Patents by Inventor Dexter Tan

Dexter Tan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for fabricating nano devices
    Patent number: 8338280
    Abstract: Embodiments relate to a method for fabricating nano-wires in nano-devices, and more particularly to nano-device fabrication using end-of-range (EOR) defects. In one embodiment, a substrate with a surface crystalline layer over the substrate is provided and EOR defects are created in the surface crystalline layer. One or more fins with EOR defects embedded within is formed and oxidized to form one or more fully oxidized nano-wires with nano-crystals within the core of the nano-wire.
    Type: Grant
    Filed: July 8, 2010
    Date of Patent: December 25, 2012
    Assignees: GLOBALFOUNDRIES Singapore Pte. Ltd., Nanyang Technological University
    Inventors: Dexter Tan, Kin Leong Pey, Sai Hooi Yeong, Yoke King Chin, Kuang Kian Ong, Chee Mang Ng
  • Localized anneal
    Patent number: 8268733
    Abstract: A method of forming a device is presented. The method includes providing a wafer having an active surface and dividing the wafer into a plurality of portions. The wafer is selectively processed by localized heating of a first of the plurality of portions. The wafer is then repeatedly selectively processed by localized heating of a next of the plurality of portions until all plurality of portions have been selectively processed.
    Type: Grant
    Filed: August 7, 2009
    Date of Patent: September 18, 2012
    Assignees: Nanyang Technological University, National University of Singapore, Globalfoundries Singapore Pte. Ltd.
    Inventors: Dexter Tan, Chee Chong Lim, Sai Hooi Yeong, Chee Mang Ng
  • METHOD FOR FABRICATING NANO DEVICES
    Publication number: 20120009749
    Abstract: Embodiments relate to a method for fabricating nano-wires in nano-devices, and more particularly to nano-device fabrication using end-of-range (EOR) defects. In one embodiment, a substrate with a surface crystalline layer over the substrate is provided and EOR defects are created in the surface crystalline layer. One or more fins with EOR defects embedded within is formed and oxidized to form one or more fully oxidized nano-wires with nano-crystals within the core of the nano-wire.
    Type: Application
    Filed: July 8, 2010
    Publication date: January 12, 2012
    Applicants: NANYANG TECHNOLOGICAL UNIVERSITY, GLOBALFOUNDRIES SINGAPORE PTE. LTD.
    Inventors: Dexter TAN, Kin Leong PEY, Sai Hooi YEONG, Yoke King CHIN, Kuang Kian ONG, Chee Mang NG
  • LOCALIZED ANNEAL
    Publication number: 20110034040
    Abstract: A method of forming a device is presented. The method includes providing a wafer having an active surface and dividing the wafer into a plurality of portions. The wafer is selectively processed by localized heating of a first of the plurality of portions. The wafer is then repeatedly selectively processed by localized heating of a next of the plurality of portions until all plurality of portions have been selectively processed.
    Type: Application
    Filed: August 7, 2009
    Publication date: February 10, 2011
    Applicants: CHARTERED SEMICONDUCTOR MANUFACTURING, LTD., NANYANG TECHNOLOGICAL UNIVERSITY
    Inventors: Dexter TAN, Chee Chong LIM, Sai Hooi YEONG, Chee Mang NG