Patents by Inventor Deying Xia

Deying Xia has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11378532
    Abstract: An inspection system serves to qualify semiconductor structures. The inspection system has an ion beam source for space-resolved exposition of the structures to be qualified with an ion beam. The inspection system also includes a secondary ion detection device with a mass spectrometer. The mass spectrometer is configured to measure an ion mass to charge ratio in a given bandwidth.
    Type: Grant
    Filed: December 21, 2020
    Date of Patent: July 5, 2022
    Assignees: Carl Zeiss SMT GmbH, Carl Zeiss Microscopy, LLC
    Inventors: Brett Lewis, Wilhelm Kuehn, Deying Xia, Shawn McVey, Ulrich Mantz
  • Publication number: 20210109046
    Abstract: An inspection system serves to qualify semiconductor structures. The inspection system has an ion beam source for space-resolved exposition of the structures to be qualified with an ion beam. The inspection system also includes a secondary ion detection device with a mass spectrometer. The mass spectrometer is configured to measure an ion mass to charge ratio in a given bandwidth.
    Type: Application
    Filed: December 21, 2020
    Publication date: April 15, 2021
    Inventors: Brett Lewis, Wilhelm Kuehn, Deying Xia, Shawn McVey, Ulrich Mantz
  • Patent number: 9156004
    Abstract: In accordance with the invention, there is a method of forming a nanochannel including depositing a photosensitive film stack over a substrate and forming a pattern on the film stack using interferometric lithography. The method can further include depositing a plurality of silica nanoparticles to form a structure over the pattern and removing the pattern while retaining the structure formed by the plurality of silica nanoparticles, wherein the structure comprises an enclosed nanochannel.
    Type: Grant
    Filed: March 14, 2013
    Date of Patent: October 13, 2015
    Assignee: STC.UNM
    Inventors: Steven R. J. Brueck, Deying Xia, Yuliya Kuznetsova, Alexander Neumann
  • Publication number: 20130193065
    Abstract: In accordance with the invention, there is a method of forming a nanochannel including depositing a photosensitive film stack over a substrate and forming a pattern on the film stack using interferometric lithography. The method can further include depositing a plurality of silica nanoparticles to form a structure over the pattern and removing the pattern while retaining the structure formed by the plurality of silica nanoparticles, wherein the structure comprises an enclosed nanochannel.
    Type: Application
    Filed: March 14, 2013
    Publication date: August 1, 2013
    Applicant: STC.UNM
    Inventors: Steven R.J. Brueck, Deying Xia, Yuliya Kuznetsova, Alexander Neumann
  • Patent number: 8404123
    Abstract: In accordance with the invention, there is a method of forming a nanochannel including depositing a photosensitive film stack over a substrate and forming a pattern on the film stack using interferometric lithography. The method can further include depositing a plurality of silica nanoparticles to form a structure over the pattern and removing the pattern while retaining the structure formed by the plurality of silica nanoparticles, wherein the structure comprises an enclosed nanochannel.
    Type: Grant
    Filed: September 28, 2010
    Date of Patent: March 26, 2013
    Assignee: STC.UNM
    Inventors: Steven R. J. Brueck, Deying Xia
  • Patent number: 8377390
    Abstract: In accordance with the invention, there are surfaces exhibiting anisotropic wetting, microfluidic devices and microreactors including the surfaces and methods of controlling anisotropic wetting behavior of the surfaces. The exemplary surface can include a substrate and a plurality of rectangular shaped structures arranged to form a macroscopic pattern over the substrate, wherein the plurality of rectangular shaped structures delineate a top surface of the rectangular structures from a surface of the substrate, the rectangular shaped structures including substantially vertical walls having a height of about 100 nm to about 10 ?m and wherein the shape of the macroscopic pattern, the height of the substantially vertical walls, and a surface chemistry of the top surface controls anisotropic wetting at the top surface of the rectangular structures.
    Type: Grant
    Filed: May 29, 2009
    Date of Patent: February 19, 2013
    Assignee: STC.UNM
    Inventors: Steven R. J. Brueck, Deying Xia
  • Publication number: 20110011794
    Abstract: In accordance with the invention, there is a method of forming a nanochannel including depositing a photosensitive film stack over a substrate and forming a pattern on the film stack using interferometric lithography. The method can further include depositing a plurality of silica nanoparticles to form a structure over the pattern and removing the pattern while retaining the structure formed by the plurality of silica nanoparticles, wherein the structure comprises an enclosed nanochannel.
    Type: Application
    Filed: September 28, 2010
    Publication date: January 20, 2011
    Inventors: Steven R. J. Brueck, Deying Xia
  • Patent number: 7825037
    Abstract: In accordance with the invention, there is a method of forming a nanochannel including depositing a photosensitive film stack over a substrate and forming a pattern on the film stack using interferometric lithography. The method can further include depositing a plurality of silica nanoparticles to form a structure over the pattern and removing the pattern while retaining the structure formed by the plurality of silica nanoparticles, wherein the structure comprises an enclosed nanochannel.
    Type: Grant
    Filed: October 16, 2006
    Date of Patent: November 2, 2010
    Assignee: STC.UNM
    Inventors: Steven R. J. Brueck, Deying Xia
  • Publication number: 20070134939
    Abstract: In accordance with the invention, there is a method of forming a nanochannel including depositing a photosensitive film stack over a substrate and forming a pattern on the film stack using interferometric lithography. The method can further include depositing a plurality of silica nanoparticles to form a structure over the pattern and removing the pattern while retaining the structure formed by the plurality of silica nanoparticles, wherein the structure comprises an enclosed nanochannel.
    Type: Application
    Filed: October 16, 2006
    Publication date: June 14, 2007
    Inventors: Steven Brueck, Deying Xia