Patents by Inventor Dharanipal Doppalapudi

Dharanipal Doppalapudi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Micromechanical piezoelectric device
    Patent number: 6953977
    Abstract: A micromechanical device includes a single crystal micromachined micromechanical structure. At least a portion of the micromechanical structure is capable of performing a mechanical motion. A piezoelectric epitaxial layer covers at least a part of said portion of the micromechanical structure that is capable of performing a mechanical motion. The micromechanical structure and piezoelectric epitaxial layer are composed of different materials. At least one electrically conducting layer is formed to cover at least part of the piezoelectric epitaxial layer.
    Type: Grant
    Filed: October 29, 2002
    Date of Patent: October 11, 2005
    Assignee: Boston MicroSystems, Inc.
    Inventors: Richard Mlcak, Dharanipal Doppalapudi, Harry L. Tuller
  • Micromechanical device with an epitaxial layer
    Patent number: 6627965
    Abstract: A micromechanical device includes a single crystal micromechanical structure where at least a portion of the micromechanical structure is capable of performing a mechanical motion. An epitaxial layer covers at least a portion of the micromechanical structure. In one embodiment, the micromechanical structure and the epitaxial layer are formed of different materials.
    Type: Grant
    Filed: February 8, 2000
    Date of Patent: September 30, 2003
    Assignee: Boston MicroSystems, Inc.
    Inventors: Harry L. Tuller, Richard Mlcak, Dharanipal Doppalapudi
  • Micromechanical piezoelectric device
    Publication number: 20030119220
    Abstract: A micromechanical device includes a single crystal micromachined micromechanical structure. At least a portion of the micromechanical structure is capable of performing a mechanical motion. A piezoelectric epitaxial layer covers at least a part of said portion of the micromechanical structure that is capable of performing a mechanical motion. The micromechanical structure and piezoelectric epitaxial layer are composed of different materials. At least one electrically conducting layer is formed to cover at least part of the piezoelectric epitaxial layer.
    Type: Application
    Filed: October 29, 2002
    Publication date: June 26, 2003
    Applicant: Boston MicroSystems, Inc.
    Inventors: Richard Mlcak, Dharanipal Doppalapudi, Harry L. Tuller
  • Semiconductor piezoresistor
    Patent number: 6441716
    Abstract: A piezoresistor having a base substrate with a quantum well structure formed on the base substrate. The quantum well structure includes at least one quantum well layer bounded by barrier layers. The barrier layers are formed from a material having a larger bandgap than the at least one quantum well layer.
    Type: Grant
    Filed: June 12, 2001
    Date of Patent: August 27, 2002
    Assignee: Boston MicroSystems, Inc.
    Inventors: Dharanipal Doppalapudi, Theodore D. Moustakas, Richard Mlcak, Harry L. Tuller
  • Semiconductor piezoresistor
    Publication number: 20020070841
    Abstract: A piezoresistor having a base substrate with a quantum well structure formed on the base substrate. The quantum well structure includes at least one quantum well layer bounded by barrier layers. The barrier layers are formed from a material having a larger bandgap than the at least one quantum well layer.
    Type: Application
    Filed: June 12, 2001
    Publication date: June 13, 2002
    Applicant: Boston MicroSystems, Inc.
    Inventors: Dharanipal Doppalapudi, Theodore D. Moustakas, Richard Mlcak, Harry L. Tuller
  • Semiconductor piezoresistor
    Patent number: 6275137
    Abstract: A piezoresistor having a base substrate with a quantum well structure formed on the base substrate. The quantum well structure includes at least one quantum well layer bounded by barrier layers. The barrier layers are formed from a material having a larger bandgap than the at least one quantum well layer.
    Type: Grant
    Filed: February 8, 2000
    Date of Patent: August 14, 2001
    Assignee: Boston MicroSystems, Inc.
    Inventors: Dharanipal Doppalapudi, Theodore D. Moustakas, Richard Mlcak, Harry L. Tuller