send a notification if the signals indicate that one or more of the vehicle's tires need to be checked or serviced. The system also comprises a notification system configured to indicate that one or more of the vehicle's tires need to be checked or serviced.

Abstract: Spin torque magnetic memory elements that have a pinned layer, two free layers, and a current-blocking insulating layer proximate to at least one of the free layers. The resistive state (e.g., low resistance or high resistance) of the memory elements is altered by passing electric current through the element in one direction. In other words, to change from a low resistance to a high resistance, the direction of electric current is the same as to change from a high resistance to a low resistance. The elements have a unidirectional write scheme.

Abstract: A spin oscillator device generates a microwave output in response to an applied DC current. The device includes a spin momentum transfer (SMT) stack including a top electrode, a free layer, a nonmagnetic layer, a pinned magnetic structure, and a bottom electrode. A local magnetic field source adjacent the SMT stack applies a local magnetic field to the free layer to cause the magnetization direction of the free layer to be oriented at a tilt angle with respect to plane of the free layer. The local magnetic field source can include coils or an electromagnet structure, or permanent magnets in close proximity to the SMT stack.

Abstract: A method and apparatus for humidifying air in which the first side of a permselective water transport membrane is contacted with water vapor laden flue gas from a combustion process having a first water vapor partial pressure and a first temperature and at least a portion of the water vapor is condensed, producing condensed water. The condensed water is transported through the membrane to the opposite side of the membrane, which is contacted with an air stream having a second water vapor partial pressure, which second water vapor partial pressure is less than the first water vapor partial pressure, and having a second temperature, which second temperature is less than the first temperature. Upon contact with the air stream, the condensed water evaporates into the air stream, resulting in a humidified air stream.

Abstract: A combustion system having at least one wall enclosing a combustion chamber and forming a plurality of burner or burner nozzle openings. Disposed within each of the openings is a premix burner or burner nozzle, each of which has a premixed fuel/oxidant outlet proximate the combustion chamber and a fuel/oxidant inlet distal from the combustion chamber. At least a portion of the premix burners or burner nozzles are sized to produce different fuel/oxidant delivery disturbance response times in response to a pressure disturbance within the combustion system. Differences in fuel/oxidant delivery response times are achieved by using burners or burner nozzles having different internal dimensions, different volume flow rates, and, optionally, by varying the fuel/oxidant ratios of the mixtures flowing through the burners or burner nozzles.

Abstract: A wireless communication system comprises a first communication module including a transmitter configured to generate a modulated magnetic field and a second communication module including a receiver. The receiver of the second communication module includes a solid magnetic field sensor configured to sense the magnetic field. Information is transferred from the first communication module to the second communication module via the magnetic field.